| High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts HJ Chuang, X Tan, NJ Ghimire, MM Perera, B Chamlagain, MMC Cheng, ... Nano letters 14 (6), 3594-3601, 2014 | 533 | 2014 |
| Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors HJ Chuang, B Chamlagain, M Koehler, MM Perera, J Yan, D Mandrus, ... Nano letters 16 (3), 1896-1902, 2016 | 457 | 2016 |
| Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating MM Perera, MW Lin, HJ Chuang, BP Chamlagain, C Wang, X Tan, ... ACS nano 7 (5), 4449-4458, 2013 | 404 | 2013 |
| Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate B Chamlagain, Q Li, NJ Ghimire, HJ Chuang, MM Perera, H Tu, Y Xu, ... ACS nano 8 (5), 5079-5088, 2014 | 240 | 2014 |
| Rectification in Nanoscale Devices Based on an Asymmetric Five-Coordinate Iron (III) Phenolate Complex. LD Wickramasinghe, MM Perera, L Li, G Mao, Z Zhou, CN Verani Angewandte Chemie 125 (50), 2013 | 42 | 2013 |
| The Mechanisms of Rectification in Au| Molecule| Au Devices Based on Langmuir–Blodgett Monolayers of Iron (III) and Copper (II) Surfactants LD Wickramasinghe, S Mazumder, S Gonawala, MM Perera, H Baydoun, ... Angewandte Chemie International Edition 53 (52), 14462-14467, 2014 | 36 | 2014 |
| The Mechanisms of Rectification in Au vertical bar Molecule vertical bar Au Devices Based on Langmuir-Blodgett Monolayers of Iron (III) and Copper (II) Surfactants LD Wickramasinghe, S Mazumder, S Gonawala, MM Perera, H Baydoun, ... ANGEWANDTE CHEMIE-INTERNATIONAL EDITION 53 (52), 14462-14467, 2014 | 1 | 2014 |
| Effects of residual stress on MEMS direction-finding sound sensors M Perera, R Rabelo, F Alves, G Karunasiri Bulletin of the American Physical Society 65, 2020 | | 2020 |
| High-Performance WSe, MoS, and MoSe Transistors Enabled by a New Contact Strategy HJ Chuang, B Chamlagain, M Koehler, MM Perera, J Yan, D Mandrus, ... Bulletin of the American Physical Society 61, 2016 | | 2016 |
| Optimization of transition-metal dichalcogenides based field-effecttransistors via contact engineering MM Perera Wayne State University, 2016 | | 2016 |
| High-Performance WSe2, MoS2, and MoSe2 Transistors Enabled by a New Contact Strategy HJ Chuang, B Chamlagain, M Koehler, MM Perera, J Yan, D Mandrus, ... APS March Meeting Abstracts 2016, C26. 008, 2016 | | 2016 |
| Substrate dependence of Hall and Field-effect mobilities in few-layer MoS2 field-effect transistors B Chamlagain, M Perera, HJ Chuang, A Bowman, U Rijal, K Andrews, ... APS March Meeting Abstracts 2016, E15. 009, 2016 | | 2016 |
| The Effect of Substrate on the Electron Transport Properties of MoS2 Field-Effect Transistors B Chamlagain, HJ Chuang, MM Perera, Z Zhou APS March Meeting Abstracts 2015, B2. 011, 2015 | | 2015 |
| Improved Performance in MoS2 Field-Effect Transistors Contacted by Highly Doped Graphene Electrodes and Passivated by Hexagonal Boron Nitride M Perera, HJ Chuang, Z Zhou APS March Meeting Abstracts 2015, B2. 001, 2015 | | 2015 |
| A comparison of MoSe2 field-effect transistors on SiO2 and parylene-C substrates: possible surface polar phonon effects B Chamlagain, Q Li, M Pan, T Hong, HJ Chuang, M Perera, Y Xu, D Xaio, ... APS March Meeting Abstracts 2014, Y51. 008, 2014 | | 2014 |
| Comparison on the rectifying behavior of LB-films of metallosurfactants in nanodevices L Wickramasinghe, MM Perera, Z Zhou, CN Verani ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY 246, 2013 | | 2013 |
| Isolation of pentacoordinate iron (III) and manganese (III) complexes for nano-scale devices LD Wickramasinghe, MM Perera, L Li, G Mao, Z Zhou, CN Verani Abstracts of Papers of the American Chemical Society 246, 2013 | | 2013 |
| Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating M Madusanka Perera, MW Lin, HJ Chuang, B Prasad Chamlagain, ... arXiv e-prints, arXiv: 1304.4669, 2013 | | 2013 |
| Ionic-Liquid Gated Few-layer MoS2 Field-Effect Transistors M Perera, MW Lin, HJ Chuang, B Chamlagain, C Wang, X Tan, ... APS March Meeting Abstracts 2013, T23. 004, 2013 | | 2013 |
| Ionic-Liquid Gated Bilayer MoS Field-Effect Transistors MM Perera, HJ Chuang, MW Lin, B Chamlagain, X Tan, MMC Cheng, ... Bulletin of the American Physical Society 57, 2012 | | 2012 |
Bhim Chamlagain PhDLam Research, University of Central Florida (NSTC); Wayne State UniversityVerified email at wayne.edu
