Change of InAs/GaAs quantum dot shape and composition during capping H Eisele, A Lenz, R Heitz, R Timm, M Dähne, Y Temko, T Suzuki, K Jacobi
Journal of Applied Physics 104 (12), 2008
135 2008 Reversed truncated cone composition distribution of A Lenz, R Timm, H Eisele, C Hennig, SK Becker, RL Sellin, UW Pohl, ...
Applied Physics Letters 81 (27), 5150-5152, 2002
111 2002 Electronic and structural differences between wurtzite and zinc blende InAs nanowire surfaces: experiment and theory M Hjort, S Lehmann, J Knutsson, AA Zakharov, YA Du, S Sakong, R Timm, ...
ACS nano 8 (12), 12346-12355, 2014
96 2014 Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2 R Timm, A Fian, M Hjort, C Thelander, E Lind, JN Andersen, ...
Applied Physics Letters 97 (13), 2010
92 2010 Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering Z Yong, KM Persson, MS Ram, G D'Acunto, Y Liu, S Benter, J Pan, Z Li, ...
Applied Surface Science 551, 149386, 2021
82 2021 Self-Organized Formation of R Timm, H Eisele, A Lenz, L Ivanova, G Balakrishnan, DL Huffaker, ...
Physical review letters 101 (25), 256101, 2008
81 2008 Direct imaging of atomic scale structure and electronic properties of GaAs wurtzite and zinc blende nanowire surfaces M Hjort, S Lehmann, J Knutsson, R Timm, D Jacobsson, E Lundgren, ...
Nano letters 13 (9), 4492-4498, 2013
80 2013 Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning DB Suyatin, V Jain, VA Nebol’sin, J Trägårdh, ME Messing, JB Wagner, ...
Nature Communications 5 (1), 3221, 2014
73 2014 Structure and intermixing of GaSb∕ GaAs quantum dots R Timm, H Eisele, A Lenz, SK Becker, J Grabowski, TY Kim, ...
Applied physics letters 85 (24), 5890-5892, 2004
70 2004 Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide R Timm, AR Head, S Yngman, JV Knutsson, M Hjort, SR McKibbin, ...
Nature communications 9 (1), 1412, 2018
68 2018 Quantum ring formation and antimony segregation in GaSb∕ GaAs nanostructures R Timm, A Lenz, H Eisele, L Ivanova, M Dähne, G Balakrishnan, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
56 2008 Nanovoids in InGaAs∕ GaAs quantum dots observed by cross-sectional scanning tunneling microscopy A Lenz, H Eisele, R Timm, SK Becker, RL Sellin, UW Pohl, D Bimberg, ...
Applied physics letters 85 (17), 3848-3850, 2004
56 2004 InGaN platelets: synthesis and applications toward green and red light-emitting diodes Z Bi, F Lenrick, J Colvin, A Gustafsson, O Hultin, A Nowzari, T Lu, ...
Nano Letters 19 (5), 2832-2839, 2019
53 2019 Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111) B substrates J Wu, E Lind, R Timm, M Hjort, A Mikkelsen, LE Wernersson
Applied Physics Letters 100 (13), 2012
53 2012 Electrical and surface properties of InAs/InSb nanowires cleaned by atomic hydrogen JL Webb, J Knutsson, M Hjort, S Gorji Ghalamestani, KA Dick, R Timm, ...
Nano Letters 15 (8), 4865-4875, 2015
52 2015 Local Density of States and Interface Effects in Semimetallic<? format?> ErAs Nanoparticles Embedded in GaAs JK Kawasaki, R Timm, KT Delaney, E Lundgren, A Mikkelsen, ...
Physical Review Letters 107 (3), 036806, 2011
52 2011 Direct measurement and analysis of the conduction band density of states in diluted L Ivanova, H Eisele, MP Vaughan, P Ebert, A Lenz, R Timm, O Schumann, ...
Physical Review B—Condensed Matter and Materials Physics 82 (16), 161201, 2010
47 2010 Surface chemistry, structure, and electronic properties from microns to the atomic scale of axially doped semiconductor nanowires M Hjort, J Wallentin, R Timm, AA Zakharov, U Hakanson, JN Andersen, ...
ACS nano 6 (11), 9679-9689, 2012
46 2012 Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a O Schumann, S Birner, M Baudach, L Geelhaar, H Eisele, L Ivanova, ...
Physical Review B—Condensed Matter and Materials Physics 71 (24), 245316, 2005
44 2005 Structure of InAs/GaAs quantum dots grown with Sb surfactant R Timm, H Eisele, A Lenz, TY Kim, F Streicher, K Pötschke, UW Pohl, ...
Physica E: Low-Dimensional Systems and Nanostructures 32 (1-2), 25-28, 2006
43 2006 
Andrea LenzInstitut für Festkörperphysik, Technische Universität BerlinBestätigte E-Mail-Adresse bei physik.tu-berlin.de