Fabrication of high-density out-of-plane microneedle arrays with various heights and diverse cross-sectional shapes H Roh, YJ Yoon, JS Park, DH Kang, SM Kwak, BC Lee, M Im
Nano-Micro Letters 14, 1-19, 2022
54 2022 Fabrication and characterization of a thin-body poly-Si 1T DRAM with charge-trap effect JH Seo, YJ Yoon, E Yu, W Sun, H Shin, IM Kang, JH Lee, S Cho
IEEE Electron Device Letters 40 (4), 566-569, 2019
40 2019 Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced JH Seo, YW Jo, YJ Yoon, DH Son, CH Won, HS Jang, IM Kang, JH Lee
IEEE Electron Device Letters 37 (7), 855-858, 2016
35 2016 Suppression of current collapse in AlGaN/GaN MISHFET with carbon‐doped GaN/undoped GaN multi‐layered buffer structure HS Kang, CH Won, YJ Kim, DS Kim, YJ Yoon, IM Kang, YS Lee, JH Lee
physica status solidi (a) 212 (5), 1116-1121, 2015
34 2015 TMAH-based wet surface pre-treatment for reduction of leakage current in AlGaN/GaN MIS-HEMTs YJ Yoon, JH Seo, MS Cho, HS Kang, CH Won, IM Kang, JH Lee
Solid-State Electronics 124, 54-57, 2016
33 2016 Design and analysis of Si-based arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) JH Seo, YJ Yoon, S Lee, JH Lee, S Cho, IM Kang
Current Applied Physics 15 (3), 208-212, 2015
33 2015 Retinal degeneration reduces consistency of network-mediated responses arising in ganglion cells to electric stimulation YJ Yoon, JI Lee, YJ Jang, S An, JH Kim, SI Fried, M Im
IEEE Transactions on Neural Systems and Rehabilitation Engineering 28 (9 …, 2020
32 2020 A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance YJ Yoon, JH Seo, S Cho, JH Lee, IM Kang
Applied Physics Letters 114 (18), 2019
32 2019 Capacitorless one-transistor dynamic random access memory based on double-gate GaAs junctionless transistor YJ Yoon, JH Seo, MS Cho, BG Kim, SH Lee, IM Kang
Japanese Journal of Applied Physics 56 (6S1), 06GF01, 2017
31 2017 Design and analysis of sub-10 nm junctionless fin-shaped field-effect transistors SY Kim, JH Seo, YJ Yoon, GM Yoo, YJ Kim, HR Eun, HS Kang, J Kim, ...
JSTS: Journal of Semiconductor Technology and Science 14 (5), 508-517, 2014
26 2014 Capacitorless one-transistor dynamic random-access memory based on asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor with n-doped boosting layer … YJ Yoon, JH Seo, IM Kang
Japanese Journal of Applied Physics 57 (4S), 04FG03, 2018
20 2018 Anomalous DC characteristics of AlGaN/GaN HEMTs depending on proton irradiation energies DS Kim, JH Lee, JG Kim, YJ Yoon, JS Lee, JH Lee
ECS Journal of Solid State Science and Technology 9 (6), 065005, 2020
18 2020 Design and analysis of AlGaN/GaN MIS HEMTs with a dual-metal-gate structure YI Jang, SH Lee, JH Seo, YJ Yoon, RH Kwon, MS Cho, BG Kim, GM Yoo, ...
JSTS: Journal of Semiconductor Technology and Science 17 (2), 223-229, 2017
18 2017 Fabrication of AlGaN/GaN MISHEMT with dual-metal gate electrode and its performances JH Jung, MS Cho, WD Jang, SH Lee, J Jang, JH Bae, YJ Yoon, IM Kang
Applied Physics A 126, 1-7, 2020
17 2020 Universal dry synthesis and patterning of high-quality and-purity graphene quantum dots by ion-beam assisted chemical vapor deposition JM Ha, NE Lee, YJ Yoon, SH Lee, YS Hwang, JK Suk, CY Lee, CR Kim, ...
Carbon 186, 28-35, 2022
16 2022 One-transistor dynamic random-access memory based on gate-all-around junction-less field-effect transistor with a Si/SiGe heterostructure YJ Yoon, JS Lee, DS Kim, SH Lee, IM Kang
Electronics 9 (12), 2134, 2020
16 2020 GaN junctionless trigate field-effect transistor with deep-submicron gate length: Characterization and modeling in RF regime KS Im, JH Seo, YJ Yoon, YI Jang, JS Kim, S Cho, JH Lee, S Cristoloveanu, ...
Japanese Journal of Applied Physics 53 (11), 118001, 2014
16 2014 Polycrystalline-silicon-MOSFET-based capacitorless DRAM with grain boundaries and its performances SH Lee, WD Jang, YJ Yoon, JH Seo, HJ Mun, MS Cho, J Jang, JH Bae, ...
IEEE Access 9, 50281-50290, 2021
15 2021 Deep sub-60 mV/decade subthreshold swing in AlGaN/GaN FinMISHFETs with M-plane sidewall channel Q Dai, DH Son, YJ Yoon, JG Kim, X Jin, IM Kang, DH Kim, Y Xu, ...
IEEE Transactions on Electron Devices 66 (4), 1699-1703, 2019
15 2019 Design and optimization of germanium-based gate-metal-core vertical nanowire tunnel FET WD Jang, YJ Yoon, MS Cho, JH Jung, SH Lee, J Jang, JH Bae, IM Kang
Micromachines 10 (11), 749, 2019
14 2019 