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Xavier JORDA
Xavier JORDA
Research Scientist, IMB-CNM (CSIC)
Verified email at imb-cnm.csic.es - Homepage
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Cited by
Year
Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects
A Matallana, E Ibarra, I López, J Andreu, JI Garate, X Jordà, J Rebollo
Renewable and Sustainable Energy Reviews 113, 109264, 2019
1552019
SiC Schottky diodes for harsh environment space applications
P Godignon, X Jordà, M Vellvehi, X Perpina, V Banu, D López, J Barbero, ...
IEEE Transactions on Industrial Electronics 58 (7), 2582-2590, 2010
1152010
Thermomechanical assessment of die-attach materials for wide bandgap semiconductor devices and harsh environment applications
LA Navarro, X Perpina, P Godignon, J Montserrat, V Banu, M Vellvehi, ...
IEEE transactions on Power Electronics 29 (5), 2261-2271, 2013
1132013
Short-circuit study in medium-voltage GaN cascodes, p-GaN HEMTs, and GaN MISHEMTs
M Fernández, X Perpiñà, J Roig-Guitart, M Vellvehi, F Bauwens, M Tack, ...
IEEE Transactions on Industrial Electronics 64 (11), 9012-9022, 2017
932017
SiC integrated circuit control electronics for high-temperature operation
M Alexandru, V Banu, X Jordà, J Montserrat, M Vellvehi, D Tournier, ...
IEEE Transactions on Industrial Electronics 62 (5), 3182-3191, 2014
832014
Reliability and safety in railway
X Perpinya
BoD–Books on Demand, 2012
772012
Irradiance-based emissivity correction in infrared thermography for electronic applications
M Vellvehi, X Perpiñà, GL Lauro, F Perillo, X Jordà
Review of scientific instruments 82 (11), 2011
732011
Long-term reliability of railway power inverters cooled by heat-pipe-based systems
X Perpina, X Jorda, M Vellvehi, J Rebollo, M Mermet-Guyennet
IEEE transactions on industrial electronics 58 (7), 2662-2672, 2010
652010
P-GaN HEMTs drain and gate current analysis under short-circuit
M Fernández, X Perpiñà, J Roig, M Vellvehi, F Bauwens, X Jordà, M Tack
IEEE Electron Device Letters 38 (4), 505-508, 2017
612017
Analysis of clamped inductive turnoff failure in railway traction IGBT power modules under overload conditions
X Perpina, JF Serviere, J Urresti-Ibañez, I Cortes, X Jorda, S Hidalgo, ...
IEEE Transactions on Industrial Electronics 58 (7), 2706-2714, 2010
602010
Origin of large negative electrocaloric effect in antiferroelectric
P Vales-Castro, R Faye, M Vellvehi, Y Nouchokgwe, X Perpiñà, ...
Physical Review B 103 (5), 054112, 2021
552021
GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling
A Pérez-Tomás, M Placidi, X Perpiñà, A Constant, P Godignon, X Jordà, ...
Journal of Applied Physics 105 (11), 2009
552009
Use of ASICs in PWM techniques for power converters
JM Retif, B Allard, X Jorda, A Perez
Proceedings of IECON'93-19th Annual Conference of IEEE Industrial …, 1993
501993
High-frequency ultrasonic atomization with pulsed excitation
A Lozano, H Amaveda, F Barreras, X Jorda, M Lozano
J. Fluids Eng. 125 (6), 941-945, 2003
482003
Schottky versus bipolar 3.3 kV SiC diodes
A Pérez-Tomás, P Brosselard, J Hassan, X Jorda, P Godignon, M Placidi, ...
Semiconductor Science and Technology 23 (12), 125004, 2008
432008
IGBT module failure analysis in railway applications
X Perpiñà, JF Serviere, X Jordà, A Fauquet, S Hidalgo, J Urresti-Ibañez, ...
Microelectronics Reliability 48 (8-9), 1427-1431, 2008
432008
Bipolar conduction impact on electrical characteristics and reliability of 1.2-and 3.5-kV 4H-SiC JBS diodes
P Brosselard, N Camara, V Banu, X Jordà, M Vellvehi, P Godignon, ...
IEEE Transactions on Electron Devices 55 (8), 1847-1856, 2008
382008
Thermal resistance investigations on new leadframe-based LED packages and boards
B Pardo, A Gasse, A Fargeix, J Jakovenko, RJ Werkhoven, X Perpiñà, ...
Microelectronics Reliability 53 (8), 1084-1094, 2013
372013
Internal infrared laser deflection system: a tool for power device characterization
X Perpiñà, X Jordà, N Mestres, M Vellvehi, P Godignon, J Millán, ...
Measurement Science and Technology 15 (5), 1011, 2004
342004
Coupled electro-thermal simulation of a DC/DC converter
M Vellvehi, X Jordà, P Godignon, C Ferrer, J Millán
Microelectronics Reliability 47 (12), 2114-2121, 2007
332007
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