| A review of three‐dimensional resistive switching cross‐bar array memories from the integration and materials property points of view JY Seok, SJ Song, JH Yoon, KJ Yoon, TH Park, DE Kwon, H Lim, GH Kim, ... Advanced Functional Materials 24 (34), 5316-5339, 2014 | 416 | 2014 |
| Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta2O5/HfO2‐x/TiN Structure JH Yoon, SJ Song, IH Yoo, JY Seok, KJ Yoon, DE Kwon, TH Park, ... Advanced Functional Materials 24 (32), 5086-5095, 2014 | 261 | 2014 |
| 32× 32 crossbar array resistive memory composed of a stacked Schottky diode and unipolar resistive memory GH Kim, JH Lee, Y Ahn, W Jeon, SJ Song, JY Seok, JH Yoon, KJ Yoon, ... Advanced Functional Materials 23 (11), 1440-1449, 2013 | 200 | 2013 |
| Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots. JH Yoon, JH Han, JS Jung, W Jeon, GH Kim, SJ Song, JY Seok, KJ Yoon, ... Advanced Materials (Deerfield Beach, Fla.) 25 (14), 1987-1992, 2013 | 200 | 2013 |
| Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash JH Yoon, KM Kim, SJ Song, JY Seok, KJ Yoon, DE Kwon, TH Park, ... Advanced Materials 27 (25), 3811-3816, 2015 | 190 | 2015 |
| Nociceptive memristor Y Kim, YJ Kwon, DE Kwon, KJ Yoon, JH Yoon, S Yoo, HJ Kim, TH Park, ... Advanced Materials 30 (8), 1704320, 2018 | 179 | 2018 |
| All-printed triboelectric nanogenerator ML Seol, JW Han, DI Moon, KJ Yoon, CS Hwang, M Meyyappan Nano Energy 44, 82-88, 2018 | 120 | 2018 |
| Titanium dioxide thin films for next-generation memory devices SK Kim, KM Kim, DS Jeong, W Jeon, KJ Yoon, CS Hwang Journal of Materials Research 28 (3), 313-325, 2013 | 114 | 2013 |
| Review of semiconductor flash memory devices for material and process issues SS Kim, SK Yong, W Kim, S Kang, HW Park, KJ Yoon, DS Sheen, S Lee, ... Advanced Materials 35 (43), 2200659, 2023 | 112 | 2023 |
| Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO2/Pt cell KJ Yoon, MH Lee, GH Kim, SJ Song, JY Seok, S Han, JH Yoon, KM Kim, ... Nanotechnology 23 (18), 185202, 2012 | 111 | 2012 |
| Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments G Hwan Kim, J Ho Lee, J Yeong Seok, S Ji Song, J Ho Yoon, ... Applied physics letters 98 (26), 2011 | 98 | 2011 |
| Electronic resistance switching in the Al/TiO x/Al structure for forming-free and area-scalable memory XL Shao, LW Zhou, KJ Yoon, H Jiang, JS Zhao, KL Zhang, S Yoo, ... Nanoscale 7 (25), 11063-11074, 2015 | 85 | 2015 |
| What will come after V‐NAND—vertical resistive switching memory? KJ Yoon, Y Kim, CS Hwang Advanced Electronic Materials 5 (9), 1800914, 2019 | 84 | 2019 |
| Fabrication of a Cu‐cone‐shaped cation source inserted conductive bridge random access memory and its improved switching reliability HJ Kim, TH Park, KJ Yoon, WM Seong, JW Jeon, YJ Kwon, Y Kim, ... Advanced Functional Materials 29 (8), 1806278, 2019 | 65 | 2019 |
| A stateful logic family based on a new logic primitive circuit composed of two antiparallel bipolar memristors N Xu, TG Park, HJ Kim, X Shao, KJ Yoon, TH Park, L Fang, KM Kim, ... Advanced Intelligent Systems 2 (1), 1900082, 2020 | 53 | 2020 |
| Fully Functional Logic‐In‐Memory Operations Based on a Reconfigurable Finite‐State Machine Using a Single Memristor N Xu, KJ Yoon, KM Kim, L Fang, CS Hwang Advanced Electronic Materials 4 (11), 1800189, 2018 | 52 | 2018 |
| Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109 KJ Yoon, GH Kim, S Yoo, W Bae, JH Yoon, TH Park, DE Kwon, YJ Kwon, ... Advanced Electronic Materials 3 (7), 1700152, 2017 | 51 | 2017 |
| Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2–x Structure with a Sub-μm2 Cell Area JH Yoon, S Yoo, SJ Song, KJ Yoon, DE Kwon, YJ Kwon, TH Park, HJ Kim, ... ACS Applied Materials & Interfaces 8 (28), 18215-18221, 2016 | 50 | 2016 |
| The current limit and self-rectification functionalities in the TiO 2/HfO 2 resistive switching material system JH Yoon, DE Kwon, Y Kim, YJ Kwon, KJ Yoon, TH Park, XL Shao, ... Nanoscale 9 (33), 11920-11928, 2017 | 49 | 2017 |
| Substrate dependent growth behaviors of plasma-enhanced atomic layer deposited nickel oxide films for resistive switching application SJ Song, SW Lee, GH Kim, JY Seok, KJ Yoon, JH Yoon, CS Hwang, ... Chemistry of Materials 24 (24), 4675-4685, 2012 | 48 | 2012 |
