| High Performance Multilayer MoS2 Transistors with Scandium Contacts S Das, HY Chen, AV Penumatcha, J Appenzeller Nano letters 13 (1), 100-105, 2013 | 2769 | 2013 |
| Carbon nanotubes as Schottky barrier transistors S Heinze, J Tersoff, R Martel, V Derycke, J Appenzeller, P Avouris Physical review letters 89 (10), 106801, 2002 | 1697 | 2002 |
| Carbon nanotube inter-and intramolecular logic gates V Derycke, R Martel, J Appenzeller, P Avouris Nano letters 1 (9), 453-456, 2001 | 1675 | 2001 |
| Band-to-band tunneling in carbon nanotube field-effect transistors J Appenzeller, YM Lin, J Knoch, P Avouris Physical review letters 93 (19), 196805, 2004 | 1110 | 2004 |
| Ambipolar electrical transport in semiconducting single-wall carbon nanotubes R Martel, V Derycke, C Lavoie, J Appenzeller, KK Chan, J Tersoff, ... Physical review letters 87 (25), 256805, 2001 | 1072 | 2001 |
| Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes SJ Wind, J Appenzeller, R Martel, V Derycke, P Avouris Applied Physics Letters 80 (20), 3817-3819, 2002 | 1033 | 2002 |
| Carbon nanotube electronics P Avouris, J Appenzeller, R Martel, SJ Wind Proceedings of the IEEE 91 (11), 1772-1784, 2003 | 1019 | 2003 |
| Controlling doping and carrier injection in carbon nanotube transistors V Derycke, R Martel, J Appenzeller, P Avouris Applied Physics Letters 80 (15), 2773-2775, 2002 | 942 | 2002 |
| The role of metal− nanotube contact in the performance of carbon nanotube field-effect transistors Z Chen, J Appenzeller, J Knoch, Y Lin, P Avouris Nano letters 5 (7), 1497-1502, 2005 | 884 | 2005 |
| An integrated logic circuit assembled on a single carbon nanotube Z Chen, J Appenzeller, YM Lin, J Sippel-Oakley, AG Rinzler, J Tang, ... Science 311 (5768), 1735-1735, 2006 | 728 | 2006 |
| Field-modulated carrier transport in carbon nanotube transistors J Appenzeller, J Knoch, V Derycke, R Martel, S Wind, P Avouris Physical Review Letters 89 (12), 126801, 2002 | 633 | 2002 |
| High-performance carbon nanotube field-effect transistor with tunable polarities YM Lin, J Appenzeller, J Knoch, P Avouris IEEE transactions on nanotechnology 4 (5), 481-489, 2005 | 616 | 2005 |
| Transistors based on two-dimensional materials for future integrated circuits S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ... Nature Electronics 4 (11), 786-799, 2021 | 590 | 2021 |
| WSe2 field effect transistors with enhanced ambipolar characteristics S Das, J Appenzeller Applied physics letters 103 (10), 2013 | 489 | 2013 |
| Toward nanowire electronics J Appenzeller, J Knoch, MT Bjork, H Riel, H Schmid, W Riess IEEE Transactions on electron devices 55 (11), 2827-2845, 2008 | 472 | 2008 |
| Carbon nanotubes for high-performance electronics—Progress and prospect J Appenzeller Proceedings of the IEEE 96 (2), 201-211, 2008 | 469 | 2008 |
| Comparing carbon nanotube transistors-the ideal choice: a novel tunneling device design J Appenzeller, YM Lin, J Knoch, Z Chen, P Avouris IEEE Transactions on Electron Devices 52 (12), 2568-2576, 2005 | 446 | 2005 |
| Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure A Azcatl, X Qin, A Prakash, C Zhang, L Cheng, Q Wang, N Lu, MJ Kim, ... Nano letters 16 (9), 5437-5443, 2016 | 420 | 2016 |
| Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories F Zhang, H Zhang, S Krylyuk, CA Milligan, Y Zhu, DY Zemlyanov, ... Nature materials 18 (1), 55-61, 2019 | 416 | 2019 |
| Tunneling versus thermionic emission in one-dimensional semiconductors J Appenzeller, M Radosavljević, J Knoch, P Avouris Physical review letters 92 (4), 048301, 2004 | 383 | 2004 |
Joachim KnochProfessor of Electrical Engineering, RWTH Aachen UniversityVerified email at iht.rwth-aachen.de
