| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 626 | 2019 |
| Long-lived direct and indirect interlayer excitons in van der Waals heterostructures B Miller, A Steinhoff, B Pano, J Klein, F Jahnke, A Holleitner, ... Nano letters 17 (9), 5229-5237, 2017 | 407 | 2017 |
| Photocatalytic Stability of Single- and Few-Layer MoS2 E Parzinger, B Miller, B Blaschke, JA Garrido, JW Ager, A Holleitner, ... ACS nano 9 (11), 11302-11309, 2015 | 243 | 2015 |
| Site-selectively generated photon emitters in monolayer MoS2 via local helium ion irradiation J Klein, M Lorke, M Florian, F Sigger, L Sigl, S Rey, J Wierzbowski, ... Nature communications 10 (1), 2755, 2019 | 201 | 2019 |
| Direct exciton emission from atomically thin transition metal dichalcogenide heterostructures near the lifetime limit J Wierzbowski, J Klein, F Sigger, C Straubinger, M Kremser, T Taniguchi, ... Scientific reports 7 (1), 12383, 2017 | 195 | 2017 |
| Electrical spin injection and detection in lateral all-semiconductor devices M Ciorga, A Einwanger, U Wurstbauer, D Schuh, W Wegscheider, ... Physical Review B—Condensed Matter and Materials Physics 79 (16), 165321, 2009 | 185 | 2009 |
| Morphology and flexibility of graphene and few-layer graphene on various substrates U Stöberl, U Wurstbauer, W Wegscheider, D Weiss, J Eroms Applied Physics Letters 93 (5), 2008 | 171 | 2008 |
| Imaging ellipsometry of graphene U Wurstbauer, C Röling, U Wurstbauer, W Wegscheider, M Vaupel, ... Applied Physics Letters 97 (23), 2010 | 141 | 2010 |
| Light–matter interaction in transition metal dichalcogenides and their heterostructures U Wurstbauer, B Miller, E Parzinger, AW Holleitner Journal of Physics D: Applied Physics 50 (17), 173001, 2017 | 131 | 2017 |
| Imaging spectroscopic ellipsometry of MoS2 S Funke, B Miller, E Parzinger, P Thiesen, AW Holleitner, U Wurstbauer Journal of Physics: Condensed Matter 28 (38), 385301, 2016 | 122 | 2016 |
| Evidence for a Magnetic Proximity Effect up to Room Temperature at Interfaces F Maccherozzi, M Sperl, G Panaccione, J Minár, S Polesya, H Ebert, ... Physical review letters 101 (26), 267201, 2008 | 116 | 2008 |
| Photogating of mono-and few-layer MoS2 B Miller, E Parzinger, A Vernickel, AW Holleitner, U Wurstbauer Applied Physics Letters 106 (12), 2015 | 110 | 2015 |
| Graphene and beyond: recent advances in two-dimensional materials synthesis, properties, and devices Y Lei, T Zhang, YC Lin, T Granzier-Nakajima, G Bepete, DA Kowalczyk, ... ACS Nanoscience Au 2 (6), 450-485, 2022 | 92 | 2022 |
| Tuning the Fröhlich exciton-phonon scattering in monolayer MoS2 B Miller, J Lindlau, M Bommert, A Neumann, H Yamaguchi, A Holleitner, ... Nature communications 10 (1), 807, 2019 | 82 | 2019 |
| Atomistic defects as single-photon emitters in atomically thin MoS2 K Barthelmi, J Klein, A Hötger, L Sigl, F Sigger, E Mitterreiter, S Rey, ... Applied Physics Letters 117 (7), 2020 | 78 | 2020 |
| Weak localization in ferromagnetic (Ga, Mn) As nanostructures D Neumaier, K Wagner, S Geißler, U Wurstbauer, J Sadowski, ... Physical review letters 99 (11), 116803, 2007 | 76 | 2007 |
| Atomistic Positioning of Defects in Helium Ion Treated Single-Layer MoS2 E Mitterreiter, B Schuler, KA Cochrane, U Wurstbauer, A Weber-Bargioni, ... Nano letters 20 (6), 4437-4444, 2020 | 70 | 2020 |
| Engineering the Luminescence and Generation of Individual Defect Emitters in Atomically Thin MoS2 J Klein, L Sigl, S Gyger, K Barthelmi, M Florian, S Rey, T Taniguchi, ... ACS Photonics 8 (2), 669-677, 2021 | 69 | 2021 |
| Robust valley polarization of helium ion modified atomically thin MoS2 J Klein, A Kuc, A Nolinder, M Altzschner, J Wierzbowski, F Sigger, ... 2D Materials 5 (1), 011007, 2017 | 68 | 2017 |
| Tunable quantum confinement in ultrathin, optically active semiconductor nanowires via reverse-reaction growth. B Loitsch, D Rudolph, S Morkötter, M Döblinger, G Grimaldi, L Hanschke, ... Advanced Materials (Deerfield Beach, Fla.) 27 (13), 2195-2202, 2015 | 68 | 2015 |
