| Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases BS Lee, JR Abelson, SG Bishop, DH Kang, B Cheong, KB Kim Journal of Applied Physics 97 (9), 2005 | 793 | 2005 |
| Full integration of highly manufacturable 512Mb PRAM based on 90nm technology JH Oh, JH Park, YS Lim, HS Lim, YT Oh, JS Kim, JM Shin, YJ Song, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 316 | 2006 |
| One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F= 0.15 μm) DH Kang, DH Ahn, KB Kim, JF Webb, KW Yi Journal of applied physics 94 (5), 3536-3542, 2003 | 189 | 2003 |
| Two-bit cell operation in diode-switch phase change memory cells with 90nm technology DH Kang, JH Lee, JH Kong, D Ha, J Yu, CY Um, JH Park, F Yeung, ... 2008 Symposium on VLSI Technology, 98-99, 2008 | 130 | 2008 |
| Indium selenide (In2Se3) thin film for phase-change memory H Lee, DH Kang, L Tran Materials Science and Engineering: B 119 (2), 196-201, 2005 | 109 | 2005 |
| Phase change material and non-volatile memory device using the same DH Anh, TY Lee, KB Kim, BK Cheong, DH Kang, JH Jeong, IH Kim, ... US Patent 7,233,054, 2007 | 95 | 2007 |
| Switching behavior of indium selenide-based phase-change memory cell H Lee, YK Kim, D Kim, DH Kang IEEE transactions on magnetics 41 (2), 1034-1036, 2005 | 86 | 2005 |
| Characterization of atomic layer deposited WN x C y thin film as a diffusion barrier for copper metallization SH Kim, SS Oh, HM Kim, DH Kang, KB Kim, WM Li, S Haukka, ... Journal of The Electrochemical Society 151 (4), C272, 2004 | 77 | 2004 |
| Phase change memory devices and read methods using elapsed time-based read voltages YN Hwang, DH Kang, CY Um US Patent 7,969,798, 2011 | 72 | 2011 |
| IEDM Tech. Dig. CW Oh, JH Park, YS Lim, HS Lim, YT Oh, JS Kim, JM Shin, YJ Song, ... IEDM Tech. Dig 2, 2006 | 71 | 2006 |
| Thermal atomic layer deposition (ALD) of Ru films for Cu direct plating SH Choi, T Cheon, SH Kim, DH Kang, GS Park, S Kim Journal of The Electrochemical Society 158 (6), D351, 2011 | 69 | 2011 |
| Atomic-layer-deposited thin films as diffusion barrier for copper metallization SH Kim, SS Oh, KB Kim, DH Kang, WM Li, S Haukka, M Tuominen Applied physics letters 82 (25), 4486-4488, 2003 | 65 | 2003 |
| An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode DH Kang, IH Kim, J Jeong, B Cheong, DH Ahn, D Lee, HM Kim, KB Kim, ... Journal of applied physics 100 (5), 2006 | 61 | 2006 |
| Time-resolved analysis of the set process in an electrical phase-change memory device DH Kang, B Cheong, J Jeong, TS Lee, IH Kim, WM Kim, JY Huh Applied Physics Letters 87 (25), 2005 | 40 | 2005 |
| Lower voltage operation of a phase change memory device with a highly resistive TiON layer DH Kang, DH Ahn, MH Kwon, HS Kwon, KB Kim, KS Lee, B Cheong Japanese journal of applied physics 43 (8R), 5243, 2004 | 40 | 2004 |
| Atomic layer deposition of RuAlO thin films as a diffusion barrier for seedless Cu interconnects T Cheon, SH Choi, SH Kim, DH Kang Electrochemical and Solid-State Letters 14 (5), D57, 2011 | 39 | 2011 |
| Neuromophic system and configuration method thereof D Kang, KC Ryoo, HG Jun, H Jeong, JH Oh US Patent 9,710,747, 2017 | 36 | 2017 |
| Resistance variable memory device and method of writing data JH Lee, K Lee, HA Daewon, G Jeong, D Kang US Patent 7,907,437, 2011 | 35 | 2011 |
| Memory device and method of manufacturing the same JH Jeong, GH Koh, DH Kang US Patent 9,941,333, 2018 | 34 | 2018 |
| Emulation of spike-timing dependent plasticity in nano-scale phase change memory DH Kang, HG Jun, KC Ryoo, H Jeong, H Sohn Neurocomputing 155, 153-158, 2015 | 30 | 2015 |