Ubiquitous relaxation in BTI stressing—New evaluation and insights B Kaczer, T Grasser, J Roussel, J Martin-Martinez, R O'Connor, ...
2008 IEEE International Reliability Physics Symposium, 20-27, 2008
310 2008 Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy JY Zhang, IW Boyd, BJ O'sullivan, PK Hurley, PV Kelly, JP Senateur
Journal of Non-Crystalline Solids 303 (1), 134-138, 2002
239 2002 Comphy—A compact-physics framework for unified modeling of BTI G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ...
Microelectronics Reliability 85, 49-65, 2018
189 2018 BJ O’sullivan, PK Hurley, C Leveugle, JH Das
Journal of Applied Physics 89 (7), 3811-3820, 2001
100 2001 Crystalline thin‐foil silicon solar cells: where crystalline quality meets thin‐film processing F Dross, K Baert, T Bearda, J Deckers, V Depauw, O El Daif, I Gordon, ...
Progress in Photovoltaics: Research and Applications 20 (6), 770-784, 2012
98 2012 Estimation of fixed charge densities in hafnium-silicate gate dielectrics VS Kaushik, BJ O'Sullivan, G Pourtois, N Van Hoornick, A Delabie, ...
IEEE Transactions on Electron Devices 53 (10), 2627-2633, 2006
90 2006 Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD Q Fang, JY Zhang, ZM Wang, JX Wu, BJ O'Sullivan, PK Hurley, ...
Thin Solid Films 428 (1-2), 263-268, 2003
77 2003 Interface of ultrathin HfO2 films deposited by UV-photo-CVD Q Fang, JY Zhang, Z Wang, M Modreanu, BJ O'sullivan, PK Hurley, ...
Thin Solid Films 453, 203-207, 2004
72 2004 Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies C Dubourdieu, H Roussel, C Jiménez, M Audier, JP Sénateur, S Lhostis, ...
Materials Science and Engineering: B 118 (1-3), 105-111, 2005
49 2005 Characterisation of HfO2 deposited by photo-induced chemical vapour deposition Q Fang, JY Zhang, ZM Wang, JX Wu, BJ O'Sullivan, PK Hurley, ...
Thin Solid Films 427 (1-2), 391-396, 2003
47 2003 Passivation of a metal contact with a tunneling layer X Loozen, JB Larsen, F Dross, M Aleman, T Bearda, BJ O'sullivan, ...
Energy Procedia 21, 75-83, 2012
45 2012 Examination of the Si (111) SiO2, Si (110) SiO2, and Si (100) SiO2 interfacial properties following rapid thermal annealing PK Hurley, BJ O’Sullivan, FN Cubaynes, PA Stolk, FP Widdershoven, ...
Journal of the Electrochemical Society 149 (3), G194, 2002
44 2002 Impact of Charge trapping on Imprint and its Recovery in HfO2 based FeFET Y Higashi, N Ronchi, B Kaczer, K Banerjee, SRC McMitchell, ...
2019 IEEE International Electron Devices Meeting (IEDM), 15.6. 1-15.6. 4, 2019
41 2019 Low VT CMOS using doped Hf-based oxides, TaC-based Metals and Laser-only Anneal S Kubicek, T Schram, V Paraschiv, R Vos, M Demand, C Adelmann, ...
2007 IEEE International Electron Devices Meeting, 49-52, 2007
36 2007 Analysis of PK Hurley, A Stesmans, VV Afanas’ ev, BJ O’sullivan, E O’Callaghan
Journal of Applied Physics 93 (7), 3971-3973, 2003
35 2003 Interface States and P b Defects at the Si (100)/HfO2 Interface PK Hurley, BJ O’Sullivan, VV Afanas’ev, A Stesmans
Electrochemical and solid-state letters 8 (2), G44, 2004
34 2004 Solving the BEOL compatibility challenge of top-pinned magnetic tunnel junction stacks J Swerts, E Liu, S Couet, S Mertens, S Rao, W Kim, K Garello, L Souriau, ...
2017 IEEE International Electron Devices Meeting (IEDM), 38.6. 1-38.6. 4, 2017
33 2017 Effective work function modulation by controlled dielectric monolayer deposition L Pantisano, T Schram, B O’Sullivan, T Conard, S De Gendt, ...
Applied physics letters 89 (11), 2006
33 2006 Defect profiling in FEFET Si: HfO2 layers BJ O'sullivan, V Putcha, R Izmailov, V Afanas' ev, E Simoen, T Jung, ...
Applied Physics Letters 117 (20), 2020
30 2020 Investigation of imprint in FE-HfO₂ and its recovery Y Higashi, B Kaczer, AS Verhulst, BJ O’Sullivan, N Ronchi, ...
IEEE Transactions on Electron Devices 67 (11), 4911-4917, 2020
30 2020