Piotr Perlin

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Coautors

Michał LeszczynskiCorreu electrònic verificat a unipress.waw.pl
Robert CzerneckiInstitue of High Pressure Physics PASCorreu electrònic verificat a unipress.waw.pl
Henryk TeisseyreInstitute of Physics of the Polish Academy of SciencesCorreu electrònic verificat a ifpan.edu.pl
Lucja MaronaCorreu electrònic verificat a unipress.waw.pl
Szymon StanczykInstitute of High Pressure Physics PASCorreu electrònic verificat a unipress.waw.pl
Michal BockowskiInstitute of High Pressure Physics PASCorreu electrònic verificat a unipress.waw.pl
Anna KafarInstitute of High Pressure Physics PASCorreu electrònic verificat a unipress.waw.pl
Marek OsinskiDistinguished Professor, University of New MexicoCorreu electrònic verificat a chtm.unm.edu
A E KellyProfessor of Optoelectronics, University of GlasgowCorreu electrònic verificat a glasgow.ac.uk
Tadeusz SuskiInstitute of High Pressure Physics UnipressCorreu electrònic verificat a unipress.waw.pl
Scott WatsonLecturer, University of GlasgowCorreu electrònic verificat a glasgow.ac.uk
Eicke R. WeberDirector, Berkeley Education Alliance for Research in Singapore BEARSCorreu electrònic verificat a berkeley.edu
Dario SchiavonPolish Academy of Sciences - UNIPRESSCorreu electrònic verificat a unipress.waw.pl
Grzegorz MuziolInstitute of High Pressure Physics PASCorreu electrònic verificat a unipress.waw.pl
Henryk TurskiInstitute of High Pressure Physics PASCorreu electrònic verificat a unipress.waw.pl
Alain PolianIMPMC, Sorbonne UniversitéCorreu electrònic verificat a impmc.upmc.fr
Julita Smalc-Koziorowska, Julita SmalcInstitute of High Pressure Physics PASCorreu electrònic verificat a unipress.waw.pl
Theodore D MoustakasBoston University, Electrical and Computer Engineering DepartmentCorreu electrònic verificat a bu.edu
Nicolas GrandjeanInstitute of Physics, EPFLCorreu electrònic verificat a epfl.ch
Z. R. WasilewskiElectrical and Computer Engineering & Waterloo Institute for Nanotechnology, University of WaterlooCorreu electrònic verificat a uwaterloo.ca

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Piotr Perlin

Institute of High Pressure Physics

Correu electrònic verificat a unipress.waw.pl - Pàgina d'inici

fizyka


Títol Ordena per cites Ordena per any Ordena per títol	Citada per Citada per	Any
Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure P Perlin, C Jauberthie-Carillon, JP Itie, A San Miguel, I Grzegory, A Polian Physical Review B 45 (1), 83, 1992	785	1992
“Blue” temperature-induced shift and band-tail emission in InGaN-based light sources PG Eliseev, P Perlin, J Lee, M Osiński Applied physics letters 71 (5), 569-571, 1997	694	1997
Towards the identification of the dominant donor in GaN P Perlin, T Suski, H Teisseyre, M Leszczynski, I Grzegory, J Jun, ... Physical review letters 75 (2), 296, 1995	424	1995
Large, nitrogen-induced increase of the electron effective mass in C Skierbiszewski, P Perlin, P Wisniewski, W Knap, T Suski, ... Applied Physics Letters 76 (17), 2409-2411, 2000	329	2000
Pressure induced deep gap state of oxygen in GaN C Wetzel, T Suski, JW Ager Iii, ER Weber, EE Haller, S Fischer, BK Meyer, ... Physical review letters 78 (20), 3923, 1997	310	1997
Thermal expansion of gallium nitride M Leszczynski, T Suski, H Teisseyre, P Perlin, I Grzegory, J Jun, ... Journal of applied physics 76 (8), 4909-4911, 1994	293	1994
Pressure studies of gallium nitride: Crystal growth and fundamental electronic properties P Perlin, I Gorczyca, NE Christensen, I Grzegory, H Teisseyre, T Suski Physical Review B 45 (23), 13307, 1992	292*	1992
Mechanism of yellow luminescence in GaN T Suski, P Perlin, H Teisseyre, M Leszczyński, I Grzegory, J Jun, ... Applied physics letters 67 (15), 2188-2190, 1995	282	1995
Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN P Perlin, J Camassel, W Knap, T Taliercio, JC Chervin, T Suski, I Grzegory, ... Applied Physics Letters 67 (17), 2524-2526, 1995	273	1995
Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer H Teisseyre, P Perlin, T Suski, I Grzegory, S Porowski, J Jun, A Pietraszko, ... Journal of Applied Physics 76 (4), 2429-2434, 1994	254	1994
Low‐temperature study of current and electroluminescence in InGaN/AlGaN/GaN double‐heterostructure blue light‐emitting diodes P Perlin, M Osiński, PG Eliseev, VA Smagley, J Mu, M Banas, P Sartori Applied physics letters 69 (12), 1680-1682, 1996	235	1996
Determination of the effective mass of GaN from infrared reflectivity and Hall effect P Perlin, E Litwin‐Staszewska, B Suchanek, W Knap, J Camassel, T Suski, ... Applied physics letters 68 (8), 1114-1116, 1996	200	1996
Raman-scattering studies of aluminum nitride at high pressure P Perlin, A Polian, T Suski Physical Review B 47 (5), 2874, 1993	186	1993
InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy P Perlin, C Kisielowski, V Iota, BA Weinstein, L Mattos, NA Shapiro, ... Applied physics letters 73 (19), 2778-2780, 1998	157	1998
Visible light communications using a directly modulated 422 nm GaN laser diode S Watson, M Tan, SP Najda, P Perlin, M Leszczynski, G Targowski, ... Optics letters 38 (19), 3792-3794, 2013	150	2013
Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate P Perlin, L Mattos, NA Shapiro, J Kruger, WS Wong, T Sands, NW Cheung, ... Journal of Applied Physics 85 (4), 2385-2389, 1999	141	1999
Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells P Perlin, V Iota, BA Weinstein, P Wiśniewski, T Suski, PG Eliseev, ... Applied physics letters 70 (22), 2993-2995, 1997	119	1997
Lattice constants, thermal expansion and compressibility of gallium nitride M Leszczynski, T Suski, P Perlin, H Teisseyre, I Grzegory, M Bockowski, ... Journal of Physics D: Applied Physics 28 (4A), A149, 1995	111	1995
Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals L Marona, P Wisniewski, P Prystawko, I Grzegory, T Suski, S Porowski, ... Applied physics letters 88 (20), 2006	105	2006
Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy C Skierbiszewski, ZR Wasilewski, M Siekacz, A Feduniewicz, P Perlin, ... Applied Physics Letters 86 (1), 2005	95	2005

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