| Detachable substrate or detachable structure and method for the production thereof B Aspar, H Moriceau, M Zussy, O Rayssac US Patent 7,713,369, 2010 | 99 | 2010 |
| Accurate control of the misorientation angles in direct wafer bonding F Fournel, H Moriceau, B Aspar, K Rousseau, J Eymery, JL Rouviere, ... Applied physics letters 80 (5), 793-795, 2002 | 94 | 2002 |
| Embrittled substrate and method for making same B Aspar, C Lagahe, O Rayssac, B Ghyselen US Patent 7,498,245, 2009 | 90 | 2009 |
| Detachable substrate with controlled mechanical strength and method of producing same B Aspar, H Moriceau, O Rayssac, B Ghyselen US Patent 7,902,038, 2011 | 88 | 2011 |
| Smart-Cut (R) process using metallic bonding: Application to transfer of Si, GaAs, InP thin films B Aspar, E Jalaguier, A Mas, C Locatelli, O Rayssac, H Moriceau, S Pocas, ... Electronics letters 35 (12), 1024-1025, 1999 | 78 | 1999 |
| High-energy x-ray reflectivity of buried interfaces created by wafer bonding F Rieutord, J Eymery, F Fournel, D Buttard, R Oeser, O Plantevin, ... Physical Review B 63 (12), 125408, 2001 | 74 | 2001 |
| Performance of SOI devices transferred onto passivated HR SOI substrates using a layer transfer technique D Lederer, B Aspar, C Laghae-Blanchard, J Raskin 2006 IEEE international SOI Conferencee Proceedings, 29-30, 2006 | 73 | 2006 |
| Selective transfer of elements from one support to another support B Aspar, H Moriceau, O Rayssac US Patent 6,204,079, 2001 | 72 | 2001 |
| InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6/spl mu/m C Seassal, P Rojo-Romeo, X Letartre, P Viktorovitch, G Hollinger, ... Electronics Letters 37 (4), 222-223, 2001 | 67* | 2001 |
| Two-dimensional hexagonal-shaped microcavities formed in a two-dimensional photonic crystal on an InP membrane C Monat, C Seassal, X Letartre, P Regreny, M Gendry, PR Romeo, ... Journal of applied Physics 93 (1), 23-31, 2003 | 64 | 2003 |
| High-frequency surface acoustic waves excited on thin-oriented LiNbO/sub 3/single-crystal layers transferred onto silicon T Pastureaud, M Solal, B Biasse, B Aspar, JB Briot, W Daniau, W Steichen, ... IEEE transactions on ultrasonics, ferroelectrics, and frequency control 54 …, 2007 | 63 | 2007 |
| InP dies transferred onto silicon substrate for optical interconnects application M Kostrzewa, L Di Cioccio, M Zussy, JC Roussin, JM Fedeli, N Kernevez, ... Sensors and Actuators A: Physical 125 (2), 411-414, 2006 | 56 | 2006 |
| Heat treatment method for semiconductor substrates C Maleville, T Barge, B Aspar, H Moriceau, AJ Auberton-Herve US Patent 6,403,450, 2002 | 52 | 2002 |
| Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structures J Macıa, E Martın, A Pérez-Rodrıguez, J Jimenez, JR Morante, B Aspar, ... Journal of applied physics 82 (8), 3730-3735, 1997 | 51 | 1997 |
| Multilayer structure with controlled internal stresses and making same H Moriceau, O Rayssac, AM Cartier, B Aspar US Patent 6,756,285, 2004 | 50 | 2004 |
| Method for obtaining a thin film in particular semiconductor, comprising a protected ion zone and involving an ion implantation M Bruel, B Aspar US Patent 6,316,333, 2001 | 50 | 2001 |
| Smart-Cut (R): the basic fabrication process for unibond (R) SOI wafers AJ Auberton-Herve, M Bruel, B Aspar, C Maleville, H Moriceau IEICE Transactions on Electronics 80 (3), 358-363, 1997 | 46 | 1997 |
| Ultra thin silicon films directly bonded onto silicon wafers F Fournel, H Moriceau, N Magnea, J Eymery, JL Rouvière, K Rousseau, ... Materials Science and Engineering: B 73 (1-3), 42-46, 2000 | 43 | 2000 |
| Silicon on insulator obtained by high dose oxygen implantation, microstructure, and formation mechanism J Stoemenos, A Garcia, B Aspar, J Margail Journal of the Electrochemical Society 142 (4), 1248, 1995 | 40 | 1995 |
| Method for preparing and assembling substrates B Aspar, C Lagahe-Blanchard US Patent App. 10/574,798, 2007 | 39 | 2007 |
