| High Performance Multilayer MoS2 Transistors with Scandium Contacts S Das, HY Chen, AV Penumatcha, J Appenzeller Nano letters 13 (1), 100-105, 2013 | 2770 | 2013 |
| Transistors based on two-dimensional materials for future integrated circuits S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ... Nature Electronics 4 (11), 786-799, 2021 | 592 | 2021 |
| Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model AV Penumatcha, RB Salazar, J Appenzeller Nature communications 6 (1), 8948, 2015 | 194 | 2015 |
| Strain engineering for transition metal dichalcogenides based field effect transistors T Shen, AV Penumatcha, J Appenzeller ACS nano 10 (4), 4712-4718, 2016 | 157 | 2016 |
| Advancing 2D monolayer CMOS through contact, channel and interface engineering KP O'Brien, CJ Dorow, A Penumatcha, K Maxey, S Lee, CH Naylor, ... 2021 IEEE International Electron Devices Meeting (IEDM), 7.1. 1-7.1. 4, 2021 | 85 | 2021 |
| Spin transfer torque in a graphene lateral spin valve assisted by an external magnetic field CC Lin, AV Penumatcha, Y Gao, VQ Diep, J Appenzeller, Z Chen Nano letters 13 (11), 5177-5181, 2013 | 69 | 2013 |
| 3d-ferroelectric random access memory (3d-fram) S Shivaraman, SC Chang, AV Penumatcha, N Haratipour, UE Avci US Patent App. 16/599,422, 2021 | 67 | 2021 |
| The Origins and Characteristics of the Threshold Voltage Variability of Quasi-Ballistic Single-Walled Carbon Nanotube Field-Effect Transistors Q Cao, SJ Han, AV Penumatcha, MM Frank, GS Tulevski, J Tersoff, ... ACS nano, 2015 | 63 | 2015 |
| Advancing monolayer 2-D nMOS and pMOS transistor integration from growth to van der Waals interface engineering for ultimate CMOS scaling C Dorow, K O’Brien, CH Naylor, S Lee, A Penumatcha, A Hsiao, T Tronic, ... IEEE Transactions on Electron Devices 68 (12), 6592-6598, 2021 | 62 | 2021 |
| Limitations of the High-Low C-V Technique for MOS Interfaces With Large Time Constant Dispersion AV Penumatcha, S Swandono, JA Cooper IEEE transactions on electron devices 60 (3), 923-926, 2013 | 60 | 2013 |
| Process integration and future outlook of 2D transistors KP O’Brien, CH Naylor, C Dorow, K Maxey, AV Penumatcha, A Vyatskikh, ... nature communications 14 (1), 6400, 2023 | 41 | 2023 |
| Improvement of spin transfer torque in asymmetric graphene devices CC Lin, Y Gao, AV Penumatcha, VQ Diep, J Appenzeller, Z Chen ACS nano 8 (4), 3807-3812, 2014 | 33 | 2014 |
| Scaling of device variability and subthreshold swing in ballistic carbon nanotube transistors Q Cao, J Tersoff, SJ Han, AV Penumatcha Physical Review Applied 4 (2), 024022, 2015 | 25 | 2015 |
| Gate length scaling beyond Si: mono-layer 2D channel FETs robust to short channel effects CJ Dorow, A Penumatcha, A Kitamura, C Rogan, KP O’Brien, S Lee, ... 2022 International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2022 | 21 | 2022 |
| 300 mm MOCVD 2D CMOS materials for more (than) Moore scaling K Maxey, CH Naylor, KP O'Brien, A Penumatcha, A Oni, C Mokhtarzadeh, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 18 | 2022 |
| Spin-orbit torque based magnetization switching in Pt/Cu/[Co/Ni] 5 multilayer structures V Ostwal, A Penumatcha, YM Hung, AD Kent, J Appenzeller Journal of Applied Physics 122 (21), 2017 | 12 | 2017 |
| Relaxor ferroelectric capacitors and methods of fabrication SC Chang, CC Lin, N Haratipour, T Gosavi, IC Tung, SH Sung, I Young, ... US Patent 11,316,027, 2022 | 10 | 2022 |
| 2D materials in the BEOL CH Naylor, K Maxey, C Jezewski, KP O’Brien, AV Penumatcha, MS Kavrik, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 9 | 2023 |
| Spin-torque switching of a nano-magnet using giant spin hall effect AV Penumatcha, SR Das, Z Chen, J Appenzeller AIP Advances 5 (10), 2015 | 9 | 2015 |
| Capacitors with ferroelectric/antiferroelectric and dielectric materials SC Chang, CC Lin, AV Penumatcha, UE Avci, IA Young US Patent App. 16/296,035, 2020 | 8 | 2020 |
Chia-Ching LINComponents Research, Intel Corp.Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα intel.com
