| Observation of enhanced infrared absorption in silicon supersaturated with gold by pulsed laser melting of nanometer-thick gold films PK Chow, W Yang, Q Hudspeth, SQ Lim, JS Williams, JM Warrender Journal of Applied Physics 123 (13), 2018 | 29 | 2018 |
| Toward understanding and optimizing Au-hyperdoped Si infrared photodetectors SQ Lim, CTK Lew, PK Chow, JM Warrender, JS Williams, BC Johnson APL Materials 8 (6), 2020 | 22 | 2020 |
| Electrical and optical doping of silicon by pulsed-laser melting SQ Lim, JS Williams Micro 2 (1), 1-22, 2021 | 20 | 2021 |
| A critical evaluation of Ag-and Ti-hyperdoped Si for Si-based infrared light detection SQ Lim, AJ Akey, E Napolitani, PK Chow, JM Warrender, JS Williams Journal of Applied Physics 129 (6), 2021 | 20 | 2021 |
| Process-induced defects in Au-hyperdoped Si photodiodes SQ Lim, CTK Lew, PK Chow, JM Warrender, JS Williams, BC Johnson Journal of Applied Physics 126 (22), 2019 | 18 | 2019 |
| An integrated widefield probe for practical diamond nitrogen-vacancy microscopy GJ Abrahams, SC Scholten, AJ Healey, IO Robertson, N Dontschuk, ... Applied Physics Letters 119 (25), 2021 | 12 | 2021 |
| Sub-bandgap photoresponse and leakage current analysis in gold thin film-hyperdoped silicon photodiodes PK Chow, SQ Lim, JS Williams, JM Warrender Semiconductor Science and Technology 37 (12), 124002, 2022 | 6 | 2022 |
| Carrier lifetimes in gold–hyperdoped silicon—Influence of dopant incorporation methods and concentration profiles SS Dissanayake, NO Pallat, PK Chow, SQ Lim, Y Liu, Q Yue, R Fiutak, ... APL Materials 10 (11), 2022 | 6 | 2022 |
| Millisecond electron spin coherence time for erbium ions in silicon IR Berkman, A Lyasota, GG de Boo, JG Bartholomew, SQ Lim, ... arXiv preprint arXiv:2307.10021, 2023 | 5 | 2023 |
| High-resolution Rutherford backscattering spectrometry with an optimised solid-state detector SG Robson, AM Jakob, D Holmes, SQ Lim, BC Johnson, DN Jamieson Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2020 | 5 | 2020 |
| Remote plasma-enhanced chemical vapor deposition of GeSn on Si: Material and defect characterization SQ Lim, LQ Huston, LA Smillie, GJ Grzybowski, X Huang, JS Williams, ... Journal of Applied Physics 133 (23), 2023 | 4 | 2023 |
| Impact of ion implantation and laser processing parameters on carrier lifetimes in gold-hyperdoped silicon SS Dissanayake, PK Chow, SQ Lim, W Yang, R Fiutak, JS Williams, ... Semiconductor Science and Technology 38 (2), 024003, 2023 | 4 | 2023 |
| Graphene‐Enhanced Single Ion Detectors for Deterministic Near‐Surface Dopant Implantation in Diamond NFL Collins, AM Jakob, SG Robson, SQ Lim, P Räcke, BC Johnson, B Liu, ... Advanced Functional Materials 33 (51), 2306601, 2023 | 3 | 2023 |
| Optical hyperdoping W Yang, SQ Lim, JS Williams Laser Annealing Processes in Semiconductor Technology, 323-356, 2021 | 3 | 2021 |
| Room temperature electrical characteristics of gold-hyperdoped silicon SQ Lim, JM Warrender, C Notthoff, T Ratcliff, JS Williams, BC Johnson Journal of Applied Physics 135 (9), 2024 | 2 | 2024 |
| Cellular breakdown and carrier lifetimes in gold-hyperdoped silicon QM Hudspeth, M Altwerger, PK Chow, MJ Sher, SS Dissanayake, W Yang, ... Semiconductor Science and Technology 37 (12), 124003, 2022 | 2 | 2022 |
| Defects in transition-metal-hyperdoped si and their role in near-infrared light detection SQ Lim PQDT-Global, 2021 | 2 | 2021 |
| Evaluating carrier lifetimes in laser hyperdoped silicon using terahertz spectroscopy S Dissanayake, P Chow, SQ Lim, M Wilkins, E Dumitresc, W Yang, ... CLEO: QELS_Fundamental Science, JTu3O. 6, 2018 | 1 | 2018 |
| Strong coupling of a superconducting flux qubit to single bismuth donors T Chang, I Holzman, SQ Lim, D Holmes, BC Johnson, DN Jamieson, ... arXiv preprint arXiv:2411.02852, 2024 | | 2024 |
| Comparison of GeSn alloy films prepared by ion implantation and remote plasma-enhanced chemical vapor deposition methods X Huang, SQ Lim, T Ratcliff, LA Smillie, GJ Grzybowski, BB Claflin, ... Journal of Vacuum Science & Technology B 42 (4), 2024 | | 2024 |
Jeffrey M. WarrenderU.S. Army DEVCOM Armament Center - Benet LaboratoriesBestätigte E-Mail-Adresse bei post.harvard.edu
