Preparation of (In, Mn) As/(Ga, Al) Sb magnetic semiconductor heterostructures and their ferromagnetic characteristics H Munekata, A Zaslavsky, P Fumagalli, RJ Gambino
Applied physics letters 63 (21), 2929-2931, 1993
247 1993 Future Trends in Microelectronics: Frontiers and Innovations S Luryi, J Xu, A Zaslavsky
John Wiley & Sons, 2013
203 * 2013 Noise characteristics of double-barrier resonant-tunneling structures below 10 kHz YP Li, A Zaslavsky, DC Tsui, M Santos, M Shayegan
Physical Review B 41 (12), 8388, 1990
203 1990 Lateral interband tunneling transistor in silicon-on-insulator C Aydin, A Zaslavsky, S Luryi, S Cristoloveanu, D Mariolle, D Fraboulet, ...
Applied Physics Letters 84 (10), 1780-1782, 2004
186 2004 Resonant tunneling and intrinsic bistability in asymmetric double-barrier heterostructures A Zaslavsky, VJ Goldman, DC Tsui, JE Cunningham
Applied physics letters 53 (15), 1408-1410, 1988
167 1988 A compact capacitor-less high-speed DRAM using field effect-controlled charge regeneration J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
IEEE Electron Device Letters 33 (2), 179-181, 2011
164 2011 A review of sharp-switching devices for ultra-low power applications S Cristoloveanu, J Wan, A Zaslavsky
IEEE Journal of the Electron Devices Society 4 (5), 215-226, 2016
149 2016 Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Solid-State Electronics 65, 226-233, 2011
144 2011 Designing logic circuits for probabilistic computation in the presence of noise K Nepal, RI Bahar, J Mundy, WR Patterson, A Zaslavsky
Proceedings of the 42nd Annual Design Automation Conference, 485-490, 2005
111 2005 A tunneling field effect transistor model combining interband tunneling with channel transport J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Journal of Applied Physics 110 (10), 2011
104 2011 Photonic band gap quantum well and quantum box structures: A high‐Q resonant cavity SY Lin, VM Hietala, SK Lyo, A Zaslavsky
Applied Physics Letters 68 (23), 3233-3235, 1996
101 1996 Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator D Kazazis, P Jannaty, A Zaslavsky, C Le Royer, C Tabone, L Clavelier, ...
Applied Physics Letters 94 (26), 2009
100 2009 Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires HT Johnson, LB Freund, CD Akyüz, A Zaslavsky
Journal of applied physics 84 (7), 3714-3725, 1998
95 1998 Reduction of reflection losses in C Aydin, A Zaslavsky, GJ Sonek, J Goldstein
Applied Physics Letters 80 (13), 2242-2244, 2002
88 2002 A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection J Wan, S Cristoloveanu, C Le Royer, A Zaslavsky
Solid-State Electronics 76, 109-111, 2012
85 2012 A systematic study of the sharp-switching Z2-FET device: From mechanism to modeling and compact memory applications J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Solid-State Electronics 90, 2-11, 2013
79 2013 Progress in Z2-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Solid-State Electronics 84, 147-154, 2013
78 2013 Future trends in microelectronics: the nano millennium S Luryi, J Xu, A Zaslavsky
IEEE, 2002
75 * 2002 High-efficiency silicon-compatible photodetectors based on Ge quantum dots S Cosentino, P Liu, ST Le, S Lee, D Paine, A Zaslavsky, D Pacifici, ...
Applied Physics Letters 98 (22), 2011
74 2011 Solid-State Electron. S Lee, Y Song, H Park, A Zaslavsky, D Paine
Lett 135, 94-99, 2017
69 2017 