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emanuela schilirò
emanuela schilirò
cnr-imm
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Zitiert von
Zitiert von
Jahr
Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate
SE Panasci, E Schilirò, G Greco, M Cannas, FM Gelardi, S Agnello, ...
ACS Applied Materials & Interfaces 13 (26), 31248-31259, 2021
782021
Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
E Schilirò, R Lo Nigro, P Fiorenza, F Roccaforte
AIP Advances 6 (7), 2016
482016
Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer
G Fisichella, E Schiliro, S Di Franco, P Fiorenza, R Lo Nigro, F Roccaforte, ...
ACS applied materials & interfaces 9 (8), 7761-7771, 2017
472017
Conductive atomic force microscopy of semiconducting transition metal dichalcogenides and heterostructures
F Giannazzo, E Schilirò, G Greco, F Roccaforte
Nanomaterials 10 (4), 803, 2020
452020
Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy
F Giannazzo, M Bosi, F Fabbri, E Schilirò, G Greco, F Roccaforte
physica status solidi (RRL)–Rapid Research Letters 14 (2), 1900393, 2020
402020
High-performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors
F Giannazzo, G Greco, E Schilirò, R Lo Nigro, I Deretzis, A La Magna, ...
ACS Applied Electronic Materials 1 (11), 2342-2354, 2019
402019
Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
RL Nigro, E Schilirò, G Mannino, S Di Franco, F Roccaforte
Journal of Crystal Growth 539, 125624, 2020
372020
Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation
SE Panasci, E Schilirò, F Migliore, M Cannas, FM Gelardi, F Roccaforte, ...
Applied Physics Letters 119 (9), 2021
352021
Monolayer graphene doping and strain dynamics induced by thermal treatments in controlled atmosphere
A Armano, G Buscarino, M Cannas, FM Gelardi, F Giannazzo, E Schilirò, ...
Carbon 127, 270-279, 2018
342018
Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al2O3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide
E Schilirò, R Lo Nigro, F Roccaforte, I Deretzis, A La Magna, A Armano, ...
Advanced Materials Interfaces 6 (10), 1900097, 2019
302019
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
E Schilirò, RL Nigro, SE Panasci, FM Gelardi, S Agnello, R Yakimova, ...
Carbon 169, 172-181, 2020
282020
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization
SE Panasci, A Koos, E Schilirò, S Di Franco, G Greco, P Fiorenza, ...
Nanomaterials 12 (2), 182, 2022
252022
Recent advances in seeded and seed-layer-free atomic layer deposition of high-K dielectrics on graphene for electronics
E Schilirò, R Lo Nigro, F Roccaforte, F Giannazzo
C 5 (3), 53, 2019
252019
Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy
F Giannazzo, I Shtepliuk, IG Ivanov, T Iakimov, A Kakanakova-Georgieva, ...
Nanotechnology 30 (28), 284003, 2019
252019
Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions
F Giannazzo, SE Panasci, E Schilirò, F Roccaforte, A Koos, M Nemeth, ...
Advanced Materials Interfaces 9 (22), 2200915, 2022
232022
Advances in the fabrication of graphene transistors on flexible substrates
G Fisichella, SL Verso, S Di Marco, V Vinciguerra, E Schilirò, S Di Franco, ...
Beilstein Journal of Nanotechnology 8 (1), 467-474, 2017
232017
Structural and insulating behaviour of high-permittivity binary oxide thin films for silicon carbide and gallium nitride electronic devices
R Lo Nigro, P Fiorenza, G Greco, E Schilirò, F Roccaforte
Materials 15 (3), 830, 2022
222022
Laminated Al2O3–HfO2 layers grown by atomic layer deposition for microelectronics applications
RL Nigro, E Schilirò, G Greco, P Fiorenza, F Roccaforte
Thin Solid Films 601, 68-72, 2016
212016
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H‐SiC
F Giannazzo, SE Panasci, E Schilirò, P Fiorenza, G Greco, F Roccaforte, ...
Advanced Materials Interfaces 10 (1), 2201502, 2023
192023
Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition
E Schilirò, P Fiorenza, C Bongiorno, C Spinella, S Di Franco, G Greco, ...
AIP Advances 10 (12), 2020
192020
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