| Non-planar gate all-around device and method of fabrication thereof W Rachmady, R Pillarisetty, VH Le, JT Kavalieros, RS Chau, JS Kachian US Patent 8,987,794, 2015 | 672 | 2015 |
| Academic and industry research progress in germanium nanodevices R Pillarisetty Nature 479 (7373), 324-328, 2011 | 658 | 2011 |
| Methods of forming nickel sulfide film on a semiconductor device SB Clendenning, N Mukherjee, R Pillarisetty US Patent 7,964,490, 2011 | 455 | 2011 |
| Fabrication, characterization, and physics of III–V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swing G Dewey, B Chu-Kung, J Boardman, JM Fastenau, J Kavalieros, R Kotlyar, ... 2011 International electron devices meeting, 33.6. 1-33.6. 4, 2011 | 445 | 2011 |
| Qubits made by advanced semiconductor manufacturing AMJ Zwerver, T Krähenmann, TF Watson, L Lampert, HC George, ... Nature Electronics 5 (3), 184-190, 2022 | 298 | 2022 |
| CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture M Radosavljevic, R Pillarisetty, G Dewey, N Mukherjee, J Kavalieros, ... US Patent 9,123,567, 2015 | 211 | 2015 |
| Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to … M Radosavljevic, G Dewey, D Basu, J Boardman, B Chu-Kung, ... 2011 international electron devices meeting, 33.1. 1-33.1. 4, 2011 | 196 | 2011 |
| High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc= 0.5 V) III–V CMOS architecture R Pillarisetty, B Chu-Kung, S Corcoran, G Dewey, J Kavalieros, H Kennel, ... 2010 International Electron Devices Meeting, 6.7. 1-6.7. 4, 2010 | 172 | 2010 |
| Unity beta ratio tri-gate transistor static random access memory (SRAM) R Pillarisetty, S Datta, J Kavalieros, BS Doyle, U Shah US Patent 7,825,437, 2010 | 167 | 2010 |
| Non-planar, multi-gate InGaAs quantum well field effect transistors with high-k gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic … M Radosavljevic, G Dewey, JM Fastenau, J Kavalieros, R Kotlyar, ... 2010 International Electron Devices Meeting, 6.1. 1-6.1. 4, 2010 | 148 | 2010 |
| Transistors with high concentration of boron doped germanium AS Murthy, GA Glass, T Ghani, R Pillarisetty, N Mukherjee, JT Kavalieros, ... US Patent 8,901,537, 2014 | 147 | 2014 |
| Techniques for forming shallow trench isolation W Rachmady, BY Jin, R Pillarisetty, RS Chau US Patent App. 12/639,451, 2011 | 143 | 2011 |
| Variable gate width for gate all-around transistors W Rachmady, VH Le, R Pillarisetty, JT Kavalieros, RS Chau, SH Sung US Patent 9,590,089, 2017 | 137 | 2017 |
| High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC= 0.5 V) logic applications M Radosavljevic, T Ashley, A Andreev, SD Coomber, G Dewey, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 135 | 2008 |
| Non-planar germanium quantum well devices R Pillarisetty, JT Kavalieros, W Rachmady, U Shah, B Chu-Kung, ... US Patent 8,283,653, 2012 | 133 | 2012 |
| Group III-V devices with delta-doped layer under channel region MK Hudait, PG Tolchinsky, RS Chau, M Radosavljevic, R Pillarisetty, ... US Patent App. 12/316,878, 2010 | 126 | 2010 |
| Non-planar quantum well device having interfacial layer and method of forming same W Rachmady, R Pillarisetty, VH Le, R Chau US Patent 8,575,653, 2013 | 124 | 2013 |
| Heterogeneous integration of enhancement mode in0.7ga0.3as quantum well transistor on silicon substrate using thin (les 2 μm) composite buffer architecture for … MK Hudait, G Dewey, S Datta, JM Fastenau, J Kavalieros, WK Liu, ... 2007 IEEE International Electron Devices Meeting, 625-628, 2007 | 121 | 2007 |
| Modulation-doped multi-gate devices MK Hudait, R Pillarisetty, M Radosavljevic, G Dewey, JT Kavalieros US Patent 8,120,063, 2012 | 107 | 2012 |
| Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface G Dewey, RS Chau, M Radosavljevic, HW Then, SB Clendenning, ... US Patent 8,890,264, 2014 | 106 | 2014 |
