Jaroslaw Z. Domagala

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Janusz SadowskiInstitute of Physics Polish Academy of Sciences OR Linnaeus University OR Lund UniversityVerified email at ensemble3.eu
Michał LeszczynskiVerified email at unipress.waw.pl
Wojciech PaszkowiczProfessor of Materials Science, Institute of Physics, WarsawVerified email at ifpan.edu.pl
Slawomir KretInstitute of Physics, Polish Academy of SciencesVerified email at ifpan.edu.pl
Piotr DluzewskiInstitute of Phisics PASVerified email at ifpan.edu.pl
Marek GodlewskiInstytut Fizyki PANVerified email at ifpan.edu.pl
Roman MinikayevInstitute of Physics PAS, Warsaw Verified email at ifpan.edu.pl
Michal BockowskiInstitute of High Pressure Physics PASVerified email at unipress.waw.pl
Robert CzerneckiInstitue of High Pressure Physics PASVerified email at unipress.waw.pl
Henryk TeisseyreInstitute of Physics of the Polish Academy of SciencesVerified email at ifpan.edu.pl
Elżbieta GuziewiczInstitute of Physics Polish Academy of Sciences & Los Alamos National LaboratoryVerified email at ifpan.edu.pl
Roland MathieuUppsala UniversityVerified email at angstrom.uu.se
P. SvedlindhUppsala UniversityVerified email at angstrom.uu.se
Maciej SawickiInstitute of Physics, Polish Academy of SciencesVerified email at ifpan.edu.pl
Grzegorz KarczewskiInstytut Fizyki, Polska Akademia NaukVerified email at ifpan.edu.pl
Anna ReszkaInstitute of Physics Polish Academy of SciencesVerified email at ifpan.edu.pl
Eliana KaminskaInstitute of Electron Technology, Institute of High Pressure PhysicsVerified email at unipress.waw.pl
Krzysztof DybkoInstitute of Physics, Polish Academy of SciencesVerified email at ifpan.edu.pl
Tomasz DietlInstitute of Physics, Polish Academy of SciencesVerified email at ifpan.edu.pl
Piotr PerlinInstitute of High Pressure PhysicsVerified email at unipress.waw.pl

Jaroslaw Z. Domagala

Institute of Physics, Polish Academy of Science, Warsaw, Poland

Verified email at ifpan.edu.pl

Materials Science Crystallography Physics


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Electrical and optical properties of NiO films deposited by magnetron sputtering. M Guziewicz, J Grochowski, M Borysiewicz, E Kaminska, JZ Domagala, ... Optica Applicata 41 (2), 2011	127	2011
Basic ammonothermal growth of Gallium Nitride–State of the art, challenges, perspectives M Zajac, R Kucharski, K Grabianska, A Gwardys-Bak, A Puchalski, ... Progress in Crystal Growth and Characterization of Materials 64 (3), 63-74, 2018	110	2018
Influence of defects on the lattice constant of GaMnAs J Sadowski, JZ Domagala Physical Review B 69 (7), 075206, 2004	106	2004
Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs (100) substrates J Sadowski, R Mathieu, P Svedlindh, JZ Domagała, J Bak-Misiuk, ... Applied Physics Letters 78 (21), 3271-3273, 2001	84	2001
Structural and magnetic properties of molecular beam epitaxy grown GaMnAs layers J Sadowski, JZ Domagała, J Bak-Misiuk, S Koleśnik, M Sawicki, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000	83	2000
Observation of topological crystalline insulator surface states on (111)-oriented PbSnSe films CM Polley, P Dziawa, A Reszka, A Szczerbakow, R Minikayev, ... Physical Review B 89 (7), 075317, 2014	81	2014
The microstructure of gallium nitride monocrystals grown at high pressure M Leszczynski, I Grzegory, H Teisseyre, T Suski, M Bockowski, J Jun, ... Journal of crystal growth 169 (2), 235-242, 1996	81	1996
Postgrowth annealing of (Ga, Mn) As under As capping: An alternative way to increase TC M Adell, L Ilver, J Kanski, V Stanciu, P Svedlindh, J Sadowski, ... Applied Physics Letters 86 (11), 2005	79	2005
Effect of Mn interstitials on the lattice parameter of I Kuryliszyn-Kudelska, JZ Domagała, T Wojtowicz, X Liu, E Łusakowska, ... Journal of applied physics 95 (2), 603-608, 2004	74	2004
Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies Z Liliental-Weber, M Benamara, J Washburn, JZ Domagala, J Bak-Misiuk, ... Journal of electronic materials 30, 439-444, 2001	62	2001
Influence of GaN substrate off‐cut on properties of InGaN and AlGaN layers M Sarzynski, M Leszczynski, M Krysko, JZ Domagala, R Czernecki, ... Crystal Research and Technology 47 (3), 321-328, 2012	53	2012
Misfit strain anisotropy in partially relaxed lattice-mismatched InGaAs/GaAs heterostructures O Yastrubchak, T Wosiński, JZ Domagała, E Łusakowska, T Figielski, ... Journal of Physics: Condensed Matter 16 (2), S1, 2003	53	2003
Monocrystalline ZnO films on GaN/Al2O3 by atomic layer epitaxy in gas flow K Kopalko, M Godlewski, JZ Domagala, E Lusakowska, R Minikayev, ... Chemistry of materials 16 (8), 1447-1450, 2004	51	2004
Lattice constant of doped semiconductor M Leszczyński, E Litwin-Staszewska, T Suski, J Bąk-Misiuk, J Domagała Acta Physica Polonica A 88 (5), 837-840, 1995	50	1995
Monocrystalline zinc oxide films grown by atomic layer deposition T Krajewski, G Łuka, B Witkowski, B Kowalski, K Kopalko, JZ Domagala, ... Thin Solid Films 518 (16), 4556-4559, 2010	48	2010
Thermal properties of CaNdAlO4 and SrLaAlO4 single crystals P Byszewski, J Domagała, J Fink-Finowicki, A Pajaczkowska Materials research bulletin 27 (4), 483-490, 1992	46	1992
High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet micro-Raman scattering M Kuball, JM Hayes, T Suski, J Jun, M Leszczynski, J Domagala, HH Tan, ... Journal of Applied Physics 87 (6), 2736-2741, 2000	44	2000
Thermal expansion of bulk and homoepitaxial GaN V Kirchner, H Heinke, D Hommel, JZ Domagala, M Leszczynski Applied Physics Letters 77 (10), 1434-1436, 2000	41	2000
Photoreflectance study of the fundamental optical properties of (Ga, Mn) As epitaxial films O Yastrubchak, J Żuk, H Krzyżanowska, JZ Domagala, T Andrearczyk, ... Physical Review B—Condensed Matter and Materials Physics 83 (24), 245201, 2011	40	2011
Lattice dilation by free electrons in heavily doped GaAs: Si M Leszczynski, J Bak‐Misiuk, J Domagala, J Muszalski, M Kaniewska, ... Applied physics letters 67 (4), 539-541, 1995	38	1995

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