Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature JF Wang, FF Yan, Q Li, ZH Liu, H Liu, GP Guo, LP Guo, X Zhou, JM Cui, ... Physical review letters 124 (22), 223601, 2020 | 158 | 2020 |
Bright room temperature single photon source at telecom range in cubic silicon carbide J Wang, Y Zhou, Z Wang, A Rasmita, J Yang, X Li, HJ von Bardeleben, ... Nature communications 9 (1), 4106, 2018 | 150 | 2018 |
High-sensitivity temperature sensing using an implanted single nitrogen-vacancy center array in diamond J Wang, F Feng, J Zhang, J Chen, Z Zheng, L Guo, W Zhang, X Song, ... Physical Review B 91 (15), 155404, 2015 | 127 | 2015 |
Efficient generation of an array of single silicon-vacancy defects in silicon carbide J Wang, Y Zhou, X Zhang, F Liu, Y Li, K Li, Z Liu, G Wang, W Gao Physical Review Applied 7 (6), 064021, 2017 | 114 | 2017 |
Room-temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast Q Li, JF Wang, FF Yan, JY Zhou, HF Wang, H Liu, LP Guo, X Zhou, A Gali, ... National Science Review 9 (5), nwab122, 2022 | 81 | 2022 |
Temperature-dependent energy-level shifts of spin defects in hexagonal boron nitride W Liu, ZP Li, YZ Yang, S Yu, Y Meng, ZA Wang, ZC Li, NJ Guo, FF Yan, ... ACS Photonics 8 (7), 1889-1895, 2021 | 81 | 2021 |
On-demand generation of single silicon vacancy defects in silicon carbide JF Wang, Q Li, FF Yan, H Liu, GP Guo, WP Zhang, X Zhou, LP Guo, ... Acs Photonics 6 (7), 1736-1743, 2019 | 78 | 2019 |
Generation of spin defects by ion implantation in hexagonal boron nitride NJ Guo, W Liu, ZP Li, YZ Yang, S Yu, Y Meng, ZA Wang, XD Zeng, FF Yan, ... ACS omega 7 (2), 1733-1739, 2022 | 76 | 2022 |
Scalable fabrication of single silicon vacancy defect arrays in silicon carbide using focused ion beam J Wang, X Zhang, Y Zhou, K Li, Z Wang, P Peddibhotla, F Liu, ... Acs Photonics 4 (5), 1054-1059, 2017 | 73 | 2017 |
Fiber-integrated diamond-based magnetometer X Liu, J Cui, F Sun, X Song, F Feng, J Wang, W Zhu, L Lou, G Wang Applied Physics Letters 103 (14), 2013 | 67 | 2013 |
Self-protected thermometry with infrared photons and defect spins in silicon carbide Y Zhou, J Wang, X Zhang, K Li, J Cai, W Gao Physical Review Applied 8 (4), 044015, 2017 | 58 | 2017 |
Coherent control of defect spins in silicon carbide above 550 K FF Yan, JF Wang, Q Li, ZD Cheng, JM Cui, WZ Liu, JS Xu, CF Li, GC Guo Physical Review Applied 10 (4), 044042, 2018 | 54 | 2018 |
Coherent control of an ultrabright single spin in hexagonal boron nitride at room temperature NJ Guo, S Li, W Liu, YZ Yang, XD Zeng, S Yu, Y Meng, ZP Li, ZA Wang, ... Nature Communications 14 (1), 2893, 2023 | 49 | 2023 |
Experimental simulation of anti-parity-time symmetric Lorentz dynamics Q Li, CJ Zhang, ZD Cheng, WZ Liu, JF Wang, FF Yan, ZH Lin, Y Xiao, ... Optica 6 (1), 67-71, 2019 | 48 | 2019 |
Coherent dynamics of multi-spin VB- center in hexagonal boron nitride W Liu, V Ivády, ZP Li, YZ Yang, S Yu, Y Meng, ZA Wang, NJ Guo, FF Yan, ... Nature communications 13 (1), 1-8, 2022 | 46 | 2022 |
Coherence times of precise depth controlled NV centers in diamond J Wang, W Zhang, J Zhang, J You, Y Li, G Guo, F Feng, X Song, L Lou, ... Nanoscale 8 (10), 5780-5785, 2016 | 45 | 2016 |
Experimental optical properties of single nitrogen vacancy centers in silicon carbide at room temperature JF Wang, ZH Liu, FF Yan, Q Li, XG Yang, L Guo, X Zhou, W Huang, JS Xu, ... Acs Photonics 7 (7), 1611-1616, 2020 | 35 | 2020 |
Energy transfer from a single nitrogen-vacancy center in nanodiamond to a graphene monolayer X Liu, G Wang, X Song, F Feng, W Zhu, L Lou, J Wang, H Wang, P Bao Applied Physics Letters 101 (23), 2012 | 35 | 2012 |
Magnetic detection under high pressures using designed silicon vacancy centres in silicon carbide JF Wang, L Liu, XD Liu, Q Li, JM Cui, DF Zhou, JY Zhou, Y Wei, HA Xu, ... Nature Materials 22 (4), 489-494, 2023 | 34 | 2023 |
Generation of nitrogen-vacancy color center in nanodiamonds by high temperature annealing X Song, G Wang, X Liu, F Feng, J Wang, L Lou, W Zhu Applied Physics Letters 102 (13), 2013 | 32 | 2013 |