| Back-end-of-line compatible transistors for monolithic 3-D integration S Datta, S Dutta, B Grisafe, J Smith, S Srinivasa, H Ye IEEE micro 39 (6), 8-15, 2019 | 123 | 2019 |
| SoC logic compatible multi-bit FeMFET weight cell for neuromorphic applications K Ni, JA Smith, B Grisafe, T Rakshit, B Obradovic, JA Kittl, M Rodder, ... 2018 IEEE International Electron Devices Meeting (IEDM), 13.2. 1-13.2. 4, 2018 | 115 | 2018 |
| Monolithic 3D integration of high endurance multi-bit ferroelectric FET for accelerating compute-in-memory S Dutta, H Ye, W Chakraborty, YC Luo, M San Jose, B Grisafe, A Khanna, ... 2020 IEEE International Electron Devices Meeting (IEDM), 36.4. 1-36.4. 4, 2020 | 109 | 2020 |
| Fundamental understanding and control of device-to-device variation in deeply scaled ferroelectric FETs K Ni, W Chakraborty, J Smith, B Grisafe, S Datta 2019 Symposium on VLSI Technology, T40-T41, 2019 | 85 | 2019 |
| Programmable coupled oscillators for synchronized locomotion S Dutta, A Parihar, A Khanna, J Gomez, W Chakraborty, M Jerry, B Grisafe, ... Nature communications 10 (1), 3299, 2019 | 81 | 2019 |
| Ag/HfO2based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs N Shukla, B Grisafe, RK Ghosh, N Jao, A Aziz, J Frougier, M Jerry, ... 2016 IEEE International Electron Devices Meeting (IEDM), 34.6. 1-34.6. 4, 2016 | 70 | 2016 |
| BEOL compatible dual-gate ultra thin-body W-doped indium-oxide transistor with Ion= 370μA/μm, SS= 73mV/dec and Ion/Ioff Ratio> 4× 109 W Chakraborty, B Grisafe, H Ye, I Lightcap, K Ni, S Datta 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 68 | 2020 |
| Low thermal budget (< 250° C) dual-gate amorphous indium tungsten oxide (IWO) thin-film transistor for monolithic 3-D integration W Chakraborty, H Ye, B Grisafe, I Lightcap, S Datta IEEE Transactions on Electron Devices 67 (12), 5336-5342, 2020 | 61 | 2020 |
| In-memory computing primitive for sensor data fusion in 28 nm HKMG FeFET technology K Ni, B Grisafe, W Chakraborty, AK Saha, S Dutta, M Jerry, JA Smith, ... 2018 IEEE International Electron Devices Meeting (IEDM), 16.1. 1-16.1. 4, 2018 | 50 | 2018 |
| Two-dimensional tantalum disulfide: controlling structure and properties via synthesis R Zhao, B Grisafe, RK Ghosh, S Holoviak, B Wang, K Wang, N Briggs, ... 2D Materials 5 (2), 025001, 2018 | 50 | 2018 |
| A novel ferroelectric superlattice based multi-level cell non-volatile memory K Ni, J Smith, H Ye, B Grisafe, GB Rayner, A Kummel, S Datta 2019 IEEE International Electron Devices Meeting (IEDM), 28.8. 1-28.8. 4, 2019 | 47 | 2019 |
| Neural sampling machine with stochastic synapse allows brain-like learning and inference S Dutta, G Detorakis, A Khanna, B Grisafe, E Neftci, S Datta Nature Communications 13 (1), 2571, 2022 | 46 | 2022 |
| Equivalent oxide thickness (EOT) scaling with hafnium zirconium oxide high-κ dielectric near morphotropic phase boundary K Ni, A Saha, W Chakraborty, H Ye, B Grisafe, J Smith, GB Rayner, ... 2019 IEEE international electron devices meeting (IEDM), 7.4. 1-7.4. 4, 2019 | 45 | 2019 |
| Ultra-low power probabilistic IMT neurons for stochastic sampling machines M Jerry, A Parihar, B Grisafe, A Raychowdhury, S Datta 2017 Symposium on VLSI Technology, T186-T187, 2017 | 45 | 2017 |
| Performance Enhancement of Ag/HfO2 Metal Ion Threshold Switch Cross-Point Selectors B Grisafe, M Jerry, JA Smith, S Datta IEEE Electron Device Letters 40 (10), 1602-1605, 2019 | 44 | 2019 |
| Fundamental mechanism behind volatile and non-volatile switching in metallic conducting bridge RAM N Shukla, RK Ghosh, B Grisafe, S Datta 2017 IEEE International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2017 | 41 | 2017 |
| Fabrication, characterization, and analysis of Ge/GeSn heterojunction p-type tunnel transistors C Schulte-Braucks, R Pandey, RN Sajjad, M Barth, RK Ghosh, B Grisafe, ... IEEE Transactions on Electron Devices 64 (10), 4354-4362, 2017 | 40 | 2017 |
| Hf0.5Zr0.5O2-Based Ferroelectric Gate HEMTs With Large Threshold Voltage Tuning Range C Wu, H Ye, N Shaju, J Smith, B Grisafe, S Datta, P Fay IEEE Electron Device Letters 41 (3), 337-340, 2020 | 37 | 2020 |
| Plasmonics-based detection of H2 and CO: discrimination between reducing gases facilitated by material control G Dharmalingam, NA Joy, B Grisafe, MA Carpenter Beilstein Journal of Nanotechnology 3 (1), 712-721, 2012 | 36 | 2012 |
| Fully transparent field-effect transistor with high drain current and on-off ratio J Park, H Paik, K Nomoto, K Lee, BE Park, B Grisafe, LC Wang, ... APL Materials 8 (1), 2020 | 34 | 2020 |
Matthew JerryUniversity of Notre Dame / Pennsylvania State UniversityBestätigte E-Mail-Adresse bei nd.edu
