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| 300mm heterogeneous 3D integration of record performance layer transfer germanium PMOS with silicon NMOS for low power high performance logic applications W Rachmady, A Agrawal, SH Sung, G Dewey, S Chouksey, B Chu-Kung, ... 2019 IEEE International Electron Devices Meeting (IEDM), 29.7. 1-29.7. 4, 2019 | 207 | 2019 |
| Variable gate width for gate all-around transistors W Rachmady, VH Le, R Pillarisetty, JT Kavalieros, RS Chau, SH Sung US Patent 9,590,089, 2017 | 137 | 2017 |
| Trench confined epitaxially grown device layer (s) R Pillarisetty, SH Sung, N Goel, JT Kavalieros, S Dasgupta, VH Le, ... US Patent 8,765,563, 2014 | 110 | 2014 |
| Time-frequency domain reflectometry apparatus and method JB Park, YJ Shin, J Yook, EJ Powers, ES Song, JW Kim, TS Choe, ... US Patent 7,337,079, 2008 | 101 | 2008 |
| Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation S Dasgupta, HW Then, M Radosavljevic, N Mukherjee, N Goel, S Kabehie, ... US Patent 9,099,490, 2015 | 98 | 2015 |
| Plasma science and technology in the limit of the small: Microcavity plasmas and emerging applications JG Eden, SJ Park, JH Cho, MH Kim, TJ Houlahan, B Li, ES Kim, TL Kim, ... IEEE Transactions on Plasma Science 41 (4), 661-675, 2013 | 76 | 2013 |
| Experimental observation and physics of “negative” capacitance and steeper than 40mV/decade subthreshold swing in Al0.83In0.17N/AlN/GaN MOS-HEMT on … HW Then, S Dasgupta, M Radosavljevic, L Chow, B Chu-Kung, G Dewey, ... 2013 IEEE International Electron Devices Meeting, 28.3. 1-28.3. 4, 2013 | 57 | 2013 |
| Nonplanar III-N transistors with compositionally graded semiconductor channels HW Then, S Dasgupta, M Radosavljevic, B Chu-Kung, SH Sung, ... US Patent 8,896,101, 2014 | 53 | 2014 |
| III-N devices in Si trenches S Dasgupta, HW Then, SK Gardner, SH Sung, M Radosavljevic, ... US Patent 9,640,422, 2017 | 40 | 2017 |
| Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stack S Dasgupta, HW Then, M Radosavljevic, SK Gardner, SH Sung, ... US Patent 9,660,064, 2017 | 31 | 2017 |
| FeRAM using anti-ferroelectric capacitors for high-speed and high-density embedded memory SC Chang, N Haratipour, S Shivaraman, C Neumann, S Atanasov, J Peck, ... 2021 IEEE International Electron Devices Meeting (IEDM), 33.2. 1-33.2. 4, 2021 | 30 | 2021 |
| Group III-N transistors on nanoscale template structures HW Then, S Dasgupta, M Radosavljevic, B Chu-Kung, SK Gardner, ... US Patent 8,768,271, 2014 | 29 | 2014 |
| High-performance low-leakage enhancement-mode high-K dielectric GaN MOSHEMTs for energy-efficient, compact voltage regulators and RF power amplifiers for low-power mobile SoCs HW Then, LA Chow, S Dasgupta, S Gardner, M Radosavljevic, VR Rao, ... 2015 Symposium on VLSI Technology (VLSI Technology), T202-T203, 2015 | 28 | 2015 |
| Application of cross time-frequency analysis to postural sway behavior: the effects of aging and visual systems YJ Shin, D Gobert, SH Sung, EJ Powers, JB Park IEEE Transactions on Biomedical Engineering 52 (5), 859-868, 2005 | 27 | 2005 |
| Resistance and electromigration performance of 6 nm wires JS Chawla, SH Sung, SA Bojarski, CT Carver, M Chandhok, RV Chebiam, ... 2016 IEEE International Interconnect Technology Conference/Advanced …, 2016 | 26 | 2016 |
| Interchannel optical coupling within arrays of linear microplasmas generated in 25–200μm wide glass channels SH Sung, IC Hwang, SJ Park, JG Eden Applied Physics Letters 97 (23), 2010 | 25 | 2010 |
| Nanowire transistor fabrication with hardmask layers SH Sung, S Kim, K Kuhn, W Rachmady, J Kavalieros US Patent 10,121,861, 2018 | 23 | 2018 |
| Deep gate-all-around semiconductor device having germanium or group III-V active layer R Pillarisetty, W Rachmady, VH Le, SH Sung, JS Kachian, JT Kavalieros, ... US Patent 9,136,343, 2015 | 22 | 2015 |
| Nonplanar III-N transistors with compositionally graded semiconductor channels HW Then, S Dasgupta, M Radosavljevic, B Chu-Kung, SH Sung, ... US Patent 9,806,203, 2017 | 21 | 2017 |
Marko RadosavljevicIntel CorporationΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα intel.com
