Robert M. Wallace

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Christopher HinkleUniversity of Notre Dame, Electrical EngineeringCorreu electrònic verificat a nd.edu
Stephen McDonnellUniversity of VirginiaCorreu electrònic verificat a virginia.edu
Rafik AddouOregon State UniversityCorreu electrònic verificat a oregonstate.edu
Bruce GnadeSMUCorreu electrònic verificat a smu.edu
Luigi ColomboUniversity of Texas at DallasCorreu electrònic verificat a utdallas.edu
Eric M VogelHightower Professor of Materials Science and Engineering, Georgia Institute of TechnologyCorreu electrònic verificat a mse.gatech.edu
Barry BrennanAtlantic Technological UniversityCorreu electrònic verificat a atu.ie
Hong DongNankai UniversityCorreu electrònic verificat a nankai.edu.cn
Rodney RuoffThe IBS CMCM, Dept. of Chemistry, Dept. of MS&ESchool of Energy and ChEng,Correu electrònic verificat a unist.ac.kr
Manuel Quevedo-lopezUniversity of Texas at DallasCorreu electrònic verificat a utdallas.edu
Francisco Servando Aguirre-TostadoCentro de Investigación en Materiales Avanzados, S.C., Unidad MonterreyCorreu electrònic verificat a cimav.edu.mx
Cheng GongAssociate Professor, University of MarylandCorreu electrònic verificat a umd.edu
Joshua A. RobinsonProf. MatSE; Center for 2DLM; ATOMIC; 2D Crystal Consort.; The Pennsylvania State UniversityCorreu electrònic verificat a psu.edu
Santosh KCSan Diego State UniversityCorreu electrònic verificat a sdsu.edu
pk hurleyTyndall National Institute, University College CorkCorreu electrònic verificat a tyndall.ie
Dmitry ZhernokletovIntermolecular Inc.Correu electrònic verificat a intermolecular.com
Lanxia ChengStaff Engineer_EMD ElectronicsCorreu electrònic verificat a emdgroup.com
Chadwin D. YoungUniversity of Texas at DallasCorreu electrònic verificat a utdallas.edu
Bongki LeeTechnology Development Engineer, GLOBALFOUNDRIESCorreu electrònic verificat a globalfoundries.com
Chenxi ZhangUniversity of Texas at DallasCorreu electrònic verificat a utdallas.edu

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Robert M. Wallace

University of Texas at Dallas

Correu electrònic verificat a utdallas.edu - Pàgina d'inici

Electronic Materials Surfaces Interfaces


Títol Ordena per cites Ordena per any Ordena per títol	Citada per Citada per	Any
High-κ gate dielectrics: Current status and materials properties considerations GD Wilk, RM Wallace, JM Anthony Journal of applied physics 89 (10), 5243-5275, 2001	7790	2001
Carbon-based supercapacitors produced by activation of graphene Y Zhu, S Murali, MD Stoller, KJ Ganesh, W Cai, PJ Ferreira, A Pirkle, ... science 332 (6037), 1537-1541, 2011	6670	2011
Hafnium and zirconium silicates for advanced gate dielectrics GD Wilk, RM Wallace, JM Anthony Journal of Applied Physics 87 (1), 484-492, 2000	1369	2000
The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2 A Pirkle, J Chan, A Venugopal, D Hinojos, CW Magnuson, S McDonnell, ... Applied Physics Letters 99 (12), 2011	1153	2011
The role of oxygen during thermal reduction of graphene oxide studied by infrared absorption spectroscopy M Acik, G Lee, C Mattevi, A Pirkle, RM Wallace, M Chhowalla, K Cho, ... The Journal of Physical Chemistry C 115 (40), 19761-19781, 2011	1013	2011
Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors C Gong, H Zhang, W Wang, L Colombo, RM Wallace, K Cho Applied Physics Letters 103 (5), 2013	923	2013
Near-unity photoluminescence quantum yield in MoS₂ M Amani, DH Lien, D Kiriya, J Xiao, A Azcatl, J Noh, SR Madhvapathy, ... Science 350 (6264), 1065-1068, 2015	916	2015
Defect-Dominated Doping and Contact Resistance in MoS₂ S McDonnell, R Addou, C Buie, RM Wallace, CL Hinkle ACS nano 8 (3), 2880-2888, 2014	901	2014
Zirconium and/or hafnium oxynitride gate dielectric RM Wallace, RA Stoltz, GD Wilk US Patent 6,013,553, 2000	839	2000
The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS₂ Interfaces C Gong, L Colombo, RM Wallace, K Cho Nano letters 14 (4), 1714-1720, 2014	805	2014
High-K materials and metal gates for CMOS applications J Robertson, RM Wallace Materials Science and Engineering: R: Reports 88, 1-41, 2015	784	2015
Two-dimensional gallium nitride realized via graphene encapsulation ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ... Nature materials 15 (11), 1166-1171, 2016	746	2016
Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon GD Wilk, RM Wallace Applied Physics Letters 74 (19), 2854-2856, 1999	676	1999
MoS₂ P-type Transistors and Diodes Enabled by High Work Function MoO_x Contacts S Chuang, C Battaglia, A Azcatl, S McDonnell, JS Kang, X Yin, M Tosun, ... Nano letters 14 (3), 1337-1342, 2014	647	2014
Hole Selective MoO_x Contact for Silicon Solar Cells C Battaglia, X Yin, M Zheng, ID Sharp, T Chen, S McDonnell, A Azcatl, ... Nano letters 14 (2), 967-971, 2014	625	2014
GaAs interfacial self-cleaning by atomic layer deposition CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ... Applied Physics Letters 92 (7), 2008	492	2008
Manganese Doping of Monolayer MoS₂: The Substrate Is Critical K Zhang, S Feng, J Wang, A Azcatl, N Lu, R Addou, N Wang, C Zhou, ... Nano letters 15 (10), 6586-6591, 2015	461	2015
Highly Scalable, Atomically Thin WSe₂ Grown via Metal–Organic Chemical Vapor Deposition SM Eichfeld, L Hossain, YC Lin, AF Piasecki, B Kupp, AG Birdwell, ... ACS nano 9 (2), 2080-2087, 2015	458	2015
First-principles study of metal–graphene interfaces C Gong, G Lee, B Shan, EM Vogel, RM Wallace, K Cho Journal of Applied Physics 108 (12), 2010	458	2010
Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures YC Lin, RK Ghosh, R Addou, N Lu, SM Eichfeld, H Zhu, MY Li, X Peng, ... Nature Communications 6, 7311, 2015	454	2015

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