| Evidence of electrical activity of extended defects in 3C–SiC grown on Si X Song, JF Michaud, F Cayrel, M Zielinski, T Chassagne, E Collard, ... Applied Physics Letters 96 (14), 2010 | 75 | 2010 |
| CW argon laser crystallization of silicon films: structural properties JF Michaud, R Rogel, T Mohammed-Brahim, M Sarret Journal of non-crystalline solids 352 (9-20), 998-1002, 2006 | 34 | 2006 |
| Room light anodic etching of highly doped n-type 4H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces G Gautier, F Cayrel, M Capelle, J Billoué, X Song, JF Michaud Nanoscale research letters 7 (1), 1-6, 2012 | 28 | 2012 |
| Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon M Zielinski, JF Michaud, S Jiao, T Chassagne, AE Bazin, A Michon, ... Journal of Applied Physics 111 (5), 2012 | 26 | 2012 |
| Broad bandwidth air-coupled micromachined ultrasonic transducers for gas sensing P Shanmugam, L Iglesias, JF Michaud, D Alquier, L Colin, I Dufour, ... Ultrasonics 114, 106410, 2021 | 24 | 2021 |
| Micromachining of thin 3C-SiC films for mechanical properties investigation JF Michaud, S Jiao, AE Bazin, M Portail, T Chassagne, M Zielinski, ... Mater. Res. Soc. Symp. Proc 1246, 213, 2010 | 23* | 2010 |
| Ti–Ni ohmic contacts on 3C–SiC doped by nitrogen or phosphorus implantation AE Bazin, JF Michaud, C Autret-Lambert, F Cayrel, T Chassagne, ... Materials Science and Engineering: B 171 (1-3), 120-126, 2010 | 21 | 2010 |
| Investigation of the Young’s modulus and the residual stress of 4H-SiC circular membranes on 4H-SiC substrates J Ben Messaoud, JF Michaud, D Certon, M Camarda, N Piluso, L Colin, ... Micromachines 10 (12), 801, 2019 | 20 | 2019 |
| Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy R Boubekri, E Cambril, L Couraud, L Bernardi, A Madouri, M Portail, ... Journal of Applied Physics 116 (5), 2014 | 20 | 2014 |
| A new approach for AFM cantilever elaboration with 3C-SiC S Jiao, JF Michaud, M Portail, A Madouri, T Chassagne, M Zielinski, ... Materials Letters 77, 54-56, 2012 | 19 | 2012 |
| Original 3C-SiC micro-structure on a 3C–SiC pseudo-substrate JF Michaud, M Portail, T Chassagne, M Zielinski, D Alquier Microelectronic Engineering 105, 65-67, 2013 | 18 | 2013 |
| Structural and electrical characterizations of n-type implanted layers and ohmic contacts on 3C-SiC X Song, J Biscarrat, JF Michaud, F Cayrel, M Zielinski, T Chassagne, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2011 | 16 | 2011 |
| Recent advances in surface preparation of silicon carbide and other wide band gap materials JFMMP M. Zielinski, C. Moisson, S. Monnoye, H. Mank, T. Chassagne, S. Roy, A ... Materials Science Forum 645, 753, 2010 | 16 | 2010 |
| Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition R Khazaka, P Vennéguès, D Alquier, JF Michaud Acta Materialia 98, 336-342, 2015 | 15 | 2015 |
| 3C-SiC - From Electronic to MEMS Devices MPDA Jean-Francois Michaud Advanced Silicon Carbide Devices and Processing, 33-60, 2015 | 15 | 2015 |
| Progresses in cMUT device fabrication using low temperature processes E Bahette, JF Michaud, D Certon, D Gross, D Alquier Journal of Micromechanics and Microengineering 24 (4), 045020, 2014 | 13 | 2014 |
| Toward high-quality 3C–SiC membrane on a 3C–SiC pseudo-substrate R Khazaka, E Bahette, D Alquier, JF Michaud Materials Letters 160, 28-30, 2015 | 12 | 2015 |
| High Quality Ohmic Contacts on n‐type 3C‐SiC Obtained by High and Low Process Temperature AE Bazin, JF Michaud, F Cayrel, M Portail, T Chassagne, M Zielinski, ... AIP Conference Proceedings 1292 (1), 51-54, 2010 | 12 | 2010 |
| CMUT based air coupled transducers for gas-mixture analysis P Shanmugam, L Iglesias, JF Michaud, I Dufour, D Alquier, L Colin, ... 2018 IEEE International Ultrasonics Symposium (IUS), 1-4, 2018 | 11 | 2018 |
| Low frequency noise model in N-MOS transistors operating from sub-threshold to above-threshold regions C Cordier, A Boukhenoufa, L Pichon, JF Michaud Solid-state electronics 49 (8), 1376-1380, 2005 | 11 | 2005 |
