Elastomeric transistor stamps: reversible probing of charge transport in organic crystals VC Sundar, J Zaumseil, V Podzorov, E Menard, RL Willett, T Someya, ...
Science 303 (5664), 1644-1646, 2004
1961 2004 Intrinsic charge transport on the surface of organic semiconductors V Podzorov, E Menard, A Borissov, V Kiryukhin, JA Rogers, ...
Physical review letters 93 (8), 086602, 2004
1414 2004 Organic single‐crystal field‐effect transistors RWI De Boer, ME Gershenson, AF Morpurgo, V Podzorov
physica status solidi (a) 201 (6), 1302-1331, 2004
715 2004 High-mobility field-effect transistors based on transition metal dichalcogenides V Podzorov, ME Gershenson, C Kloc, R Zeis, E Bucher
Applied Physics Letters 84 (17), 3301-3303, 2004
709 2004 Colloquium : Electronic transport in single-crystal organic transistorsME Gershenson, V Podzorov, AF Morpurgo
Reviews of modern physics 78 (3), 973-989, 2006
685 2006 Electrostatic modification of novel materials CH Ahn, A Bhattacharya, M Di Ventra, JN Eckstein, CD Frisbie, ...
Reviews of Modern Physics 78 (4), 1185-1212, 2006
627 2006 Field effect transistors on rubrene single crystals with parylene gate insulator V Podzorov, VM Pudalov, ME Gershenson
arXiv preprint cond-mat/0210555, 2002
598 2002 Single-crystal organic field effect transistors with the hole mobility V Podzorov, SE Sysoev, E Loginova, VM Pudalov, ME Gershenson
Applied Physics Letters 83 (17), 3504-3506, 2003
551 2003 High‐performance n‐and p‐type single‐crystal organic transistors with free‐space gate dielectrics E Menard, V Podzorov, SH Hur, A Gaur, ME Gershenson, JA Rogers
Advanced materials 16 (23‐24), 2097-2101, 2004
545 2004 Hall effect in the accumulation layers on the surface of organic semiconductors V Podzorov, E Menard, JA Rogers, ME Gershenson
Physical review letters 95 (22), 226601, 2005
514 2005 Soviet Scientific Review vol 9, ed IM Khalatnikov (London: Harwood) pp 223-354 Google Scholar Lee PA and Ramakrishnan TV 1985 BL Altshuler, AG Aronov, ME Gershenson, V Sharvin Yu
Rev. Mod. Phys 57, 287-337, 1987
342 1987 Low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers VM Pudalov, ME Gershenson, H Kojima, N Butch, EM Dizhur, ...
Physical review letters 88 (19), 196404, 2002
305 2002 Interaction effects and phase relaxation in disorderedsystems IL Aleiner, BL Altshuler, ME Gershenson
Waves in Random Media 9 (2), 201, 1999
280 1999 Ultrasensitive hot-electron nanobolometers for terahertz astrophysics J Wei, D Olaya, BS Karasik, SV Pereverzev, AV Sergeev, ME Gershenson
Nature nanotechnology 3 (8), 496-500, 2008
258 2008 Superconducting nanocircuits for topologically protected qubits S Gladchenko, D Olaya, E Dupont-Ferrier, B Douçot, LB Ioffe, ...
Nature Physics 5 (1), 48-53, 2009
257 2009 Electronic functionalization of the surface of organic semiconductors with self-assembled monolayers MF Calhoun, J Sanchez, D Olaya, ME Gershenson, V Podzorov
Nature materials 7 (1), 84-89, 2008
244 2008 Martensitic accommodation strain and the metal-insulator transition in manganites V Podzorov, BG Kim, V Kiryukhin, ME Gershenson, SW Cheong
Physical Review B 64 (14), 140406, 2001
242 2001 Electron-phonon interaction in ultrathin Nb films EM Gershenzon, ME Gershenzon, GN Gol’tsman, AM Lyul’kin, ...
Sov. Phys. JETP 70 (3), 505-511, 1990
185 1990 Light Quasiparticles Dominate Electronic Transport<? format?> in Molecular Crystal Field-Effect Transistors ZQ Li, V Podzorov, N Sai, MC Martin, ME Gershenson, M Di Ventra, ...
Physical Review Letters 99 (1), 016403, 2007
184 2007 Quantum effects in disordered metal films BL Altshuler, AG Aronov, ME Gershenson, YV Sharvin
Sov. Sci. Rev. A Phys 9, 223-354, 1987
181 1987 