Articles with public access mandates - Markus WeyersLearn more
Not available anywhere: 78
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
N Susilo, S Hagedorn, D Jaeger, H Miyake, U Zeimer, C Reich, ...
Applied Physics Letters 112 (4), 2018
Mandates: German Research Foundation, Federal Ministry of Education and Research, Germany
Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
C Reich, M Guttmann, M Feneberg, T Wernicke, F Mehnke, C Kuhn, ...
Applied Physics Letters 107 (14), 2015
Mandates: German Research Foundation
Effective thermal management in ultraviolet light-emitting diodes with micro-LED arrays
NL Ploch, H Rodriguez, C Stolmacker, M Hoppe, M Lapeyrade, ...
IEEE transactions on electron devices 60 (2), 782-786, 2013
Mandates: German Research Foundation
Defect analysis in AlGaN layers on AlN templates obtained by epitaxial lateral overgrowth
A Mogilatenko, V Küller, A Knauer, J Jeschke, U Zeimer, M Weyers, ...
Journal of crystal growth 402, 222-229, 2014
Mandates: German Research Foundation
Degradation of (In) AlGaN-based UVB LEDs and migration of hydrogen
J Glaab, J Ruschel, T Kolbe, A Knauer, J Rass, HK Cho, NL Ploch, ...
IEEE Photonics Technology Letters 31 (7), 529-532, 2019
Mandates: German Research Foundation, Federal Ministry of Education and Research, Germany
Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes
M Martens, C Kuhn, E Ziffer, T Simoneit, V Kueller, A Knauer, J Rass, ...
Applied Physics Letters 108 (15), 2016
Mandates: German Research Foundation
Metamorphic Al0. 5Ga0. 5N: Si on AlN/sapphire for the growth of UVB LEDs
J Enslin, F Mehnke, A Mogilatenko, K Bellmann, M Guttmann, C Kuhn, ...
Journal of Crystal Growth 464, 185-189, 2017
Mandates: German Research Foundation, Federal Ministry of Education and Research, Germany
Controlled coalescence of MOVPE grown AlN during lateral overgrowth
V Kueller, A Knauer, U Zeimer, M Kneissl, M Weyers
Journal of crystal growth 368, 83-86, 2013
Mandates: German Research Foundation
Stabilization of sputtered AlN/sapphire templates during high temperature annealing
S Hagedorn, S Walde, A Mogilatenko, M Weyers, L Cancellara, ...
Journal of Crystal Growth 512, 142-146, 2019
Mandates: German Research Foundation, Federal Ministry of Education and Research, Germany
The effects of magnesium doping on the modal loss in AlGaN-based deep UV lasers
M Martens, C Kuhn, T Simoneit, S Hagedorn, A Knauer, T Wernicke, ...
Applied Physics Letters 110 (8), 2017
Mandates: German Research Foundation, Federal Ministry of Education and Research, Germany
High-power high-brightness semiconductor lasers based on novel waveguide concepts
D Bimberg, K Posilovic, V Kalosha, T Kettler, D Seidlitz, VA Shchukin, ...
Novel In-Plane Semiconductor Lasers IX 7616, 321-334, 2010
Mandates: German Research Foundation
Mechanisms of Implantation Damage Formation in AlxGa1–xN Compounds
DN Faye, E Wendler, M Felizardo, S Magalhães, E Alves, F Brunner, ...
The Journal of Physical Chemistry C 120 (13), 7277-7283, 2016
Mandates: Fundação para a Ciência e a Tecnologia, Portugal
Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride
E Richter, E Gridneva, M Weyers, G Tränkle
Journal of Crystal Growth 456, 97-100, 2016
Mandates: Federal Ministry of Education and Research, Germany
Analysis of crystal orientation in AlN layers grown on m-plane sapphire
A Mogilatenko, H Kirmse, J Stellmach, M Frentrup, F Mehnke, T Wernicke, ...
Journal of crystal growth 400, 54-60, 2014
Mandates: German Research Foundation
Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate
HK Cho, O Krüger, A Külberg, J Rass, U Zeimer, T Kolbe, A Knauer, ...
Semiconductor Science and Technology 32 (12), 12LT01, 2017
Mandates: Federal Ministry of Education and Research, Germany
High-quality AlN grown on a thermally decomposed sapphire surface
S Hagedorn, A Knauer, F Brunner, A Mogilatenko, U Zeimer, M Weyers
Journal of Crystal Growth 479, 16-21, 2017
Mandates: German Research Foundation, Federal Ministry of Education and Research, Germany
Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers
C Netzel, A Knauer, M Weyers
Applied Physics Letters 101 (24), 2012
Mandates: German Research Foundation
Measurement and simulation of top-and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies
M Brendel, M Helbling, A Knigge, F Brunner, M Weyers
Journal of Applied Physics 118 (24), 2015
Mandates: German Research Foundation
V-pit to truncated pyramid transition in AlGaN-based heterostructures
A Mogilatenko, J Enslin, A Knauer, F Mehnke, K Bellmann, T Wernicke, ...
Semiconductor Science and Technology 30 (11), 114010, 2015
Mandates: German Research Foundation
HVPE of AlxGa1− xN layers on planar and trench patterned sapphire
S Hagedorn, E Richter, U Zeimer, D Prasai, W John, M Weyers
Journal of crystal growth 353 (1), 129-133, 2012
Mandates: German Research Foundation
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