| Organic light emitting diode display KS Park, SY Yoon, MD Chun US Patent 7,714,817, 2010 | 184 | 2010 |
| Organic light emitting diode display KS Park, SY Yoon, MD Chun US Patent 7,649,513, 2010 | 184 | 2010 |
| Comparative study on performance of IGZO transistors with sputtered and atomic layer deposited channel layer MH Cho, H Seol, A Song, S Choi, Y Song, PS Yun, KB Chung, JU Bae, ... IEEE Transactions on Electron Devices 66 (4), 1783-1788, 2019 | 113 | 2019 |
| Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition MH Cho, MJ Kim, H Seul, PS Yun, JU Bae, KS Park, JK Jeong Journal of Information Display 20 (2), 73-80, 2019 | 67 | 2019 |
| Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity T Kim, CH Choi, P Byeon, M Lee, A Song, KB Chung, S Han, SY Chung, ... npj 2D Materials and Applications 6 (1), 4, 2022 | 66 | 2022 |
| Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors S Oh, JH Baeck, JU Bae, KS Park, IB Kang Applied Physics Letters 108 (14), 2016 | 64 | 2016 |
| High-performance amorphous indium gallium zinc oxide thin-film transistors fabricated by atomic layer deposition MH Cho, H Seol, H Yang, PS Yun, JU Bae, KS Park, JK Jeong IEEE Electron Device Letters 39 (5), 688-691, 2018 | 59 | 2018 |
| Thin film transistor substrate and display device using the same S Lee, Y Chang, K Park, M Kim, Y Jeongsuk US Patent 9,786,697, 2017 | 59 | 2017 |
| Gallium doping effects for improving switching performance of p-type copper (I) oxide thin-film transistors JH Bae, JH Lee, SP Park, TS Jung, HJ Kim, D Kim, SW Lee, KS Park, ... ACS applied materials & interfaces 12 (34), 38350-38356, 2020 | 53 | 2020 |
| Reliability of crystalline indium–gallium–zinc-oxide thin-film transistors under bias stress with light illumination K Park, HW Park, HS Shin, J Bae, KS Park, I Kang, KB Chung, JY Kwon IEEE Transactions on Electron Devices 62 (9), 2900-2905, 2015 | 53 | 2015 |
| P‐5: A‐Si TFT Integrated Gate Driver with AC‐driven Single Pull‐Down Structure YH Jang, SY Yoon, B Kim, M Chun, HN Cho, SC Choi, NW Cho, SH Jo, ... SID Symposium Digest of Technical Papers 37 (1), 208-211, 2006 | 53 | 2006 |
| Study on the lateral carrier diffusion and source-drain series resistance in self-aligned top-gate coplanar InGaZnO thin-film transistors SY Hong, HJ Kim, DH Kim, HY Jeong, SH Song, IT Cho, J Noh, PS Yun, ... Scientific Reports 9 (1), 6588, 2019 | 49 | 2019 |
| Systematic decomposition of the positive bias stress instability in self-aligned coplanar InGaZnO thin-film transistors S Choi, J Jang, H Kang, JH Baeck, JU Bae, KS Park, SY Yoon, IB Kang, ... IEEE Electron Device Letters 38 (5), 580-583, 2017 | 48 | 2017 |
| 58.2: Distinguished Paper: Implementation of 240Hz 55‐inch Ultra Definition LCD Driven by a‐IGZO Semiconductor TFT with Copper Signal Lines N Gong, C Park, J Lee, I Jeong, H Han, J Hwang, J Park, K Park, H Jeong, ... SID Symposium Digest of Technical Papers 43 (1), 784-787, 2012 | 46 | 2012 |
| Organic light emitting display N Kong, S Woosup, K Park, C Park, U Chung US Patent 9,396,679, 2016 | 44 | 2016 |
| Display device with touch sensor J Lee, S Nam, MJ Kim, KS Park, J Oh, DS Lee, BY Lee, E Lee, T Kim US Patent 10,877,584, 2020 | 43 | 2020 |
| Network structure modification‐enabled hybrid polymer dielectric film with zirconia for the stretchable transistor applications JO Kim, JS Hur, D Kim, B Lee, JM Jung, HA Kim, UJ Chung, SH Nam, ... Advanced Functional Materials 30 (9), 1906647, 2020 | 43 | 2020 |
| Negative threshold voltage shift in an a-IGZO thin film transistor under X-ray irradiation DG Kim, JU Kim, JS Lee, KS Park, YG Chang, MH Kim, DK Choi RSC advances 9 (36), 20865-20870, 2019 | 35 | 2019 |
| Temperature sensor made of amorphous indium–gallium–zinc oxide TFTs H Jeong, CS Kong, SW Chang, KS Park, SG Lee, YM Ha, J Jang IEEE electron device letters 34 (12), 1569-1571, 2013 | 35 | 2013 |
| Comparison of Top-Gate and Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With the Same SiO2/a-InGaZnO/SiO2 Stack S Oh, JH Baeck, HS Shin, JU Bae, KS Park, IB Kang IEEE Electron Device Letters 35 (10), 1037-1039, 2014 | 33 | 2014 |
