Bottom up fill in high aspect ratio trenches L Nittala, K Shannon, N Draeger, M Rathod, H Te Nijenhuis, ...
US Patent App. 13/313,735, 2012
492 2012 CVD flowable gap fill F Wang, VY Lu, B Lu, WF Yau, N Draeger
US Patent 8,187,951, 2012
491 2012 Sequential UV induced chemical vapor deposition JA Fair, N Taylor
US Patent 7,897,215, 2011
467 2011 Sequential ion, UV, and electron induced chemical vapor deposition JA Fair, W van den Hoek, N Taylor
US Patent 6,627,268, 2003
428 2003 Sequential electron induced chemical vapor deposition JA Fair, N Taylor
US Patent 6,720,260, 2004
425 2004 Methods and apparatus for forming flowable dielectric films having low porosity M Rathod, D Padhi, N Draeger, BJ Van Schravendijk, K Ashtiani
US Patent App. 14/519,712, 2015
364 2015 Low-K oxide deposition by hydrolysis and condensation NM Ndiege, K Nittala, DB Wong, GA Antonelli, NS Draeger, ...
US Patent 9,245,739, 2016
332 2016 Gap fill integration K Ashtiani, M Wood, J Drewery, N Shoda, B Van Schravendijk, L Nittala, ...
US Patent 8,728,958, 2014
319 2014 Flowable oxide deposition using rapid delivery of process gases CKL Mui, L Nittala, NS Draeger
US Patent 8,278,224, 2012
316 2012 Flowable oxide film with tunable wet etch rate N Draeger, K Shannon, B Van Schravendijk, K Ashtiani
US Patent 8,846,536, 2014
289 2014 Atomic layer removal process with higher etch amount N Draeger, H Te Nijenhuis, H Meinhold, B Van Schravendijk, L Nittala
US Patent 8,058,179, 2011
267 2011 ALD of tantalum using a hydride reducing agent JA Fair, J Sung, N Taylor
US Patent 7,144,806, 2006
242 2006 Selective refractory metal and nitride capping JA Fair, RH Havemann, J Sung, N Taylor, SH Lee, MA Plano
US Patent 6,844,258, 2005
201 2005 Area-selective atomic layer deposition assisted by self-assembled monolayers: a comparison of Cu, Co, W, and Ru D Bobb-Semple, KL Nardi, N Draeger, DM Hausmann, SF Bent
Chemistry of Materials 31 (5), 1635-1645, 2019
181 2019 Low-temperature growth and critical epitaxial thicknesses of fully strained metastable O Gurdal, P Desjardins, JRA Carlsson, N Taylor, HH Radamson, ...
Journal of Applied Physics 83 (1), 162-170, 1998
170 1998 VLSI fabrication processes for introducing pores into dielectric materials WGM van den Hoek, NS Draeger, R Humayun, RS Hill, J Sun, GW Ray
US Patent 7,166,531, 2007
131 2007 Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus HFR Greer, JA Fair, J Sung, NS Draeger
US Patent 7,107,998, 2006
97 2006 Ge(001) gas‐source molecular beam epitaxy on Ge(001)2×1 and Si(001)2×1 from Ge2 H6 : Growth kinetics and surface roughening TR Bramblett, Q Lu, NE Lee, N Taylor, MA Hasan, JE Greene
Journal of applied physics 77 (4), 1504-1513, 1995
78 1995 Growth of Si {sub 1 {minus} x} Ge {sub x}(011) on Si (011) 16 {times} 2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions N Taylor, H Kim, T Spila, JA Eades, G Glass, P Desjardins, JE Greene
Journal of Applied Physics 85 (1), 1999
72 1999 Selective refractory metal and nitride capping JA Fair, RH Havemann, J Sung, N Taylor, SH Lee, MA Plano
US Patent 7,157,798, 2007
55 2007 