Doping-free complementary logic gates enabled by two-dimensional polarity-controllable transistors GV Resta, Y Balaji, D Lin, IP Radu, F Catthoor, PE Gaillardon, ... ACS nano 12 (7), 7039-7047, 2018 | 130 | 2018 |
Polarity control in WSe2 double-gate transistors GV Resta, S Sutar, Y Balaji, D Lin, P Raghavan, I Radu, F Catthoor, ... Scientific reports 6 (1), 29448, 2016 | 97 | 2016 |
Controlled Sulfurization Process for the Synthesis of Large Area MoS2 Films and MoS2/WS2 Heterostructures D Chiappe, I Asselberghs, S Sutar, S Iacovo, V Afanas' ev, A Stesmans, ... Advanced Materials Interfaces 3 (4), 1500635, 2016 | 81 | 2016 |
Formation mechanism of 2D SnS 2 and SnS by chemical vapor deposition using SnCl 4 and H 2 S H Zhang, Y Balaji, AN Mehta, M Heyns, M Caymax, I Radu, ... Journal of Materials Chemistry C 6 (23), 6172-6178, 2018 | 74 | 2018 |
MoS2/MoTe2 Heterostructure Tunnel FETs Using Gated Schottky Contacts Y Balaji, Q Smets, Á Śzabo, M Mascaro, D Lin, I Asselberghs, I Radu, ... Advanced Functional Materials 30 (4), 1905970, 2020 | 68 | 2020 |
Molecular doping of MoS2 transistors by self-assembled oleylamine networks CJ Lockhart de la Rosa, R Phillipson, J Teyssandier, J Adisoejoso, ... Applied Physics Letters 109 (25), 2016 | 57 | 2016 |
Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures Y Balaji, Q Smets, CJL De La Rosa, AKA Lu, D Chiappe, T Agarwal, ... IEEE Journal of the Electron Devices Society 6, 1048-1055, 2018 | 48 | 2018 |
Devices and circuits using novel 2-D materials: a perspective for future VLSI systems GV Resta, A Leonhardt, Y Balaji, S De Gendt, PE Gaillardon, G De Micheli IEEE Transactions on Very Large Scale Integration (VLSI) Systems 27 (7 …, 2019 | 34 | 2019 |
On the van der Waals epitaxy of homo-/heterostructures of transition metal dichalcogenides W Mortelmans, A Nalin Mehta, Y Balaji, S Sergeant, R Meng, M Houssa, ... ACS applied materials & interfaces 12 (24), 27508-27517, 2020 | 26 | 2020 |
Epitaxial registry and crystallinity of MoS2 via molecular beam and metalorganic vapor phase van der Waals epitaxy W Mortelmans, S El Kazzi, B Groven, A Nalin Mehta, Y Balaji, S De Gendt, ... Applied Physics Letters 117 (3), 2020 | 16 | 2020 |
Fundamental limitation of van der Waals homoepitaxy by stacking fault formation in WSe2 W Mortelmans, AN Mehta, Y Balaji, S El Kazzi, S Sergeant, M Houssa, ... 2D Materials 7 (2), 025027, 2020 | 16 | 2020 |
Demonstration of 2e12 cm− 2 eV− 1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5 nm EOT A Gaur, Y Balaji, D Lin, C Adelmann, J Van Houdt, M Heyns, D Mocuta, ... Microelectronic Engineering 178, 145-149, 2017 | 15 | 2017 |
Towards high-performance polarity-controllable FETs with 2D materials GV Resta, JR Gonzalez, Y Balaji, T Agarwal, D Lin, F Catthor, IP Radu, ... 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), 637-641, 2018 | 5 | 2018 |
Electron-beam annealing of Josephson junctions for frequency tuning of quantum processors Y Balaji, N Acharya, R Armstrong, KG Crawford, S Danilin, T Dixon, ... arXiv preprint arXiv:2402.17395, 2024 | 3 | 2024 |
Tunnel FETs using Phosphorene/ReS2 heterostructures Y Balaji, Q Smets, D Lin, I Asselberghs, I Radu, G Groeseneken 2019 Device Research Conference (DRC), 113-114, 2019 | 2 | 2019 |
Integration of through-sapphire substrate machining with superconducting quantum processors N Acharya, R Armstrong, Y Balaji, KG Crawford, JC Gates, PC Gow, ... arXiv preprint arXiv:2406.09930, 2024 | | 2024 |
Qubit frequency tuning via electron-beam irradiation C Shelly, Y Balaji, N Acharya, R Armstrong, K Crawford, S Danilin, ... Bulletin of the American Physical Society, 2024 | | 2024 |
Novel Insights into the Homo-/Heteroepitaxy of van der Waals Materials W Mortelmans, A Nalin Mehta, Y Balaji, K De Smet, S El Kazzi, M Houssa, ... | | 2020 |
Heterojunction tunnel FETs using 2D materials as channel Y Balaji | | 2020 |
2019 Index IEEE Transactions on Very Large Scale Integration Systems (VLSI) Vol. 27 A Afzalian, I Agbo, J Aghassi-Hagmann, A Agrawal, M Ahmadi, ... IEEE Transactions on Very Large Scale Integration (VLSI) Systems 27 (12), 2019 | | 2019 |