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Rifat Zaman
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Novel Fingertip Image-Based Heart Rate Detection Methods for a Smartphone
R Zaman, CH Cho, K Hartmann-Vaccarezza, TN Phan, G Yoon, ...
Sensors, 2017
272017
A novel diversity method for smartphone camera-based heart rhythm signals in the presence of motion and noise artifacts
F Tabei, R Zaman, KH Foysal, R Kumar, Y Kim, JW Chong
PLOS ONE, 2019
192019
Impact of high‐κ gate dielectric and other physical parameters on the electrostatics and threshold voltage of long channel gate‐all‐around nanowire transistor
SUZ Khan, M Hossain, FU Rahman, R Zaman, M Hossen, QDM Khosru
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2015
192015
Analytical modeling of gate capacitance and drain current of gate-all-around InxGa1−xAs nanowire MOSFET
SUZ Khan, MS Hossain, MO Hossen, FU Rahman, R Zaman, ...
2014 2nd International Conference on Electronic Design (ICED), 89-93, 2014
112014
Motion and Noise Artifact-Resilient Atrial Fibrillation Detection Using a Smartphone
R Zaman, JW Chong, CH Cho, N Esa, DD McManus, KH Chon
2016 IEEE International Conference on Connected Health: Applications …, 2016
72016
Capacitance-Voltage Characteristics of Gate-All-Around InxGa1-XAs Nanowire Transistor
QDM Khosru, SUZ Khan, MS Hossain, FU Rahman, MO Hossen, ...
ECS Transactions 53 (1), 169-176, 2013
72013
Uncoupled mode space approach towards transport modeling of Gate-All-Around InxGa1−xAs nanowire MOSFET
SUZ Khan, MS Hossain, FU Rahman, R Zaman, MO Hossen, ...
8th International Conference on Electrical and Computer Engineering, 100-103, 2014
52014
Characterization of interface trap density of In-rich InGaAs Gate-all-around nanowire MOSFETs
FU Rahman, MS Hossain, SUZ Khan, R Zaman, MO Hossen, ...
2012 7th International Conference on Electrical and Computer Engineering …, 2012
42012
Self-consistent determination of threshold voltage of In-rich Gate-All-Around InxGa1−xAs nanowire transistor incorporating quantum mechanical effect
R Zaman, SUZ Khan, MS Hossain, FU Rahman, MO Hossen, ...
2012 7th International Conference on Electrical and Computer Engineering …, 2012
42012
A Novel Heart Rate Monitoring Method using a Smartphone
R Zaman, CH Cho, Y Kim, JW Chong
Healthcare Innovation Point-Of-Care Technologies Conference (HI-POCT), 2016 …, 2016
32016
Ballistic performance limit and gate leakage modeling of Rectangular Gate-all-around InGaAs Nanowire Transistors with ALD Al2O3as Gate Dielectric
MO Hossen, MS Hossain, SUZ Khan, FU Rahman, R Zaman, ...
2012 IEEE International Conference on Electron Devices and Solid State …, 2012
32012
Analytical modeling of potential profile and threshold voltage for rectangular gate-all-around III–V nanowire MOSFETs with ATLAS verification
MS Hossain, SUZ Khan, MO Hossen, FU Rahman, R Zaman, ...
2012 IEEE International Conference on Electron Devices and Solid State …, 2012
22012
Self-consistent Capacitance-Voltage Characterization of Gate-all-around Graded Nanowire Transistor
SUZ Khan, M Hossain, M Hossen, FU Rahman, R Zaman, QDM Khosru
arXiv preprint arXiv:1406.5257, 2014
12014
Low-Cost USB-Based Data-Logger for LVDT Sensor
MS Islam, ML Ali, R Zaman, ZM Tanvir
International Conference on Industrial Engineering and Operations Management …, 2014
2014
Carrier Transport Phenomena in Cylindrical Channel III-V Gate-All-Around Nanowire Transistor
SUZ Khan, MS Hossain, FU Rahman, MO Hossen, R Zaman, ...
International Semiconductor Device Research Symposium (ISDRS), Maryland, USA, 2013
2013
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