| Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers L Goux, JG Lisoni, M Jurczak, DJ Wouters, L Courtade, C Muller Journal of Applied Physics 107 (2), 2010 | 236 | 2010 |
| Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories M Bocquet, D Deleruyelle, H Aziza, C Muller, JM Portal, T Cabout, ... IEEE Transactions on Electron Devices 61 (3), 674-681, 2014 | 145 | 2014 |
| Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories W Zhao, M Moreau, E Deng, Y Zhang, JM Portal, JO Klein, M Bocquet, ... IEEE Transactions on Circuits and Systems I: Regular Papers 61 (2), 443-454, 2014 | 125 | 2014 |
| Experimental and theoretical study of electrode effects in HfO2 based RRAM C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ... Electron Devices Meeting (IEDM), 2011 IEEE International, 28.7. 1-28.7. 4, 2011 | 111 | 2011 |
| Sr-doped PbZr1− xTixO3 ceramic: structural study and field-induced reorientation of ferroelectric domains C Bedoya, C Muller, JL Baudour, V Madigou, M Anne, M Roubin Materials Science and Engineering: B 75 (1), 43-52, 2000 | 96 | 2000 |
| Neutron diffraction study of the relaxor-ferroelectric phase transition in disordered Pb(Sc1/2Nb1/2)O3 C Perrin, N Menguy, E Suard, C Muller, C Caranoni, A Stepanov Journal of Physics: Condensed Matter 12 (33), 7523, 2000 | 80 | 2000 |
| BICOVOX family of oxide anion conductors: chemical, electrical and structural studies S Lazure, RN Vannier, G Nowogrocki, G Mairesse, C Muller, M Anne, ... Journal of Materials Chemistry 5 (9), 1395-1403, 1995 | 78 | 1995 |
| Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories M Bocquet, D Deleruyelle, C Muller, JM Portal Applied Physics Letters 98 (26), 2011 | 76 | 2011 |
| Accurate analysis of parasitic current overshoot during forming operation in RRAMs S Tirano, L Perniola, J Buckley, J Cluzel, V Jousseaume, C Muller, ... Microelectronic engineering 88 (7), 1129-1132, 2011 | 57 | 2011 |
| Oxidation kinetics of Ni metallic films: formation of NiO-based resistive switching structures L Courtade, C Turquat, C Muller, JG Lisoni, L Goux, DJ Wouters, ... Thin solid films 516 (12), 4083-4092, 2008 | 57 | 2008 |
| Compact modeling solutions for oxide-based resistive switching memories (OxRAM) M Bocquet, H Aziza, W Zhao, Y Zhang, S Onkaraiah, C Muller, M Reyboz, ... Journal of Low Power Electronics and Applications 4 (1), 1-14, 2014 | 51 | 2014 |
| Switching of nanosized filaments in NiO by conductive atomic force microscopy F Nardi, D Deleruyelle, S Spiga, C Muller, B Bouteille, D Ielmini Journal of Applied Physics 112 (6), 2012 | 50 | 2012 |
| A highly reliable 3-D integrated SBT ferroelectric capacitor enabling FeRAM scaling L Goux, G Russo, N Menou, JG Lisoni, M Schwitters, V Paraschiv, D Maes, ... IEEE transactions on electron devices 52 (4), 447-453, 2005 | 48 | 2005 |
| Bipolar ReRAM based non-volatile flip-flops for low-power architectures S Onkaraiah, M Reyboz, F Clermidy, JM Portal, M Bocquet, C Muller, ... 10th IEEE International NEWCAS Conference, 417-420, 2012 | 47 | 2012 |
| Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory T Cabout, J Buckley, C Cagli, V Jousseaume, JF Nodin, B de Salvo, ... Thin Solid Films 533, 19-23, 2012 | 45 | 2012 |
| Ge-doped GaSb thin films with zero mass density change upon crystallization for applications in phase change memories M Putero, MV Coulet, C Muller, C Baehtz, S Raoux, HY Cheng Applied Physics Letters 108 (10), 2016 | 44 | 2016 |
| Polarization fatigue in PbZr0. 45Ti0. 55O3-based capacitors studied from high resolution synchrotron x-ray diffraction N Menou, C Muller, IS Baturin, VY Shur, JL Hodeau Journal of applied physics 97 (6), 2005 | 44 | 2005 |
| Structural Disorder and Ionic Conductivity in LiVO3: A Neutron Powder Diffraction Study from 340 to 890 K C Muller, JC Valmalette, JL Soubeyroux, F Bouree, JR Gavarri Journal of Solid State Chemistry 156 (2), 379-389, 2001 | 37 | 2001 |
| Method for manufacturing a memory element comprising a resistivity-switching NiO layer and devices obtained thereof L Courtade, JL Reyes, L Goux, C Turquat, C Muller, D Wouters US Patent 7,960,775, 2011 | 35 | 2011 |
| Magnetic-field-induced orientation in Co-doped SrBi2Ta2O9 ferroelectricoxide C Bedoya, C Muller, F Jacob, Y Gagou, MA Fremy, E Elkaim Journal of Physics: Condensed Matter 14 (45), 11849, 2002 | 35 | 2002 |
Damien DeleruyelleInstitut des Nanotechnologies de Lyon (INL)بريد إلكتروني تم التحقق منه على insa-lyon.fr
