| Red shift of photoluminescence and absorption in dilute GaAsN alloy layers M Weyers, MSM Sato, HAH Ando Japanese Journal of Applied Physics 31 (7A), L853, 1992 | 1024 | 1992 |
| Advances in group III-nitride-based deep UV light-emitting diode technology M Kneissl, T Kolbe, C Chua, V Kueller, N Lobo, J Stellmach, A Knauer, ... Semiconductor Science and Technology 26 (1), 014036, 2010 | 810 | 2010 |
| Application of GaN-based ultraviolet-C light emitting diodes–UV LEDs–for water disinfection MA Würtele, T Kolbe, M Lipsz, A Külberg, M Weyers, M Kneissl, M Jekel Water research 45 (3), 1481-1489, 2011 | 534 | 2011 |
| The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 447 | 2020 |
| Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3 M Weyers, M Sato Applied physics letters 62 (12), 1396-1398, 1993 | 259 | 1993 |
| AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire N Susilo, S Hagedorn, D Jaeger, H Miyake, U Zeimer, C Reich, ... Applied Physics Letters 112 (4), 2018 | 219 | 2018 |
| Optical polarization characteristics of ultraviolet (In)(Al) GaN multiple quantum well light emitting diodes T Kolbe, A Knauer, C Chua, Z Yang, S Einfeldt, P Vogt, NM Johnson, ... Applied Physics Letters 97 (17), 2010 | 195 | 2010 |
| Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells T Wernicke, L Schade, C Netzel, J Rass, V Hoffmann, S Ploch, A Knauer, ... Semiconductor science and technology 27 (2), 024014, 2012 | 175 | 2012 |
| Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser P Klopp, U Griebner, M Zorn, M Weyers Applied Physics Letters 98 (7), 2011 | 170 | 2011 |
| Selective growth of GaAs in the MOMBE and MOCVD systems H Heinecke, A Brauers, F Grafahrend, C Plass, N Pütz, K Werner, ... Journal of Crystal Growth 77 (1-3), 303-309, 1986 | 149 | 1986 |
| Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes F Mehnke, C Kuhn, M Guttmann, C Reich, T Kolbe, V Kueller, A Knauer, ... Applied Physics Letters 105 (5), 2014 | 137 | 2014 |
| Highly conductive n-AlxGa1− xN layers with aluminum mole fractions above 80% F Mehnke, T Wernicke, H Pingel, C Kuhn, C Reich, V Kueller, A Knauer, ... Applied Physics Letters 103 (21), 2013 | 130 | 2013 |
| High-power 808 nm lasers with a super-large optical cavity A Knauer, G Erbert, R Staske, B Sumpf, H Wenzel, M Weyers Semiconductor science and technology 20 (6), 621, 2005 | 122 | 2005 |
| High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching M Martens, J Schlegel, P Vogt, F Brunner, R Lossy, J Würfl, M Weyers, ... Applied Physics Letters 98 (21), 2011 | 120 | 2011 |
| Performance characteristics of UV-C AlGaN-based lasers grown on sapphire and bulk AlN substrates M Martens, F Mehnke, C Kuhn, C Reich, V Kueller, A Knauer, C Netzel, ... IEEE Photonics Technology Letters 26 (4), 342-345, 2013 | 119 | 2013 |
| A comparative study of Ga (CH3) 3 and Ga (C2H5) 3 in the MOMBE of GaAs N Pütz, H Heinecke, M Heyen, P Balk, M Weyers, H Lüth Journal of crystal growth 74 (2), 292-300, 1986 | 118 | 1986 |
| High quality AlGaN grown on ELO AlN/sapphire templates U Zeimer, V Kueller, A Knauer, A Mogilatenko, M Weyers, M Kneissl Journal of crystal growth 377, 32-36, 2013 | 113 | 2013 |
| Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes C Reich, M Guttmann, M Feneberg, T Wernicke, F Mehnke, C Kuhn, ... Applied Physics Letters 107 (14), 2015 | 108 | 2015 |
| Effect of the AIN nucleation layer growth on AlN material quality O Reentilä, F Brunner, A Knauer, A Mogilatenko, W Neumann, ... Journal of Crystal Growth 310 (23), 4932-4934, 2008 | 101 | 2008 |
| Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE E Richter, C Hennig, M Weyers, F Habel, JD Tsay, WY Liu, P Brückner, ... Journal of crystal growth 277 (1-4), 6-12, 2005 | 100 | 2005 |
Michael KneisslProfessor, Institute of Solid State Physics, TU Berlin, GermanyVerified email at physik.tu-berlin.de