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Marko Radosavljevic
Marko Radosavljevic
Intel Corporation
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Titel
Zitiert von
Zitiert von
Jahr
Carbon nanotube composites for thermal management
MJ Biercuk, MC Llaguno, M Radosavljevic, JK Hyun, AT Johnson, ...
Applied Physics Letters 80 (15), 2767-2769, 2002
24662002
Group III-N transistors for system on chip (SOC) architecture integrating power management and radio frequency circuits
HW Then, R Chau, V Rao, N Mukherjee, M Radosavljevic, R Pillarisetty, ...
US Patent 10,290,614, 2019
1464*2019
Biological physics
P Nelson
WH Freeman, 2004
11352004
Benchmarking nanotechnology for high-performance and low-power logic transistor applications
R Chau, S Datta, M Doczy, B Doyle, B Jin, J Kavalieros, A Majumdar, ...
IEEE Transactions on Nanotechnology 4 (2), 153-158, 2005
8792005
Nonvolatile molecular memory elements based on ambipolar nanotube field effect transistors
M Radosavljević, M Freitag, KV Thadani, AT Johnson
Nano Letters 2 (7), 761-764, 2002
4982002
Fabrication, characterization, and physics of III–V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swing
G Dewey, B Chu-Kung, J Boardman, JM Fastenau, J Kavalieros, R Kotlyar, ...
2011 International electron devices meeting, 33.6. 1-33.6. 4, 2011
4452011
Tunneling versus thermionic emission in one-dimensional semiconductors
J Appenzeller, M Radosavljević, J Knoch, P Avouris
Physical review letters 92 (4), 48301, 2004
3832004
Tri-gate transistor architecture with high-k gate dielectrics, metal gates and strain engineering
J Kavalieros, B Doyle, S Datta, G Dewey, M Doczy, B Jin, D Lionberger, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 50-51, 2006
3492006
Block contact architectures for nanoscale channel transistors
M Radosavljevic, A Majumdar, BS Doyle, J Kavalieros, ML Doczy, ...
US Patent 7,898,041, 2011
338*2011
Transistor gate-channel arrangements
GW Dewey, R Rios, S Shivaraman, M Radosavljevic, KE Millard, ...
US Patent App. 16/080,101, 2019
2852019
Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic …
M Radosavljevic, B Chu-Kung, S Corcoran, G Dewey, MK Hudait, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
2782009
Drain voltage scaling in carbon nanotube transistors
M Radosavljević, S Heinze, J Tersoff, P Avouris
Applied Physics Letters 83, 2435, 2003
2682003
Block contact architectures for nanoscale channel transistors
M Radosavljevic, A Majumdar, BS Doyle, J Kavalieros, ML Doczy, ...
US Patent 7,279,375, 2007
2232007
Block contact architectures for nanoscale channel transistors
M Radosavljevic, A Majumdar, BS Doyle, J Kavalieros, ML Doczy, ...
US Patent 7,279,375, 2007
2232007
Application of high-< i> κ</i> gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology
R Chau, J Brask, S Datta, G Dewey, M Doczy, B Doyle, J Kavalieros, B Jin, ...
Microelectronic engineering 80, 1-6, 2005
2182005
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture
M Radosavljevic, R Pillarisetty, G Dewey, N Mukherjee, J Kavalieros, ...
US Patent 9,123,567, 2015
2112015
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture
M Radosavljevic, R Pillarisetty, G Dewey, N Mukherjee, J Kavalieros, ...
US Patent 9,123,567, 2015
2112015
3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact …
HW Then, S Dasgupta, M Radosavljevic, P Agababov, I Ban, R Bristol, ...
2019 IEEE International Electron Devices Meeting (IEDM), 17.3. 1-17.3. 4, 2019
2062019
Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to …
M Radosavljevic, G Dewey, D Basu, J Boardman, B Chu-Kung, ...
2011 International Electron Devices Meeting, 33.1. 1-33.1. 4, 2011
1962011
Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors
S Heinze, M Radosavljević, J Tersoff, P Avouris
Physical Review B 68 (23), 235418, 2003
1942003
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