Παρακολούθηση
Frédéric Teppe
Frédéric Teppe
Director of research - CNRS - Laboratoire Charles Coulomb
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα umontpellier.fr
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Παρατίθεται από
Παρατίθεται από
Έτος
Field effect transistors for terahertz detection: Physics and first imaging applications
W Knap, M Dyakonov, D Coquillat, F Teppe, N Dyakonova, J Łusakowski, ...
Journal of Infrared, Millimeter, and Terahertz Waves 30, 1319-1337, 2009
4612009
Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power
R Tauk, F Teppe, S Boubanga, D Coquillat, W Knap, YM Meziani, ...
Applied Physics Letters 89 (25), 2006
4362006
Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors
W Knap, F Teppe, Y Meziani, N Dyakonova, J Lusakowski, F Boeuf, ...
Applied Physics Letters 85 (4), 675-677, 2004
4032004
Broadband terahertz imaging with highly sensitive silicon CMOS detectors
F Schuster, D Coquillat, H Videlier, M Sakowicz, F Teppe, L Dussopt, ...
Optics express 19 (8), 7827-7832, 2011
3992011
Observation of three-dimensional massless Kane fermions in a zinc-blende crystal
M Orlita, DM Basko, MS Zholudev, F Teppe, W Knap, VI Gavrilenko, ...
Nature Physics 10 (3), 233-238, 2014
2702014
Resonant and voltage-tunable terahertz detection in InGaAs∕ InP nanometer transistors
A El Fatimy, F Teppe, N Dyakonova, W Knap, D Seliuta, G Valušis, ...
Applied physics letters 89 (13), 2006
2702006
Detection of terahertz radiation in gated two-dimensional structures governed by dc current
D Veksler, F Teppe, AP Dmitriev, VY Kachorovskii, W Knap, MS Shur
Physical Review B—Condensed Matter and Materials Physics 73 (12), 125328, 2006
2542006
Room-temperature terahertz detectors based on semiconductor nanowire field-effect transistors
MS Vitiello, D Coquillat, L Viti, D Ercolani, F Teppe, A Pitanti, F Beltram, ...
Nano letters 12 (1), 96-101, 2012
2332012
Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor
F Teppe, W Knap, D Veksler, MS Shur, AP Dmitriev, VY Kachorovskii, ...
Applied Physics Letters 87 (5), 2005
2122005
Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects
M Sakowicz, MB Lifshits, OA Klimenko, F Schuster, D Coquillat, F Teppe, ...
Journal of Applied Physics 110 (5), 2011
2062011
Magnetospectroscopy of two-dimensional HgTe-based topological insulators around the critical thickness
M Zholudev, F Teppe, M Orlita, C Consejo, J Torres, N Dyakonova, ...
Physical Review B—Condensed Matter and Materials Physics 86 (20), 205420, 2012
1552012
Terahertz detection by GaN/AlGaN transistors
A El Fatimy, SB Tombet, F Teppe, W Knap, DB Veksler, S Rumyantsev, ...
Electronics Letters 42 (23), 1342-1344, 2006
1412006
Terahertz detection and imaging using graphene ballistic rectifiers
G Auton, DB But, J Zhang, E Hill, D Coquillat, C Consejo, P Nouvel, ...
Nano letters 17 (11), 7015-7020, 2017
1292017
Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor
F Teppe, D Veksler, VY Kachorovski, AP Dmitriev, X Xie, XC Zhang, ...
Applied Physics Letters 87 (2), 2005
1252005
Nanometer size field effect transistors for terahertz detectors
W Knap, S Rumyantsev, MS Vitiello, D Coquillat, S Blin, N Dyakonova, ...
Nanotechnology 24 (21), 214002, 2013
1242013
Magneto-Optical Signature of Massless Kane Electrons in
A Akrap, M Hakl, S Tchoumakov, I Crassee, J Kuba, MO Goerbig, ...
Physical review letters 117 (13), 136401, 2016
1222016
Temperature-driven massless Kane fermions in HgCdTe crystals
F Teppe, M Marcinkiewicz, SS Krishtopenko, S Ruffenach, C Consejo, ...
Nature communications 7 (1), 12576, 2016
1132016
Plasma wave oscillations in nanometer field effect transistors for terahertz detection and emission
W Knap, F Teppe, N Dyakonova, D Coquillat, J Łusakowski
Journal of Physics: Condensed Matter 20 (38), 384205, 2008
1042008
Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors
N Dyakonova, F Teppe, J Łusakowski, W Knap, M Levinshtein, ...
Journal of Applied Physics 97 (11), 2005
972005
Pressure-and temperature-driven phase transitions in HgTe quantum wells
SS Krishtopenko, I Yahniuk, DB But, VI Gavrilenko, W Knap, F Teppe
Physical Review B 94 (24), 245402, 2016
942016
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