Growth of ZnO by MOCVD using alkylzinc alkoxides as single-source precursors M AzadáMalik Journal of Materials Chemistry 4 (8), 1249-1253, 1994 | 109 | 1994 |
Optical, structural investigations and band-gap bowing parameter of GaInN alloys M Moret, B Gil, S Ruffenach, O Briot, C Giesen, M Heuken, S Rushworth, ... Journal of Crystal Growth 311 (10), 2795-2797, 2009 | 82 | 2009 |
Liquid injection atomic layer deposition of silver nanoparticles PR Chalker, S Romani, PA Marshall, MJ Rosseinsky, S Rushworth, ... Nanotechnology 21 (40), 405602, 2010 | 73 | 2010 |
Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications A Abrutis, V Plausinaitiene, M Skapas, C Wiemer, O Salicio, A Pirovano, ... Chemistry of Materials 20 (11), 3557-3559, 2008 | 65 | 2008 |
Atomic layer deposition of Ru from CpRu (CO) 2Et using O2 gas and O2 plasma N Leick, ROF Verkuijlen, L Lamagna, E Langereis, S Rushworth, ... Journal of Vacuum Science & Technology A 29 (2), 2011 | 61 | 2011 |
Atomic layer deposition of crystalline molybdenum oxide thin films and phase control by post-deposition annealing M Mattinen, PJ King, L Khriachtchev, MJ Heikkilä, B Fleming, ... Materials today chemistry 9, 17-27, 2018 | 60 | 2018 |
Pyrolysis of dimethylhydrazine and its co-pyrolysis with triethylgallium E Bourret-Courchesne, Q Ye, DW Peters, J Arnold, M Ahmed, SJC Irvine, ... Journal of crystal growth 217 (1-2), 47-54, 2000 | 60 | 2000 |
Structural and electronic characterization of β-SiC films on Si grown from mono-methylsilane precursors G Krötz, W Legner, G Müller, HW Grueninger, L Snith, B Leese, A Jones, ... Materials Science and Engineering: B 29 (1-3), 154-159, 1995 | 57 | 1995 |
Evaluation of copper organometallic sources for CuGaSe2 photovoltaic applications MC Artaud-Gillet, S Duchemin, R Odedra, G Orsal, N Rega, S Rushworth, ... Journal of Crystal Growth 248, 163-168, 2003 | 55 | 2003 |
Growth of low carbon content AlxGa1− xAs by reduced pressure MOVPE using trimethylamine alane AC Jones, SA Rushworth Journal of crystal growth 106 (2-3), 253-257, 1990 | 55 | 1990 |
Growth of low carbon content AlxGa1− xAs by reduced pressure MOVPE using trimethylamine alane AC Jones, SA Rushworth Journal of crystal growth 106 (2-3), 253-257, 1990 | 55 | 1990 |
Vapor pressure of metal organic precursors M Fulem, K Růžička, V Růžička, E Hulicius, T Šimeček, K Melichar, ... Journal of crystal growth 248, 99-107, 2003 | 51 | 2003 |
Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies C Dubourdieu, H Roussel, C Jiménez, M Audier, JP Sénateur, S Lhostis, ... Materials Science and Engineering: B 118 (1-3), 105-111, 2005 | 49 | 2005 |
Addition of yttrium into HfO2 films: Microstructure and electrical properties C Dubourdieu, E Rauwel, H Roussel, F Ducroquet, B Holländer, ... Journal of Vacuum Science & Technology A 27 (3), 503-514, 2009 | 45 | 2009 |
Preparation of dense, ultra-thin MIEC ceramic membranes by atmospheric spray-pyrolysis technique A Abrutis, A Teiserskis, G Garcia, V Kubilius, Z Saltyte, Z Salciunas, ... Journal of Membrane Science 240 (1-2), 113-122, 2004 | 45 | 2004 |
MOVPE growth of AlGaAs using trimethylamine alane JS Roberts, CC Button, JPR David, AC Jones, SA Rushworth Journal of crystal growth 104 (4), 857-860, 1990 | 44 | 1990 |
Vapour pressure measurement of low volatility precursors SA Rushworth, LM Smith, AJ Kingsley, R Odedra, R Nickson, P Hughes Microelectronics Reliability 45 (5-6), 1000-1002, 2005 | 42 | 2005 |
The growth of CdS and CdSe alloys by MOCVD using a new dimethylcadmium adduct AC Jones, SA Rushworth, PJ Wright, B Cockayne, P O'Brien, JR Walsh Journal of crystal growth 97 (3-4), 537-541, 1989 | 42 | 1989 |
Recent developments in metalorganic precursors for metalorganic chemical vapour deposition AC Jones, SA Rushworth, J Auld Journal of crystal growth 146 (1-4), 503-510, 1995 | 40 | 1995 |
Deposition of aluminum nitride thin films by MOCVD from the trimethylaluminum–ammonia adduct AC Jones, SA Rushworth, DJ Houlton, JS Roberts, V Roberts, ... Chemical Vapor Deposition 2 (1), 5-8, 1996 | 38 | 1996 |