Impact of deposition and annealing temperature on material and electrical characteristics of ALD HfO2 D Triyoso, R Liu, D Roan, M Ramon, NV Edwards, R Gregory, D Werho, ...
Journal of the Electrochemical Society 151 (10), F220, 2004
184 2004 CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films ME Ramon, A Gupta, C Corbet, DA Ferrer, HCP Movva, G Carpenter, ...
ACS nano 5 (9), 7198-7204, 2011
156 2011 Film properties of ALD DH Triyoso, RI Hegde, J Grant, P Fejes, R Liu, D Roan, M Ramon, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
110 2004 Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition DH Triyoso, RI Hegde, S Zollner, ME Ramon, S Kalpat, R Gregory, ...
Journal of applied physics 98 (5), 2005
101 2005 Three-gigahertz graphene frequency doubler on quartz operating beyond the transit frequency ME Ramón, KN Parrish, SF Chowdhury, CW Magnuson, HCP Movva, ...
IEEE Transactions on Nanotechnology 11 (5), 877-883, 2012
86 2012 HfO2 gate dielectrics deposited via tetrakis diethylamido hafnium J Schaeffer, NV Edwards, R Liu, D Roan, B Hradsky, R Gregory, J Kulik, ...
Journal of the Electrochemical Society 150 (4), F67, 2003
67 2003 Defect Passivation With Fluorine and Interface Engineering for Hf-Based High- HH Tseng, PJ Tobin, S Kalpat, JK Schaeffer, ME Ramon, LRC Fonseca, ...
IEEE Transactions on Electron Devices 54 (12), 3267-3275, 2007
62 2007 Physical and electrical characteristics of HfO2 gate dielectrics deposited by ALD and MOCVD DH Triyoso, M Ramon, RI Hegde, D Roan, R Garcia, J Baker, XD Wang, ...
Journal of the Electrochemical Society 152 (3), G203, 2005
55 2005 Characteristics of mixed oxides and nanolaminates of atomic layer deposited HfO2–TiO2 gate dielectrics DH Triyoso, RI Hegde, XD Wang, MW Stoker, R Rai, ME Ramon, ...
Journal of The Electrochemical Society 153 (9), G834, 2006
47 2006 Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/stack HH Tseng, CC Capasso, JK Schaeffer, EA Hebert, PJ Tobin, DC Gilmer, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
45 2004 Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric D Shahrjerdi, T Akyol, M Ramon, DI Garcia-Gutierrez, E Tutuc, ...
Applied Physics Letters 92 (20), 2008
37 2008 BTI characteristics and mechanisms of metal gated HfO/sub 2/films with enhanced interface/bulk process treatments S Kalpat, HH Tseng, M Ramon, M Moosa, D Tekleab, PJ Tobin, ...
IEEE Transactions on Device and Materials Reliability 5 (1), 26-35, 2005
35 2005 A compact model for graphene FETs for linear and non-linear circuits KN Parrish, ME Ramón, SK Banerjee, D Akinwande
Proc. IEEE International Conference on Simulation of Semiconductor Processes …, 2012
33 2012 Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions HCP Movva, ME Ramón, CM Corbet, S Sonde, F Chowdhury, ...
Applied Physics Letters 101 (18), 2012
30 2012 Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2O3 gate dielectric D Shahrjerdi, J Nah, B Hekmatshoar, T Akyol, M Ramon, E Tutuc, ...
Applied Physics Letters 97 (21), 2010
29 2010 Microstructure modified HfO/sub 2/using Zr addition with Ta/sub x/C/sub y/gate for improved device performance and reliability RI Hegde, DH Triyoso, PJ Tobin, S Kalpat, ME Ramon, HH Tseng, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 35-38, 2005
28 2005 Performance of super-critical strained-Si directly on insulator (SC-SSOI) CMOS based on high-performance PD-SOI technology AVY Thean, T White, M Sadaka, L McCormick, M Ramon, R Mora, ...
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 134-135, 2005
27 2005 Method of forming a stacked low temperature diode and related devices Z Tran, K Mori, GT Dao, ME Ramon
US Patent 8,916,872, 2014
24 2014 ALD HfO~ 2 using Heavy Water (D~ 2O) for Improved MOSFET Stability HH Tseng, M Ramon, L Hebert, PJ Tobin, D Triyoso, JM Grant, ZX Jiang, ...
INTERNATIONAL ELECTRON DEVICES MEETING, 83-86, 2003
24 2003 Uniaxial-biaxial stress hybridization for super-critical strained-si directly on insulator (SC-SSOI) PMOS with different channel orientations. AVY Thean, L Prabhu, V Vartanian, M Ramon, BY Nguyen, T White, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
23 2005