| Direct-bandgap emission from hexagonal Ge and SiGe alloys EMT Fadaly, A Dijkstra, JR Suckert, D Ziss, MAJ Van Tilburg, C Mao, ... Nature 580 (7802), 205-209, 2020 | 348 | 2020 |
| Observation of Conductance Quantization in InSb Nanowire Networks EMT Fadaly, H Zhang, S Conesa-Boj, D Car, Ö Gül, SR Plissard, ... Nano Letters 17 (11), 6511–6515, 2017 | 47 | 2017 |
| Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and SixGe1–x Alloys in Nanowires by Raman Spectroscopy D De Matteis, M De Luca, EMT Fadaly, MA Verheijen, M López-Suárez, ... ACS nano 14 (6), 6845-6856, 2020 | 22 | 2020 |
| Unveiling planar defects in hexagonal group IV materials EMT Fadaly, A Marzegalli, Y Ren, L Sun, A Dijkstra, D De Matteis, ... Nano Letters 21 (8), 3619-3625, 2021 | 21 | 2021 |
| InSb Nanowires with Built-In GaxIn1–xSb Tunnel Barriers for Majorana Devices D Car, S Conesa-Boj, H Zhang, RLM Op het Veld, MWA De Moor, ... Nano Letters 17 (2), 721-727, 2017 | 12 | 2017 |
| Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2H L Vincent, EMT Fadaly, C Renard, WHJ Peeters, M Vettori, F Panciera, ... Advanced Materials Interfaces 9 (16), 2102340, 2022 | 7 | 2022 |
| Low surface recombination in hexagonal SiGe alloy nanowires: Implications for SiGe-based nanolasers WJHWJ Berghuis, MAJ van Tilburg, WHJ Peeters, VT van Lange, ... ACS Applied Nano Materials 7 (2), 2343-2351, 2024 | 4 | 2024 |
| Light emission from direct bandgap hexagonal SiGe JEM Haverkort, Y Ren, A Dijkstra, E Fadaly, MA Verheijen, G Reithmaier, ... Integrated Photonics Research, Silicon and Nanophotonics, ITu4I. 5, 2018 | 3 | 2018 |
| Op het Veld RLM, Kölling S., Kouwenhoven LP, Bakkers EPAM EMT Fadaly, H Zhang, S Conesa-Boj, D Car, Ö Gül, SR Plissard Nano Lett 17, 6511, 2017 | 3 | 2017 |
| van Lange, Ksenia Korzun, Sebastian Kölling, Marcel A. Verheijen, David Busse, Claudia Rödl, Jürgen Furthmüller, Friedhelm Bechstedt, Julian Stangl, Jonathan J. Finley, Silvana … MT Elham, AD Fadaly, DZ Jens Renè Suckert, AJ Marvin, CM van Tilburg, ... Direct-bandgap emission from hexagonal Ge and SiGe alloys. Nature, 205-209, 2020 | 2 | 2020 |
| Molecular Beam Epitaxy of Catalyst-Free InAs Nanowires on Si (111) E Fadaly Master thesis, Chalmers Institute of Technology, 2015, 2015 | 2 | 2015 |
| Onset of uncontrolled polytypism during the Au-catalyzed growth of wurtzite GaAs nanowires WHJ Peeters, M Vettori, EMT Fadaly, A Danescu, C Mao, MA Verheijen, ... Physical Review Materials 8 (2), L020401, 2024 | 1 | 2024 |
| Epitaxy of Hexagonal SiGe Alloys for Light Emission EMT Fadaly | 1 | 2021 |
| Towards a photonic band edge laser using hexagonal-SiGe nanowire arrays (Conference Presentation) D Busse, E Fadaly, VT van Lange, JR Suckert, A Dijkstra, M van Tilburg, ... Novel In-Plane Semiconductor Lasers XIX 11301, 113010K, 2020 | 1 | 2020 |
| Crossed InSb nanowire junctions for Majorana operations D Car, S Gazibegovic, S Balk, SC Boj, E Fadaly, H Zhang, R op het Veld, ... 2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016 | 1 | 2016 |
| Nanosecond Carrier Lifetime of Hexagonal Ge VT van Lange, A Dijkstra, EMT Fadaly, WHJ Peeters, MAJ van Tilburg, ... ACS photonics 11 (10), 4258-4267, 2024 | | 2024 |
| Growth-related I3 defects in hexagonal Ge-2H and their thermal evolution L Vincent, M Verheijen, E Fadaly, W Peters, L Travers, C Renard, ... GADEST 2024, 2024 | | 2024 |
| Light-emitting or light-absorbing component S Botti, F Bechstedt, JEM Haverkort, EPAM Bakkers, E Fadaly, A Dijkstra US Patent 12,065,601, 2024 | | 2024 |
| Optical Matrix Element of Hexagonal Ge VT Lange, A Dijkstra, EMT Fadaly, WHJ Peeters, MAJ Tilburg, E Bakkers, ... CLEO: Science and Innovations, SM4H. 7, 2023 | | 2023 |
| Efficient Light Emission from Hexagonal SiGe EMT Fadaly, JR Suckert, D Ziss, MAJ Tilburg, C Mao, Y Ren, VT Lange, ... 2021 Silicon Nanoelectronics Workshop (SNW), 1-2, 2021 | | 2021 |
Erik BakkersVerified email at tue.nl