Large area efficient interface layer free monolithic perovskite/homo-junction-silicon tandem solar cell with over 20% efficiency J Zheng, CFJ Lau, H Mehrvarz, FJ Ma, Y Jiang, X Deng, A Soeriyadi, ...
Energy & Environmental Science 11 (9), 2432-2443, 2018
230 2018 Untapped potentials of inorganic metal halide perovskite solar cells A Ho-Baillie, M Zhang, CFJ Lau, FJ Ma, S Huang
Joule 3 (4), 938-955, 2019
224 2019 Optimised antireflection coatings using silicon nitride on textured silicon surfaces based on measurements and multidimensional modelling S Duttagupta, F Ma, B Hoex, T Mueller, AG Aberle
Energy procedia 15, 78-83, 2012
190 2012 21.8% Efficient Monolithic Perovskite/Homo-Junction-Silicon Tandem Solar Cell on 16 cm2 J Zheng, H Mehrvarz, FJ Ma, CFJ Lau, MA Green, S Huang, ...
ACS Energy Letters 3 (9), 2299-2300, 2018
126 2018 Recent progress and future prospects of perovskite tandem solar cells AWY Ho-Baillie, J Zheng, MA Mahmud, FJ Ma, DR McKenzie, MA Green
Applied Physics Reviews 8 (4), 2021
118 2021 Unveiling microscopic carrier loss mechanisms in 12% efficient Cu2 ZnSnSe4 solar cells J Li, J Huang, F Ma, H Sun, J Cong, K Privat, RF Webster, S Cheong, ...
Nature Energy 7 (8), 754-764, 2022
104 2022 Advanced modeling of the effective minority carrier lifetime of passivated crystalline silicon wafers FJ Ma, GG Samudra, M Peters, AG Aberle, F Werner, J Schmidt, B Hoex
Journal of Applied Physics 112 (5), 2012
51 2012 Excellent surface passivation of heavily doped p+ silicon by low-temperature plasma-deposited SiOx/SiNy dielectric stacks with optimised antireflective performance for solar … S Duttagupta, FJ Ma, B Hoex, AG Aberle
Solar Energy Materials and Solar Cells 120, 204-208, 2014
41 2014 Efficient monolithic perovskite–Si tandem solar cells enabled by an ultra-thin indium tin oxide interlayer J Zheng, W Duan, Y Guo, ZC Zhao, H Yi, FJ Ma, LG Caro, C Yi, J Bing, ...
Energy & Environmental Science 16 (3), 1223-1233, 2023
35 2023 Analysing solar cells by circuit modelling S Guo, FJ Ma, B Hoex, AG Aberle, M Peters
Energy Procedia 25, 28-33, 2012
35 2012 Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activation B Liao, R Stangl, F Ma, T Mueller, F Lin, AG Aberle, CS Bhatia, B Hoex
Journal of Physics D: Applied Physics 46 (38), 385102, 2013
33 2013 Progress in Surface Passivation of Heavily Doped n-Type and p-Type Silicon by Plasma-Deposited AlO $ _ {\bm x} $/SiN $ _ {\bm x} $ Dielectric Stacks S Duttagupta, FJ Ma, SF Lin, T Mueller, AG Aberle, B Hoex
IEEE Journal of Photovoltaics 3 (4), 1163-1169, 2013
31 2013 Sentaurus modelling of 6.9% Cu2ZnSnS4 device based on comprehensive electrical & optical characterization A Pu, F Ma, C Yan, J Huang, K Sun, M Green, X Hao
Solar Energy Materials and Solar Cells 160, 372-381, 2017
30 2017 Modeling of stress-retarded thermal oxidation of nonplanar silicon structures for realization of nanoscale devices FJ Ma, SC Rustagi, GS Samudra, H Zhao, N Singh, GQ Lo, DL Kwong
IEEE Electron Device Letters 31 (7), 719-721, 2010
29 2010 Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O3 B Liao, R Stangl, F Ma, Z Hameiri, T Mueller, D Chi, AG Aberle, CS Bhatia, ...
Journal of Applied Physics 114 (9), 2013
25 2013 On elimination of inactive phosphorus in industrial POCl3 diffused emitters for high efficiency silicon solar cells H Li, FJ Ma, Z Hameiri, S Wenham, M Abbott
Solar Energy Materials and Solar Cells 171, 213-221, 2017
20 2017 Partial Crystallization of G Zhang, SK Samanta, PK Singh, FJ Ma, MT Yoo, Y Roh, WJ Yoo
IEEE transactions on electron devices 54 (12), 3177-3185, 2007
20 2007 Numerical simulation of doping process by BBr3 tube diffusion for industrial n-type silicon wafer solar cells M Li, FJ Ma, IM Peters, KD Shetty, AG Aberle, B Hoex, GS Samudra
IEEE Journal of Photovoltaics 7 (3), 755-762, 2017
17 2017 Impact of Auger recombination parameterisations on predicting silicon wafer solar cell performance FJ Ma, H Liu, B Liao, J Chen, Z Du, GS Samudra, AG Aberle, B Hoex, ...
Journal of Computational Electronics 13, 647-656, 2014
15 2014 Characterization and modeling of subfemtofarad nanowire capacitance using the CBCM technique H Zhao, R Kim, A Paul, M Luisier, G Klimeck, FJ Ma, SC Rustagi, ...
IEEE electron device letters 30 (5), 526-528, 2009
15 2009