Articles with public access mandates - Gordon CallsenLearn more
Not available anywhere: 7
Germanium–the superior dopant in n‐type GaN
C Nenstiel, M Bügler, G Callsen, F Nippert, T Kure, S Fritze, A Dadgar, ...
physica status solidi (RRL)–Rapid Research Letters 9 (12), 716-721, 2015
Mandates: German Research Foundation
Spectral diffusion in nitride quantum dots: Emission energy dependent linewidths broadening via giant built‐in dipole moments
C Kindel, G Callsen, S Kako, T Kawano, H Oishi, G Hönig, A Schliwa, ...
physica status solidi (RRL)–Rapid Research Letters 8 (5), 408-413, 2014
Mandates: German Research Foundation
Optical emission of GaN/AlN quantum-wires–the role of charge transfer from a nanowire template
J Müßener, A Ludwig, S Kalinowski, G Callsen, P Hille, J Schörmann, ...
Nanoscale 10 (12), 5591-5598, 2018
Mandates: German Research Foundation, Banking Foundation "la Caixa", European …
Desorption induced GaN quantum dots on (0001) AlN by MOVPE
K Bellmann, F Tabataba‐Vakili, T Wernicke, A Strittmatter, G Callsen, ...
physica status solidi (RRL)–Rapid Research Letters 9 (9), 526-529, 2015
Mandates: German Research Foundation
Carbon doped GaN layers grown by Pseudo‐Halide Vapour Phase Epitaxy
D Siche, R Zwierz, K Kachel, N Jankowski, C Nenstiel, G Callsen, ...
Crystal Research and Technology 52 (8), 1600364, 2017
Mandates: German Research Foundation
Identifying multi‐excitons in quantum dots: the subtle connection between electric dipole moments and emission linewidths
G Callsen, GMO Pahn
physica status solidi (RRL)–Rapid Research Letters 9 (9), 521-525, 2015
Mandates: German Research Foundation
Influence of carbon doping and hydrogen co-doping on acceptor related optical transitions in ZnO nanowires
F Mohammadbeigi, T Kure, G Callsen, ES Kumar, MR Wagner, ...
Semiconductor Science and Technology 32 (4), 045017, 2017
Mandates: Natural Sciences and Engineering Research Council of Canada, German Research …
Available somewhere: 49
Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers
MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ...
Physical Review B—Condensed Matter and Materials Physics 84 (3), 035313, 2011
Mandates: German Research Foundation
Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
F Nippert, SY Karpov, G Callsen, B Galler, T Kure, C Nenstiel, MR Wagner, ...
Applied Physics Letters 109 (16), 2016
Mandates: German Research Foundation
Lithium related deep and shallow acceptors in Li-doped ZnO nanocrystals
C Rauch, W Gehlhoff, MR Wagner, E Malguth, G Callsen, R Kirste, ...
Journal of Applied Physics 107 (2), 2010
Mandates: German Research Foundation
Signature of the two-dimensional phonon dispersion in graphene probed by double-resonant Raman scattering
P May, M Lazzeri, P Venezuela, F Herziger, G Callsen, JS Reparaz, ...
Physical Review B—Condensed Matter and Materials Physics 87 (7), 075402, 2013
Mandates: German Research Foundation
A quantum optical study of thresholdless lasing features in high-β nitride nanobeam cavities
ST Jagsch, NV Triviño, F Lohof, G Callsen, S Kalinowski, IM Rousseau, ...
Nature communications 9 (1), 564, 2018
Mandates: Swiss National Science Foundation, German Research Foundation, European …
Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements
G Callsen, JS Reparaz, MR Wagner, R Kirste, C Nenstiel, A Hoffmann, ...
Applied Physics Letters 98 (6), 2011
Mandates: German Research Foundation
Optical signature of Mg-doped GaN: Transfer processes
G Callsen, MR Wagner, T Kure, JS Reparaz, M Bügler, J Brunnmeier, ...
Physical Review B—Condensed Matter and Materials Physics 86 (7), 075207, 2012
Mandates: German Research Foundation
Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN
R Kirste, R Collazo, G Callsen, MR Wagner, T Kure, J Sebastian Reparaz, ...
Journal of Applied Physics 110 (9), 2011
Mandates: German Research Foundation
Excited state properties of donor bound excitons in ZnO
BK Meyer, J Sann, S Eisermann, S Lautenschlaeger, MR Wagner, ...
Physical Review B—Condensed Matter and Materials Physics 82 (11), 115207, 2010
Mandates: German Research Foundation
Point-defect nature of the ultraviolet absorption band in AlN
D Alden, JS Harris, Z Bryan, JN Baker, P Reddy, S Mita, G Callsen, ...
Physical Review Applied 9 (5), 054036, 2018
Mandates: US National Science Foundation, US Department of Energy, US Department of …
Manifestation of unconventional biexciton states in quantum dots
G Hönig, G Callsen, A Schliwa, S Kalinowski, C Kindel, S Kako, ...
Nature communications 5 (1), 5721, 2014
Mandates: German Research Foundation
Compensation effects in GaN: Mg probed by Raman spectroscopy and photoluminescence measurements
R Kirste, MP Hoffmann, J Tweedie, Z Bryan, G Callsen, T Kure, C Nenstiel, ...
Journal of Applied Physics 113 (10), 2013
Mandates: German Research Foundation
Steering photon statistics in single quantum dots: From one-to two-photon emission
G Callsen, A Carmele, G Hönig, C Kindel, J Brunnmeier, MR Wagner, ...
Physical Review B—Condensed Matter and Materials Physics 87 (24), 245314, 2013
Mandates: German Research Foundation
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