| High energy electron fluxes in dc-augmented capacitively coupled plasmas. II. Effects on twisting in high aspect ratio etching of dielectrics M Wang, MJ Kushner Journal of Applied Physics 107 (2), 2010 | 123* | 2010 |
| Damage by radicals and photons during plasma cleaning of porous low-k SiOCH. I. Ar/O2 and He/H2 plasmas J Shoeb, MM Wang, MJ Kushner Journal of Vacuum Science & Technology A 30 (4), 2012 | 60 | 2012 |
| Interconnect formation using a sidewall mask layer X Hu, M Wang, L Huang US Patent 8,916,472, 2014 | 47 | 2014 |
| Implementation of atomic layer etching of silicon: Scaling parameters, feasibility, and profile control A Ranjan, M Wang, SD Sherpa, V Rastogi, A Koshiishi, PLG Ventzek Journal of Vacuum Science & Technology A 34 (3), 2016 | 44 | 2016 |
| Methods for high precision etching of substrates A Ranjan, M Wang, PLG Ventzek US Patent 9,768,033, 2017 | 39 | 2017 |
| Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas M Wang, MJ Kushner Journal of Vacuum Science & Technology A 29 (5), 2011 | 25 | 2011 |
| Challenges and mitigation strategies for resist trim etch in resist-mandrel based SAQP integration scheme N Mohanty, E Franke, E Liu, A Raley, J Smith, R Farrell, M Wang, K Ito, ... Advanced Etch Technology for Nanopatterning IV 9428, 67-80, 2015 | 19 | 2015 |
| Method for atomic layer etching A Ranjan, S Sherpa, M Wang US Patent 9,881,807, 2018 | 18 | 2018 |
| Plasma propagation through porous dielectric sheets M Wang, JE Foster, MJ Kushner IEEE Transactions on Plasma Science 39 (11), 2244-2245, 2011 | 15 | 2011 |
| Scaling of atomic layer etching of SiO2 in fluorocarbon plasmas: Transient etching and surface roughness X Wang, M Wang, P Biolsi, MJ Kushner Journal of Vacuum Science & Technology A 39 (3), 2021 | 14 | 2021 |
| Quasiatomic layer etching of silicon oxide selective to silicon nitride in topographic structures using fluorocarbon plasmas M Wang, PLG Ventzek, A Ranjan Journal of Vacuum Science & Technology A 35 (3), 2017 | 10 | 2017 |
| Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF4/O2 and Ar plasmas G Antoun, T Tillocher, A Girard, P Lefaucheux, J Faguet, H Kim, D Zhang, ... Journal of Vacuum Science & Technology A 40 (5), 2022 | 9 | 2022 |
| Methods for high precision plasma etching of substrates M Wang, A Ranjan, PLG Ventzek US Patent 10,211,065, 2019 | 9 | 2019 |
| Progress, opportunities and challenges in modeling of plasma etching Y Yang, M Wang, MJ Kushner 2008 International Interconnect Technology Conference, 90-92, 2008 | 9 | 2008 |
| Control of atomic layer reactions in plasma processing P Ventzek, SD Sherpa, M Wang, V Rastogi, A Ranjan ECS Transactions 75 (6), 25, 2016 | 5 | 2016 |
| Fundamental study on the selective etching of SiGe and Si in ClF3 gas for nanosheet gate-all-around transistor manufacturing: A first principle study YH Tsai, M Wang Journal of Vacuum Science & Technology B 40 (1), 2022 | 4 | 2022 |
| Atomic layer etch (ALE) of tungsten or other metal layers YH Tsai, D Zhang, M Wang, A Mosden, M Flaugh US Patent 11,189,499, 2021 | 2 | 2021 |
| Independent control of etching and passivation gas components for highly selective silicon oxide/silicon nitride etching D Zhang, YH Tsai, M Wang US Patent 11,024,508, 2021 | 2 | 2021 |
| Atomic level control of pattern fidelity during SAC etch M Wang, D Zhang, S Morikita, Y Shi, H Kim, J Lucas, K Taniguchi, P Biolsi Advanced Etch Technology and Process Integration for Nanopatterning X 11615 …, 2021 | 2 | 2021 |
| Selective plasma etching of silicon oxide relative to silicon nitride by gas pulsing D Zhang, YH Tsai, M Wang US Patent 11,158,517, 2021 | 1 | 2021 |