| Fabrication of tapered, conical-shaped titania nanotubes GK Mor, OK Varghese, M Paulose, N Mukherjee, CA Grimes Journal of Materials Research 18, 2588-2593, 2003 | 719 | 2003 |
| Methods of forming nickel sulfide film on a semiconductor device SB Clendenning, N Mukherjee, R Pillarisetty US Patent 7,964,490, 2011 | 455 | 2011 |
| Fabrication, characterization, and physics of III–V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swing G Dewey, B Chu-Kung, J Boardman, JM Fastenau, J Kavalieros, R Kotlyar, ... 2011 International electron devices meeting, 33.6. 1-33.6. 4, 2011 | 445 | 2011 |
| Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic … M Radosavljevic, B Chu-Kung, S Corcoran, G Dewey, MK Hudait, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 278 | 2009 |
| CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture M Radosavljevic, R Pillarisetty, G Dewey, N Mukherjee, J Kavalieros, ... US Patent 9,123,567, 2015 | 211 | 2015 |
| Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to … M Radosavljevic, G Dewey, D Basu, J Boardman, B Chu-Kung, ... 2011 international electron devices meeting, 33.1. 1-33.1. 4, 2011 | 196 | 2011 |
| High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc= 0.5 V) III–V CMOS architecture R Pillarisetty, B Chu-Kung, S Corcoran, G Dewey, J Kavalieros, H Kennel, ... 2010 International Electron Devices Meeting, 6.7. 1-6.7. 4, 2010 | 172 | 2010 |
| Bioinspired synthesis of new silica structures SV Patwardhan, N Mukherjee, M Steinitz-Kannan, SJ Clarson Chemical Communications, 1122-1123, 2003 | 163 | 2003 |
| Fabrication of nanoporous tungsten oxide by galvanostatic anodization N Mukherjee, M Paulose, OK Varghese, GK Mor, CA Grimes Journal of materials research 18, 2296-2299, 2003 | 161 | 2003 |
| Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regions N Mukherjee, G Dewey, MV Metz, J Kavalieros, RS Chau US Patent 8,110,877, 2012 | 156* | 2012 |
| Conformation and assembly of polypeptide scaffolds in templating the synthesis of silica: an example of a polylysine macromolecular “switch” SV Patwardhan, R Maheshwari, N Mukherjee, KL Kiick, SJ Clarson Biomacromolecules 7 (2), 491-497, 2006 | 150 | 2006 |
| Non-planar, multi-gate InGaAs quantum well field effect transistors with high-k gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic … M Radosavljevic, G Dewey, JM Fastenau, J Kavalieros, R Kotlyar, ... 2010 International Electron Devices Meeting, 6.1. 1-6.1. 4, 2010 | 148 | 2010 |
| Transistors with high concentration of boron doped germanium AS Murthy, GA Glass, T Ghani, R Pillarisetty, N Mukherjee, JT Kavalieros, ... US Patent 8,901,537, 2014 | 147 | 2014 |
| Non-planar germanium quantum well devices R Pillarisetty, JT Kavalieros, W Rachmady, U Shah, B Chu-Kung, ... US Patent 8,283,653, 2012 | 146 | 2012 |
| Trench confined epitaxially grown device layer (s) R Pillarisetty, SH Sung, N Goel, JT Kavalieros, S Dasgupta, VH Le, ... US Patent 8,765,563, 2014 | 110 | 2014 |
| Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation S Dasgupta, HW Then, M Radosavljevic, N Mukherjee, N Goel, S Kabehie, ... US Patent 9,099,490, 2015 | 98 | 2015 |
| Effect of process parameters on the polymer mediated synthesis of silica at neutral pH SV Patwardhan, N Mukherjee, SJ Clarson Silicon Chemistry 1, 47-54, 2002 | 94 | 2002 |
| The use of poly-L-lysine to form novel silica morphologies and the role of polypeptides in biosilicification SV Patwardhan, N Mukherjee, SJ Clarson Journal of Inorganic and Organometallic Polymers 11, 193-198, 2001 | 94 | 2001 |
| High voltage field effect transistors HW Then, R Chau, B Chu-Kung, G Dewey, J Kavalieros, M Metz, ... US Patent 9,245,989, 2016 | 71 | 2016 |
| Formation of fiber-like amorphous silica structures by externally applied shear SV Patwardhan, N Mukherjee, SJ Clarson Journal of Inorganic and Organometallic Polymers 11, 117-121, 2001 | 62 | 2001 |
Marko RadosavljevicIntel CorporationΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα intel.com
