Ab initio simulation of single- and few-layer Á Szabó, R Rhyner, M Luisier
Physical Review B 92 (3), 035435, 2015
122 2015 One-dimensional edge contacts to a monolayer semiconductor A Jain, Á Szabó, M Parzefall, E Bonvin, T Taniguchi, K Watanabe, ...
Nano letters 19 (10), 6914-6923, 2019
107 2019 Ab-Initio Simulation of van der Waals MoTe2 –SnS2 Heterotunneling FETs for Low-Power ElectronicsA Szabo, SJ Koester, M Luisier
IEEE Electron Device Letters 36 (5), 514-516, 2015
97 2015 Light from van der Waals quantum tunneling devices M Parzefall, Á Szabó, T Taniguchi, K Watanabe, M Luisier, L Novotny
Nature communications 10 (1), 292, 2019
86 2019 2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope C Klinkert, Á Szabó, C Stieger, D Campi, N Marzari, M Luisier
ACS nano 14 (7), 8605-8615, 2020
81 2020 MoS2 /MoTe2 Heterostructure Tunnel FETs Using Gated Schottky Contacts Y Balaji, Q Smets, Á Śzabo, M Mascaro, D Lin, I Asselberghs, I Radu, ...
Advanced Functional Materials 30 (4), 1905970, 2020
68 2020 Electron Transport through Metal/MoS2 Interfaces: Edge- or Area-Dependent Process? Á Szabó, A Jain, M Parzefall, L Novotny, M Luisier
Nano letters 19 (6), 3641-3647, 2019
61 2019 Group-II acceptors in wurtzite AlN: A screened hybrid density functional study A Szabo, NT Son, E Janzén, A Gali
Applied Physics Letters 96 (19), 2010
48 2010 First-principles simulations of 2-D semiconductor devices: Mobility, IV characteristics, and contact resistance M Luisier, A Szabo, C Stieger, C Klinkert, S Brück, A Jain, L Novotny
2016 IEEE International Electron Devices Meeting (IEDM), 5.4. 1-5.4. 4, 2016
43 2016 Effect of oxygen on single-wall silicon carbide nanotubes studied by first-principles calculations Á Szabó, A Gali
Physical Review B—Condensed Matter and Materials Physics 80 (7), 075425, 2009
39 2009 Phonon-limited performance of single-layer, single-gate black phosphorus n-and p-type field-effect transistors A Szabo, R Rhyner, H Carrillo-Nunez, M Luisier
2015 IEEE International Electron Devices Meeting (IEDM), 12.1. 1-12.1. 4, 2015
36 2015 Ab Initio Simulation of Band-to-Band Tunneling FETs With Single- and Few-Layer 2-D Materials as ChannelsA Szabo, C Klinkert, D Campi, C Stieger, N Marzari, M Luisier
IEEE Transactions on Electron Devices 65 (10), 4180-4187, 2018
33 2018 Metal-dichalcogenide hetero-TFETs: Are they a viable option for low power electronics? A Szabo, SJ Koester, M Luisier
72nd Device Research Conference, 19-20, 2014
26 2014 Benchmarking of monolithic 3D integrated MX2 FETs with Si FinFETs T Agarwal, A Szabo, MG Bardon, B Sorée, I Radu, P Raghavan, M Luisier, ...
2017 IEEE international electron devices meeting (IEDM), 5.7. 1-5.7. 4, 2017
24 2017 Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials C Stieger, A Szabo, T Bunjaku, M Luisier
Journal of Applied Physics 122 (4), 2017
21 2017 Defects at nitrogen site in electron-irradiated AlN NT Son, A Gali, Á Szabó, M Bickermann, T Ohshima, J Isoya, E Janzén
Applied Physics Letters 98 (24), 2011
21 2011 Under-the-barrier model: An extension of the top-of-the-barrier model to efficiently and accurately simulate ultrascaled nanowire transistors A Szabo, M Luisier
IEEE transactions on electron devices 60 (7), 2353-2360, 2013
19 2013 Ab-initio simulations of MoS2 transistors: From mobility calculation to device performance evaluation A Szabo, R Rhyner, M Luisier
2014 IEEE International Electron Devices Meeting, 30.4. 1-30.4. 4, 2014
16 2014 Dissipative quantum transport simulations in two-dimensional semiconductor devices from first principles Á Szabó
ETH Zurich, 2016
12 2016 Atomistic simulation of nanodevices M Luisier, R Rhyner, A Szabo, A Pedersen
2016 International Conference on Simulation of Semiconductor Processes and …, 2016
7 2016