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Vinayak Rastogi
Vinayak Rastogi
Bestätigte E-Mail-Adresse bei amat.com
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Zitiert von
Zitiert von
Jahr
Method of selective silicon nitride etching
A Ranjan, V Rastogi, SD Sherpa
US Patent 10,381,235, 2019
3272019
Synthesis of light‐diffracting assemblies from microspheres and nanoparticles in droplets on a superhydrophobic surface
V Rastogi, S Melle, OG Calderón, AA García, M Marquez, OD Velev
Advanced Materials 20 (22), 4263-4268, 2008
2062008
Measuring agglomerate size distribution and dependence of localized surface plasmon resonance absorbance on gold nanoparticle agglomerate size using analytical ultracentrifugation
JM Zook, V Rastogi, RI MacCuspie, AM Keene, J Fagan
ACS nano 5 (10), 8070-8079, 2011
1402011
Analyzing surfactant structures on length and chirality resolved (6, 5) single-wall carbon nanotubes by analytical ultracentrifugation
JA Fagan, M Zheng, V Rastogi, JR Simpson, CY Khripin, ...
Acs Nano 7 (4), 3373-3387, 2013
1022013
Anisotropic particle synthesis inside droplet templates on superhydrophobic surfaces
V Rastogi, AA García, M Marquez, OD Velev
Macromolecular rapid communications 31 (2), 190-195, 2010
882010
Development and evaluation of realistic microbioassays in freely suspended droplets on a chip
V Rastogi, OD Velev
Biomicrofluidics 1 (1), 2007
642007
Implementation of atomic layer etching of silicon: Scaling parameters, feasibility, and profile control
A Ranjan, M Wang, SD Sherpa, V Rastogi, A Koshiishi, PLG Ventzek
Journal of Vacuum Science & Technology A 34 (3), 2016
442016
Method for selectivity enhancement during dry plasma etching
V Rastogi, A Ranjan
US Patent 9,666,447, 2017
362017
Size and density measurement of core–shell Si nanoparticles by analytical ultracentrifugation
K Nontapot, V Rastogi, JA Fagan, V Reipa
Nanotechnology 24 (15), 155701, 2013
362013
Towards electrical testable SOI devices using Directed Self-Assembly for fin formation
CC Liu, C Estrada-Raygoza, H He, M Cicoria, V Rastogi, N Mohanty, ...
Alternative Lithographic Technologies VI 9049, 35-46, 2014
302014
Method for roughness improvement and selectivity enhancement during arc layer etch via adjustment of carbon-fluorine content
V Rastogi, A Ranjan
US Patent 9,607,843, 2017
272017
Method for roughness improvement and selectivity enhancement during arc layer etch using hydrogen
V Rastogi, A Ranjan
US Patent 9,576,816, 2017
262017
Method for roughness improvement and selectivity enhancement during arc layer etch using carbon
V Rastogi, A Ranjan
US Patent 9,530,667, 2016
262016
Driving DSA into volume manufacturing
M Somervell, T Yamauchi, S Okada, T Tomita, T Nishi, S Kawakami, ...
Advances in Patterning Materials and Processes XXXII 9425, 202-212, 2015
212015
Manufacturability considerations for DSA
RA Farrell, ER Hosler, GM Schmid, J Xu, ME Preil, V Rastogi, N Mohanty, ...
Advances in Patterning Materials and Processes XXXI 9051, 242-253, 2014
162014
Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)
Y Feurprier, K Lutker-Lee, V Rastogi, H Matsumoto, Y Chiba, A Metz, ...
Advanced Etch Technology for Nanopatterning IV 9428, 57-66, 2015
152015
Microfluidic characterization of sustained solute release from porous supraparticles
V Rastogi, KP Velikov, OD Velev
Physical Chemistry Chemical Physics 12 (38), 11975-11983, 2010
152010
Catalytic wet air oxidation of pulp and paper mill effluent
A Garg, S Saha, V Rastogi, S Chand
NISCAIR-CSIR, India, 2003
142003
Fin formation using graphoepitaxy DSA for FinFET device fabrication
CC Liu, FL Lie, V Rastogi, E Franke, N Mohanty, R Farrell, H Tsai, K Lai, ...
Alternative Lithographic Technologies VII 9423, 159-168, 2015
132015
Etch considerations for directed self-assembly patterning using capacitively coupled plasma
V Rastogi, PLG Ventzek, A Ranjan
Journal of Vacuum Science & Technology A 36 (3), 2018
72018
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