| Negative differential resistance in boron nitride graphene heterostructures: Physical mechanisms and size scaling analysis Y Zhao, Z Wan, X Xu, SR Patil, U Hetmaniuk, MP Anantram Scientific reports 5 (1), 10712, 2015 | 53 | 2015 |
| A forming-free bipolar resistive switching behavior based on ITO/V2O5/ITO structure Z Wan, RB Darling, A Majumdar, MP Anantram Applied Physics Letters 111 (4), 2017 | 39 | 2017 |
| Programmable diode/resistor-like behavior of nanostructured vanadium pentoxide xerogel thin film Z Wan, RB Darling, MP Anantram Physical Chemistry Chemical Physics 17 (45), 30248-30254, 2015 | 16 | 2015 |
| Negative differential resistance in graphene boron nitride heterostructure controlled by twist and phonon-scattering Y Zhao, Z Wan, U Hetmanuik, MP Anantram IEEE Electron Device Letters 37 (9), 1242-1245, 2016 | 15 | 2016 |
| Resistive memory cell Y Cai, Z Wan, R Huang US Patent 8,995,165, 2015 | 12 | 2015 |
| Bipolar Resistive Switching Characteristics of Thermally Evaporated V2O5 Thin Films Z Wan, H Mohammad, Y Zhao, RB Darling, MP Anantram IEEE Electron Device Letters 39 (9), 1290-1293, 2018 | 9 | 2018 |
| Engineering of the resistive switching properties in V2O5 thin film by atomic structural transition: Experiment and theory Z Wan, H Mohammad, Y Zhao, C Yu, RB Darling, MP Anantram Journal of Applied Physics 124 (10), 2018 | 6 | 2018 |
| Resistive Switching Effects of Vanadium Pentoxide Thin Film Z Wan | 2 | 2018 |
| A modeling study of mechanisms for NDR in graphene-BN-graphene heterostructures Y Zhao, Z Wan, X Xu, SR Patil, U Hetmaniuk, MP Anantram 2015 IEEE Nanotechnology Materials and Devices Conference (NMDC), 1-2, 2015 | 2 | 2015 |
| Vanadium Oxide Based RRAM Device Z Wan, RB Darling, MP Anantram MRS Advances 2 (52), 3019-3024, 2017 | | 2017 |
| A Novel Floating Gate Structure for High-Reliability and High-Speed Flash Application S Mei, Y Cai, Z Wan, R Huang ECS Transactions 44 (1), 115, 2012 | | 2012 |
M. P. AnantramUniversity of WashingtonVerified email at uw.edu
