Lead lanthanum zirconate titanate ceramic thin films for energy storage S Tong, B Ma, M Narayanan, S Liu, R Koritala, U Balachandran, D Shi ACS applied materials & interfaces 5 (4), 1474-1480, 2013 | 212 | 2013 |
Charge gradient microscopy S Hong, S Tong, WI Park, Y Hiranaga, Y Cho, A Roelofs Proceedings of the National Academy of Sciences 111 (18), 6566-6569, 2014 | 57 | 2014 |
Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils B Ma, S Tong, M Narayanan, S Liu, S Chao, U Balachandran Materials Research Bulletin 46 (7), 1124-1129, 2011 | 51 | 2011 |
Enhanced dielectric properties of Pb0. 92La0. 08 Zr0. 52Ti0. 48O3 films with compressive stress B Ma, S Liu, S Tong, M Narayanan Journal of Applied Physics 112 (11), 2012 | 45 | 2012 |
Imaging ferroelectric domains and domain walls using charge gradient microscopy: role of screening charges S Tong, IW Jung, YY Choi, S Hong, A Roelofs Acs Nano 10 (2), 2568-2574, 2016 | 37 | 2016 |
A self-limiting electro-ablation technique for the top-down synthesis of large-area monolayer flakes of 2D materials S Das, MK Bera, S Tong, B Narayanan, G Kamath, A Mane, AP Paulikas, ... Scientific reports 6 (1), 28195, 2016 | 32 | 2016 |
Mechanical removal and rescreening of local screening charges at ferroelectric surfaces S Tong, WI Park, YY Choi, L Stan, S Hong, A Roelofs Physical Review Applied 3 (1), 014003, 2015 | 28 | 2015 |
Tunable and rapid self-assembly of block copolymers using mixed solvent vapors WI Park, S Tong, Y Liu, IW Jung, A Roelofs, S Hong Nanoscale 6 (24), 15216-15221, 2014 | 28 | 2014 |
Effect of lanthanum content and substrate strain on structural and electrical properties of lead lanthanum zirconate titanate thin films S Tong, M Narayanan, B Ma, S Liu, RE Koritala, U Balachandran, D Shi Materials Chemistry and Physics 140 (2-3), 427-430, 2013 | 27 | 2013 |
Residual stress of (Pb0. 92La0. 08)(Zr0. 52Ti0. 48) O3 films grown by a sol–gel process B Ma, S Liu, S Tong, M Narayanan, RE Koritala, Z Hu, U Balachandran Smart materials and structures 22 (5), 055019, 2013 | 26 | 2013 |
Estimation of intrinsic contribution to dielectric response of Pb0. 92La0. 08Zr0. 52Ti0. 48O3 thin films at low frequencies using high bias fields M Narayanan, S Tong, S Liu, B Ma, U Balachandran Applied Physics Letters 102 (6), 2013 | 25 | 2013 |
Charge collection kinetics on ferroelectric polymer surface using charge gradient microscopy YY Choi, S Tong, S Ducharme, A Roelofs, S Hong Scientific Reports 6 (1), 25087, 2016 | 23 | 2016 |
Bipolar resistance switching in Pt/CuOx/Pt via local electrochemical reduction K D'Aquila, C Phatak, MV Holt, BD Stripe, S Tong, WI Park, S Hong, ... Applied Physics Letters 104 (24), 2014 | 23 | 2014 |
Modified Johnson model for ferroelectric lead lanthanum zirconate titanate at very high fields and below Curie temperature M Narayanan, S Tong, B Ma, S Liu, U Balachandran Applied Physics Letters 100 (2), 2012 | 21 | 2012 |
Temperature-dependent dielectric nonlinearity of relaxor ferroelectric Pb0. 92La0. 08Zr0. 52Ti0. 48O3 thin films B Ma, Z Hu, S Liu, S Tong, M Narayanan, RE Koritala, U Balachandran Applied Physics Letters 102 (20), 2013 | 20 | 2013 |
Fabrication and characterization of ferroelectric PLZT film capacitors on metallic substrates B Ma, M Narayanan, S Tong, U Balachandran Journal of materials science 45, 151-157, 2010 | 19 | 2010 |
Effect of dead layer and strain on the diffuse phase transition of PLZT relaxor thin films S Tong, M Narayanan, B Ma, RE Koritala, S Liu, UB Balachandran, D Shi Acta materialia 59 (3), 1309-1316, 2011 | 17 | 2011 |
Dense PLZT films grown on nickel substrates by PVP-modified sol–gel method B Ma, S Chao, M Narayanan, S Liu, S Tong, RE Koritala, U Balachandran Journal of Materials Science 48, 1180-1185, 2013 | 16 | 2013 |
Ferroelectric-to-relaxor crossover in Sb doped PLZT x/52/48 (2≤ x≤ 16) piezoelectric ceramics S Tong, Z Ling Journal of Asian Ceramic Societies 2 (1), 1-4, 2014 | 10 | 2014 |
Size and temperature effects on dielectric breakdown of ferroelectric films S Tong Journal of Advanced Ceramics 10 (1), 181–186, 2021 | 9 | 2021 |