Variability of electron and hole spin qubits due to interface roughness and charge traps B Martinez, YM Niquet Physical Review Applied 17 (2), 024022, 2022 | 28 | 2022 |
Hole-spin driving by strain-induced spin-orbit interactions JC Abadillo-Uriel, EA Rodríguez-Mena, B Martinez, YM Niquet Physical Review Letters 131 (9), 097002, 2023 | 27 | 2023 |
Two-body Wigner molecularization in asymmetric quantum dot spin qubits JC Abadillo-Uriel, B Martinez, M Filippone, YM Niquet Physical Review B 104 (19), 195305, 2021 | 27 | 2021 |
Hole spin manipulation in inhomogeneous and nonseparable electric fields B Martinez, JC Abadillo-Uriel, EA Rodríguez-Mena, YM Niquet Physical Review B 106 (23), 235426, 2022 | 20 | 2022 |
Robustness of surface activity electronic structure-based descriptors of transition metals L Vega, B Martínez, F Vines, F Illas Physical Chemistry Chemical Physics 20 (31), 20548-20554, 2018 | 20 | 2018 |
A new FDSOI spin qubit platform with 40nm effective control pitch T Bédécarrats, BC Paz, BM Diaz, H Niebojewski, B Bertrand, N Rambal, ... 2021 IEEE International Electron Devices Meeting (IEDM), 1-4, 2021 | 16 | 2021 |
Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits EA Rodríguez-Mena, JC Abadillo-Uriel, G Veste, B Martinez, J Li, ... Physical Review B 108 (20), 205416, 2023 | 12 | 2023 |
Towards understanding the role of carbon atoms on transition metal surfaces: implications for catalysis B Martínez, O Piqué, H Prats, F Vines, F Illas Applied Surface Science 513, 145765, 2020 | 9 | 2020 |
Challenges and perspectives in the modeling of spin qubits YM Niquet, L Hutin, BM Diaz, B Venitucci, J Li, V Michal, ... 2020 IEEE International Electron Devices Meeting (IEDM), 30.1. 1-30.1. 4, 2020 | 7 | 2020 |
Electrical manipulation of a single electron spin in CMOS using a micromagnet and spin-valley coupling B Klemt, V Elhomsy, M Nurizzo, P Hamonic, B Martinez, B Cardoso Paz, ... npj Quantum Information 9 (1), 107, 2023 | 6 | 2023 |
Mo single atoms in the Cu (111) surface as improved catalytic active centers for deoxygenation reactions B Martinez, F Vines, PH McBreen, F Illas Catalysis Science & Technology 11 (14), 4969-4978, 2021 | 5 | 2021 |
Material and integration challenges for large scale Si quantum computing M Vinet, T Bédécarrats, BC Paz, B Martinez, E Chanrion, E Catapano, ... 2021 IEEE International Electron Devices Meeting (IEDM), 14.2. 1-14.2. 4, 2021 | 4 | 2021 |
Insights on alkylidene formation on Mo2C: A potential overlap between direct deoxygenation and olefin metathesis B Martinez, F Vines, PH McBreen, F Illas Journal of Catalysis 393, 381-389, 2021 | 3 | 2021 |
Variability mitigation in epitaxial-heterostructure-based spin qubit devices via gate layout optimization B Martinez, S de Franceschi, YM Niquet arXiv preprint arXiv:2402.18991, 2024 | 2 | 2024 |
Tunnel and capacitive coupling optimization in FDSOI spin-qubit devices B Bertrand, B Martinez, J Li, BC Paz, V Millory, V Labracherie, L Brevard, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 2 | 2023 |
Methodology for an efficient characterization flow of industrial grade Si-based qubit devices LC Contamin, BC Paz, BM Diaz, B Bertrand, H Niebojewski, ... 2022 International Electron Devices Meeting (IEDM), 22.1. 1-22.1. 4, 2022 | 2 | 2022 |
Strain engineering in Ge/GeSi spin qubits heterostructures L Mauro, EA Rodríguez-Mena, B Martinez, YM Niquet arXiv preprint arXiv:2407.19854, 2024 | 1 | 2024 |
Towards Scalable Si and Ge Spin Qubit Architectures: Highlights from Modelling BM Diaz Université Grenoble Alpes [2020-....], 2022 | 1 | 2022 |
DEVICE WITH TWO SUPERPOSED ELECTROSTATIC CONTROL GATE LEVELS B Bertrand, B Martinez i Diaz, YM Niquet, M Vinet US Patent 17,654,181, 2022 | 1 | 2022 |
Combining multiplexed gate-based readout and isolated CMOS quantum dot arrays P Hamonic, M Nurizzo, J Nath, MC Dartiailh, V El-Homsy, M Fragnol, ... arXiv preprint arXiv:2410.02325, 2024 | | 2024 |