| Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations HP Lee, J Perozek, LD Rosario, C Bayram Scientific Reports 6, 37588, 2016 | 129 | 2016 |
| Reconfigurable liquid-core/liquid-cladding optical waveguides with dielectrophoresis-driven virtual microchannels on an electromicrofluidic platform SK Fan, HP Lee, CC Chien, YW Lu, Y Chiu, FY Lin Lab on a Chip 16 (5), 847-854, 2016 | 29 | 2016 |
| Improving current ON/OFF ratio and subthreshold swing of Schottky-gate AlGaN/GaN HEMTs by postmetallization annealing HP Lee, C Bayram IEEE Transactions on Electron Devices 67 (7), 2760-2764, 2020 | 23 | 2020 |
| Systematic study of shockley-read-hall and radiative recombination in GaN on Al2O3, freestanding GaN, and GaN on Si J Meyer, R Liu, RD Schaller, HP Lee, C Bayram Journal of Physics: Photonics 2 (3), 035003, 2020 | 18 | 2020 |
| Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate J Perozek, HP Lee, B Krishnan, A Paranjpe, KB Reuter, DK Sadana, ... Journal of Physics D: Applied Physics 50 (5), 055103, 2017 | 15 | 2017 |
| Investigation of annealed, thin (∼ 2.6 nm)-Al2O3/AlGaN/GaN metal-insulator-semiconductor heterostructures on Si (111) via capacitance-voltage and current-voltage studies HP Lee, C Bayram Materials Research Express 6 (10), 105904, 2019 | 11 | 2019 |
| Investigation of annealed, thin (similar to 2.6 nm)-Al2O3/AlGaN/GaN metal-insulator-semiconductor heterostructures on Si (111) via capacitance-voltage and current-voltage studies HP Lee, C Bayram MATERIALS RESEARCH EXPRESS 6 (10), 2019 | 2 | 2019 |
| Scaling AlGaN/GaN high electron mobility transistor structures onto 200-mm silicon (111) substrates through novel buffer layer configurations HP Lee, J Perozek, C Bayram International Conference on Compound Semiconductor Manufacturing Technology …, 2017 | 2 | 2017 |
| Diamond Power Electronics: From 1kV towards 10kV Breakdown Voltage Z Han, HP Lee, B Bayram, C Bayram 2022 Compound Semiconductor Week (CSW), 1-2, 2022 | 1 | 2022 |
| Improvement in electron-beam lithography throughput by exploiting relaxed patterning fidelity requirements with directed self-assembly HY Yu, CH Liu, YT Shen, HP Lee, KY Tsai Alternative Lithographic Technologies VI 9049, 499-511, 2014 | 1 | 2014 |
| Atomic layer deposition Al2O3-passivated AlGaN/GaN high-electron-mobility transistors on Si (111) towards reliable high-speed electronics HP Lee University of Illinois at Urbana-Champaign, 2020 | | 2020 |
| Design of an electron-optical system with a ball-tip emission source through a numerical optimization method for high-throughput electron-beam–direct-write lithography HP Lee, SY Chen, CH Liu, Q Ding, YT Shen, KY Tsai Japanese Journal of Applied Physics 54 (6S1), 06FD01, 2015 | | 2015 |
| Direct-scatterometry-enabled PEC model calibration with two-dimensional layouts YY Yang, HP Lee, CH Liu, HY Yu, KY Tsai, JH Li Metrology, Inspection, and Process Control for Microlithography XXVIII 9050 …, 2014 | | 2014 |
| 多重電子束直寫微影中具球形結構場發射源之電子光學系統設計與最佳化 李宣屏 | | 2013 |
| Supplementary Online Material for:“Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer … HP Lee, J Perozek, LD Rosario, C Bayram | | |
Can BayramProfessor, University of Illinois at Urbana-Champaign, IL, USACorreu electrònic verificat a illinois.edu