| Systematic experimental and theoretical investigation of intersubband absorption in quantum wells M Tchernycheva, L Nevou, L Doyennette, FH Julien, E Warde, F Guillot, ... Physical Review B—Condensed Matter and Materials Physics 73 (12), 125347, 2006 | 319 | 2006 |
| M-plane core–shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices R Koester, JS Hwang, D Salomon, X Chen, C Bougerol, JP Barnes, ... Nano letters 11 (11), 4839-4845, 2011 | 237 | 2011 |
| Flexible light-emitting diodes based on vertical nitride nanowires X Dai, A Messanvi, H Zhang, C Durand, J Eymery, C Bougerol, FH Julien, ... Nano letters 15 (10), 6958-6964, 2015 | 236 | 2015 |
| Nanometer scale spectral imaging of quantum emitters in nanowires and its correlation to their atomically resolved structure LF Zagonel, S Mazzucco, M Tencé, K March, R Bernard, B Laslier, ... Nano letters 11 (2), 568-573, 2011 | 232 | 2011 |
| GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance PK Kandaswamy, F Guillot, E Bellet-Amalric, E Monroy, L Nevou, ... Journal of Applied Physics 104 (9), 2008 | 231 | 2008 |
| InGaN/GaN core–shell single nanowire light emitting diodes with graphene-based p-contact M Tchernycheva, P Lavenus, H Zhang, AV Babichev, G Jacopin, ... Nano letters 14 (5), 2456-2465, 2014 | 217 | 2014 |
| Integrated photonic platform based on InGaN/GaN nanowire emitters and detectors M Tchernycheva, A Messanvi, A de Luna Bugallo, G Jacopin, P Lavenus, ... Nano letters 14 (6), 3515-3520, 2014 | 207 | 2014 |
| Ultraviolet photodetector based on GaN/AlN quantum disks in a single nanowire L Rigutti, M Tchernycheva, A De Luna Bugallo, G Jacopin, FH Julien, ... Nano letters 10 (8), 2939-2943, 2010 | 202 | 2010 |
| Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis M Tchernycheva, L Travers, G Patriarche, F Glas, JC Harmand, GE Cirlin, ... Journal of Applied Physics 102 (9), 2007 | 190 | 2007 |
| Growth and characterization of InP nanowires with InAsP insertions M Tchernycheva, GE Cirlin, G Patriarche, L Travers, V Zwiller, U Perinetti, ... Nano letters 7 (6), 1500-1504, 2007 | 177 | 2007 |
| Near infrared quantum cascade detector in GaN∕ AlGaN∕ AlN heterostructures A Vardi, G Bahir, F Guillot, C Bougerol, E Monroy, SE Schacham, ... Applied Physics Letters 92 (1), 2008 | 169 | 2008 |
| Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization M Tchernycheva, C Sartel, G Cirlin, L Travers, G Patriarche, JC Harmand, ... Nanotechnology 18 (38), 385306, 2007 | 167 | 2007 |
| GaN nanowire ultraviolet photodetector with a graphene transparent contact AV Babichev, H Zhang, P Lavenus, FH Julien, AY Egorov, YT Lin, LW Tu, ... Applied Physics Letters 103, 201103, 2013 | 157 | 2013 |
| Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy M Tchernycheva, JC Harmand, G Patriarche, L Travers, GE Cirlin Nanotechnology 17 (16), 4025, 2006 | 150 | 2006 |
| Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact H Zhang, AV Babichev, G Jacopin, P Lavenus, FH Julien, A Yu Egorov, ... Journal of Applied Physics 114 (23), 2013 | 137 | 2013 |
| Epitaxy of GaN nanowires on graphene V Kumaresan, L Largeau, A Madouri, F Glas, H Zhang, F Oehler, ... Nano letters 16 (8), 4895-4902, 2016 | 135 | 2016 |
| Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy A Helman, M Tchernycheva, A Lusson, E Warde, FH Julien, K Moumanis, ... Applied physics letters 83 (25), 5196-5198, 2003 | 121 | 2003 |
| GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, ... New Journal of Physics 11 (12), 125023, 2009 | 119 | 2009 |
| Flexible white light emitting diodes based on nitride nanowires and nanophosphors N Guan, X Dai, A Messanvi, H Zhang, J Yan, E Gautier, C Bougerol, ... ACS photonics 3 (4), 597-603, 2016 | 118 | 2016 |
| Facet and in-plane crystallographic orientations of GaN nanowires grown on Si (111) L Largeau, DL Dheeraj, M Tchernycheva, GE Cirlin, JC Harmand Nanotechnology 19 (15), 155704, 2008 | 111 | 2008 |
Gwénolé JacopinInstitut Néel - CNRS, Univ. Grenoble Alpes, FranceVerified email at epfl.ch
