A new spin on magnetic memories AD Kent, DC Worledge
Nature nanotechnology 10 (3), 187-191, 2015
952 2015 Spin torque switching of perpendicular Ta∣ CoFeB∣ MgO-based magnetic tunnel junctions DC Worledge, G Hu, DW Abraham, JZ Sun, PL Trouilloud, J Nowak, ...
Applied physics letters 98 (2), 2011
854 2011 Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy M Gajek, JJ Nowak, JZ Sun, PL Trouilloud, EJ O’Sullivan, DW Abraham, ...
Applied Physics Letters 100 (13), 2012
367 2012 Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling DC Worledge, PL Trouilloud
Applied Physics Letters 83 (1), 84-86, 2003
307 2003 Anneal‐tunable Curie temperature and transport of La0.67 Ca0.33 MnO3 DC Worledge, GJ Snyder, MR Beasley, TH Geballe, R Hiskes, S DiCarolis
Journal of applied physics 80 (9), 5158-5161, 1996
215 1996 Effect of subvolume excitation and spin-torque efficiency on magnetic switching JZ Sun, RP Robertazzi, J Nowak, PL Trouilloud, G Hu, DW Abraham, ...
Physical Review B—Condensed Matter and Materials Physics 84 (6), 064413, 2011
208 2011 Dependence of voltage and size on write error rates in spin-transfer torque magnetic random-access memory JJ Nowak, RP Robertazzi, JZ Sun, G Hu, JH Park, JH Lee, AJ Annunziata, ...
IEEE Magnetics Letters 7, 1-4, 2016
175 2016 Negative Spin-Polarization of DC Worledge, TH Geballe
Physical review letters 85 (24), 5182, 2000
167 2000 A study of write margin of spin torque transfer magnetic random access memory technology T Min, Q Chen, R Beach, G Jan, C Horng, W Kula, T Torng, R Tong, ...
IEEE Transactions on Magnetics 46 (6), 2322-2327, 2010
165 2010 Spin flop switching for magnetic random access memory DC Worledge
Applied Physics Letters 84 (22), 4559-4561, 2004
162 2004 Single-domain model for toggle MRAM DC Worledge
IBM journal of research and development 50 (1), 69-79, 2006
125 2006 Spin-torque switching efficiency in CoFeB-MgO based tunnel junctions JZ Sun, SL Brown, W Chen, EA Delenia, MC Gaidis, J Harms, G Hu, ...
Physical Review B—Condensed Matter and Materials Physics 88 (10), 104426, 2013
123 2013 Impact of Ta diffusion on the perpendicular magnetic anisotropy of Ta/CoFeB/MgO N Miyakawa, DC Worledge, K Kita
IEEE Magnetics Letters 4, 1000104-1000104, 2013
120 2013 On-site Coulomb repulsion in the small polaron system DC Worledge, L Miéville, TH Geballe
Physical Review B 57 (24), 15267, 1998
116 1998 Spin-polarized tunneling in DC Worledge, TH Geballe
Applied Physics Letters 76 (7), 900-902, 2000
114 2000 Easy axis magnetic amplifier DC Worledge
US Patent 6,987,691, 2006
112 2006 Magnetic phase diagram of two identical coupled nanomagnets DC Worledge
Applied physics letters 84 (15), 2847-2849, 2004
111 2004 Electric-field-control of magnetic anisotropy of Co0. 6Fe0. 2B0. 2/oxide stacks using reduced voltage K Kita, DW Abraham, MJ Gajek, DC Worledge
Journal of Applied Physics 112 (3), 2012
109 2012 Demonstration of ultralow bit error rates for spin-torque magnetic random-access memory with perpendicular magnetic anisotropy JJ Nowak, RP Robertazzi, JZ Sun, G Hu, DW Abraham, PL Trouilloud, ...
IEEE Magnetics Letters 2, 3000204-3000204, 2011
107 2011 STT-MRAM with double magnetic tunnel junctions G Hu, JH Lee, JJ Nowak, JZ Sun, J Harms, A Annunziata, S Brown, ...
2015 IEEE International Electron Devices Meeting (IEDM), 26.3. 1-26.3. 4, 2015
96 2015 