Resonant cavity light‐emitting diode EF Schubert, YH Wang, AY Cho, LW Tu, GJ Zydzik
Applied physics letters 60 (8), 921-923, 1992
473 1992 Light emitting diode AY Cho, EF Schubert, LW Tu, GJ Zydzik
US Patent 5,226,053, 1993
212 1993 GaN nanowire ultraviolet photodetector with a graphene transparent contact AV Babichev, H Zhang, P Lavenus, FH Julien, AY Egorov, YT Lin, LW Tu, ...
Applied Physics Letters 103 (20), 2013
157 2013 Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy LW Tu, CL Hsiao, TW Chi, I Lo, KY Hsieh
Applied Physics Letters 82 (10), 1601-1603, 2003
155 2003 Spin splitting in modulation-doped I Lo, JK Tsai, WJ Yao, PC Ho, LW Tu, TC Chang, S Elhamri, WC Mitchel, ...
Physical Review B 65 (16), 161306, 2002
133 2002 Generation of electricity in GaN nanorods induced by piezoelectric effect WS Su, YF Chen, CL Hsiao, LW Tu
Applied Physics Letters 90 (6), 2007
131 2007 Elimination of heterojunction band discontinuities by modulation doping EF Schubert, LW Tu, GJ Zydzik, RF Kopf, A Benvenuti, MR Pinto
Applied physics letters 60 (4), 466-468, 1992
130 1992 Anomalous temporal response of gain guided surface emitting lasers NK Dutta, LW Tu, G Hasnain, G Zydzik, YH Wang, AY Cho
Electronics Letters 27 (3), 208-210, 1991
116 1991 Thermal annealing effect on material characterizations of β-Ga2O3 epilayer grown by metal organic chemical vapor deposition CY Huang, RH Horng, DS Wuu, LW Tu, HS Kao
Applied Physics Letters 102 (1), 2013
101 2013 Visible-blind photodetector based on p–i–n junction GaN nanowire ensembles A de Luna Bugallo, M Tchernycheva, G Jacopin, L Rigutti, FH Julien, ...
Nanotechnology 21 (31), 315201, 2010
101 2010 High-dielectric-constant Ta2O5/n-GaN metal-oxide-semiconductor structure LW Tu, WC Kuo, KH Lee, PH Tsao, CM Lai, AK Chu, JK Sheu
Applied Physics Letters 77 (23), 3788-3790, 2000
97 2000 Micro-Raman spectroscopy of a single freestanding GaN nanorod grown by molecular beam epitaxy CL Hsiao, LW Tu, TW Chi, M Chen, TF Young, CT Chia, YM Chang
Applied Physics Letters 90 (4), 2007
91 2007 Theoretical simulations of the effects of the indium content, thickness, and defect density of the i-layer on the performance of pin InGaN single homojunction solar cells SW Feng, CM Lai, CH Chen, WC Sun, LW Tu
Journal of applied physics 108 (9), 2010
89 2010 Vertical cavity surface emmitting lasers with transparent electrodes RF Kopf, HM O'Bryan Jr, EF Schubert, LW Tu, YH Wang, GJ Zydzik
US Patent 5,115,441, 1992
88 1992 Recombination velocity at oxide–GaAs interfaces fabricated by in situ molecular beam epitaxy M Passlack, M Hong, JP Mannaerts, JR Kwo, LW Tu
Applied physics letters 68 (25), 3605-3607, 1996
86 1996 Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfaces M Hong, JP Mannaerts, JE Bower, J Kwo, M Passlack, WY Hwang, LW Tu
Journal of crystal growth 175, 422-427, 1997
81 1997 Effects of crystallinity and point defects on optoelectronic applications of β-Ga2 O3 epilayers P Ravadgar, RH Horng, SD Yao, HY Lee, BR Wu, SL Ou, LW Tu
Optics Express 21 (21), 24599-24610, 2013
75 2013 Specular scattering probability of acoustic phonons in atomically flat interfaces YC Wen, CL Hsieh, KH Lin, HP Chen, SC Chin, CL Hsiao, YT Lin, ...
Physical review letters 103 (26), 264301, 2009
74 2009 Vertical cavity surface emitting lasers with electrically conducting mirrors DG Deppe, LC Feldman, RF Kopf, EF Schubert, LW Tu, GJ Zydzik
US Patent 5,068,868, 1991
69 1991 In‐vacuum cleaving and coating of semiconductor laser facets using thin silicon and a dielectric LW Tu, EF Schubert, M Hong, GJ Zydzik
Journal of applied physics 80 (11), 6448-6451, 1996
64 1996 