| Fermi-level pinning and charge neutrality level in germanium A Dimoulas, P Tsipas, A Sotiropoulos, EK Evangelou Applied physics letters 89 (25), 2006 | 729 | 2006 |
| Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag (111) P Tsipas, S Kassavetis, D Tsoutsou, E Xenogiannopoulou, E Golias, ... Applied Physics Letters 103 (25), 2013 | 319 | 2013 |
| Silicene: a review of recent experimental and theoretical investigations M Houssa, A Dimoulas, A Molle Journal of Physics: Condensed Matter 27 (25), 253002, 2015 | 253 | 2015 |
| HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition A Dimoulas, G Mavrou, G Vellianitis, E Evangelou, N Boukos, M Houssa, ... Applied Physics Letters 86 (3), 2005 | 185 | 2005 |
| High-quality, large-area MoSe 2 and MoSe 2/Bi 2 Se 3 heterostructures on AlN (0001)/Si (111) substrates by molecular beam epitaxy E Xenogiannopoulou, P Tsipas, KE Aretouli, D Tsoutsou, SA Giamini, ... Nanoscale 7 (17), 7896-7905, 2015 | 162 | 2015 |
| BJ v. Wees, TM Klapwijk, W. vd Graaf, and G. Borghs A Dimoulas, JP Heida Phys. Rev. Lett 74, 602, 1995 | 156 | 1995 |
| Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy KE Aretouli, P Tsipas, D Tsoutsou, J Marquez-Velasco, ... Applied Physics Letters 106 (14), 2015 | 148 | 2015 |
| Electrical properties of La2O3 and HfO2∕ La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices G Mavrou, S Galata, P Tsipas, A Sotiropoulos, Y Panayiotatos, ... Journal of Applied Physics 103 (1), 2008 | 142 | 2008 |
| Evidence for hybrid surface metallic band in (4× 4) silicene on Ag (111) D Tsoutsou, E Xenogiannopoulou, E Golias, P Tsipas, A Dimoulas Applied Physics Letters 103 (23), 2013 | 139 | 2013 |
| Structural and electrical quality of the high-k dielectric on Si (001): Dependence on growth parameters A Dimoulas, G Vellianitis, A Travlos, V Ioannou-Sougleridis, ... Journal of Applied Physics 92 (1), 426-431, 2002 | 136 | 2002 |
| Modeling of negatively charged states at the Ge surface and interfaces P Tsipas, A Dimoulas Applied Physics Letters 94 (1), 2009 | 130 | 2009 |
| Advanced gate stacks for high-mobility semiconductors A Dimoulas, E Gusev, M Heyns, PC McIntyre Springer 27, 229, 2007 | 124 | 2007 |
| Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures KE Aretouli, D Tsoutsou, P Tsipas, J Marquez-Velasco, ... ACS applied materials & interfaces 8 (35), 23222-23229, 2016 | 119 | 2016 |
| Strain-induced changes to the electronic structure of germanium H Tahini, A Chroneos, RW Grimes, U Schwingenschlögl, A Dimoulas Journal of Physics: Condensed Matter 24 (19), 195802, 2012 | 117 | 2012 |
| Inorganic–organic core–shell titania nanoparticles for efficient visible light activated photocatalysis NG Moustakas, AG Kontos, V Likodimos, F Katsaros, N Boukos, ... Applied Catalysis B: Environmental 130, 14-24, 2013 | 116 | 2013 |
| Massless Dirac Fermions in ZrTe2 Semimetal Grown on InAs(111) by van der Waals Epitaxy P Tsipas, D Tsoutsou, S Fragkos, R Sant, C Alvarez, H Okuno, G Renaud, ... ACS nano 12 (2), 1696-1703, 2018 | 114 | 2018 |
| Strain dependence of band gaps and exciton energies in pure and mixed transition-metal dichalcogenides RK Defo, S Fang, SN Shirodkar, GA Tritsaris, A Dimoulas, E Kaxiras Physical Review B 94 (15), 155310, 2016 | 110 | 2016 |
| Silicene and germanene: Silicon and germanium in the “flatland” A Dimoulas Microelectronic engineering 131, 68-78, 2015 | 106 | 2015 |
| Interface engineering for Ge metal-oxide–semiconductor devices A Dimoulas, DP Brunco, S Ferrari, JW Seo, Y Panayiotatos, ... Thin Solid Films 515 (16), 6337-6343, 2007 | 106 | 2007 |
| 2D materials for nanoelectronics M Houssa, A Dimoulas, A Molle CRC press, 2016 | 95 | 2016 |
