Markus Weyers

Markus Weyers

Dept. Head Materials Technology, Ferdinand-Braun-Institut
Verified email at fbh-berlin.de
Cited by 15493
AlGaN MOVPE GaAs VCSELs
zhancang wang

zhancang wang

Ericsson
Verified email at ericsson.com
Cited by 11229
RF RFIC CMOS GaN GaAs
RP Schneider

RP Schneider

Google or Raxium or Sandia or Infinera or Agilent or Hewlett Packard or HP or Northwestern
Verified email at google.com
Cited by 10551
Compound Semiconductor Materials and … InP GaAs)
Pierre Lefebvre

Pierre Lefebvre

Directeur de Recherche CNRS. Physics. Laboratoire Charles Coulomb (L2C), Université de …
Verified email at umontpellier.fr
Cited by 7187
Excitons Nano GaN ZnO GaAs
Geoff Gardner

Geoff Gardner

Microsoft Research & Purdue University
Verified email at purdue.edu
Cited by 6907
MBE growth materials for quantum computing GaAs InAs 2DEG
Subhananda (Subho) Chakrabarti

Subhananda (Subho) Chakrabarti

Professor, Indian Institute of Technology Bombay
Verified email at ee.iitb.ac.in
Cited by 5457
Materials Semiconductors GaAs InAs ZnO
Haiqun Zheng, H.Q. Zheng, Zheng H. Q.

Haiqun Zheng, HQ Zheng, Zheng HQ

Nanyang Technological University
Cited by 1427
Semiconductors MBE GaAs AlGaAs InP
Servin Rathi

Servin Rathi

Research Fellow
Verified email at ucl.ac.uk
Cited by 1219
2D Transport GaAs Graphene … Vanadium dioxide thin-films and nanowires HEMTs Modeling- Fab.-Me
Nikolay Ledentsov Jr.

Nikolay Ledentsov Jr.

Head of Characterization, EPIGAP OSA GmbH
Verified email at vi-systems.com
Cited by 1183
VCSEL LED GaN GaAs Optoelectronics
Riyaz Abdul Khadar

Riyaz Abdul Khadar

R&D Engineer, Coherent Corp.
Verified email at II-VI.com
Cited by 907
Semiconductor device physics High power devices GaN High power lasers GaAs
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